Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates

2016 ◽  
Vol 16 (5) ◽  
pp. 5239-5242 ◽  
Author(s):  
Bugeun Ki ◽  
Kyung Ho Kim ◽  
Hyungjun Kim ◽  
Chulwon Lee ◽  
Yong-Hoon Cho ◽  
...  
Keyword(s):  
Tensile Strain ◽  
Evaporation Process ◽  
Thermally Induced ◽  
Si Substrates

Role of grain boundaries in the epitaxial realignment of undoped and As-doped polycrystalline silicon films

1993 ◽  
Vol 8 (10) ◽  
pp. 2608-2612 ◽  
Author(s):  
C. Spinella ◽  
F. Benyaïch ◽  
A. Cacciato ◽  
E. Rimini ◽  
G. Fallico ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Grain Structure ◽  
Native Oxide ◽  
Thermally Induced ◽  
Si Substrates ◽  
As Doping ◽  
Fine Grain ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
Reduced Density

The early stages of the thermally induced epitaxial realignment of undoped and As-doped polycrystalline Si films deposited onto crystalline Si substrates were monitored by transmission electron microscopy. Under the effect of the heat treatment, the native oxide film at the poly-Si/c-Si interface begins to agglomerate into spherical beads. The grain boundary terminations at the interface are the preferred sites for the triggering of the realignment transformation which starts by the formation of epitaxial protuberances at these sites. This feature, in conjunction with the microstructure of the films during the first instants of the heat treatment, explains the occurrence of two different realignment modes. In undoped films the epitaxial protuberances, due to the fine grain structure, are closely distributed and grow together forming a rough interface moving toward the film's surface. For As-doped films, the larger grain size leaves a reduced density of realignment sites. Due to As doping some of these sites grow fast and form epitaxial columns that further grow laterally at the expense of the surrounding polycrystalline grains.

Catalytic Growth of Semiconducting ZnO Nanowires by Reactive Evaporation Process

2003 ◽  
Vol 776 ◽  
Author(s):  
Joodong Park ◽  
Han-Ho Choi ◽  
Rajiv K. Singh
Keyword(s):  
Size Control ◽  
Volume Ratio ◽  
Green Emission ◽  
Zno Nanowires ◽  
Processing Temperature ◽  
Evaporation Process ◽  
Au Catalyst ◽  
Si Substrates ◽  
Reactive Evaporation ◽  
Catalyst Film

AbstractReactive evaporation process was introduced as a simple technique for the fabrication of aligned ZnO nanowires on a Si (100) surface. Single crystalline ZnO nanowire arrays were successfully synthesized on Au coated Si substrates via a VLS growth mechanism. The diameter of ZnO nanowires were observed to vary from 40 nm to 150 nm and the ratio of length to diameter was observed to be larger than 30. The diameter of ZnO nanowires was controlled by changing the processing temperature and by the thickness of Au catalyst film. Green emission induced from singly ionized oxygen vacancies was generated from ZnO nanowires with the excitonic emission in UV range. Higher intensity of the green emission was observed in thinner nanowires, which is attributed to their higher surface-to-volume ratio. Aligned structure formation and size control of ZnO nanowires could provide the potential for various nano-scale device applications.

Near-infrared Ge Photodetectors Fabricated on Si Substrates with CMOS Technology

2003 ◽  
Vol 770 ◽  
Author(s):  
Douglas D. Cannon ◽  
Samerkhae Jongthammanurak ◽  
Jifeng Liu ◽  
David T. Danielson ◽  
Kazumi Wada ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Growth Temperature ◽  
Tensile Strain ◽  
Near Infrared ◽  
Transition Energy ◽  
Cmos Technology ◽  
Cmos Process ◽  
Thermal Expansion Mismatch ◽  
Direct Transition ◽  
Si Substrates

AbstractWe have fabricated the first CMOS process compatible high-responsivity Ge p-i-n diodes for 1.55 μm wavelengths. The thermal expansion mismatch between Ge epilayers and Si substrates was used to engineer tensile strain upon cooling from the growth temperature. This 0.2% tensile strain results in a lowering of the direct transition energy in Ge by 30 meV and extends the responsivity curve to near 1.6μm.

X-ray diffraction analysis of thermally-induced stress relaxation in ZnO films deposited by magnetron sputtering on (100) Si substrates

2010 ◽  
Vol 518 (18) ◽  
pp. 5237-5241 ◽  
Author(s):  
F. Conchon ◽  
P.O. Renault ◽  
P. Goudeau ◽  
E. Le Bourhis ◽  
E. Sondergard ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Magnetron Sputtering ◽  
Diffraction Analysis ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thermally Induced ◽  
X Ray ◽  
Si Substrates ◽  
Induced Stress

Strained Ge and Ge1-xSnx Technology for Future CMOS Devices

2011 ◽  
Vol 470 ◽  
pp. 146-151 ◽  
Author(s):  
Osamu Nakatsuka ◽  
Shotaro Takeuchi ◽  
Yosuke Shimura ◽  
Akira Sakai ◽  
Shigeaki Zaima
Keyword(s):  
Electrical Properties ◽  
Buffer Layer ◽  
Tensile Strain ◽  
Cmos Technology ◽  
Crystalline Structures ◽  
Si Substrates ◽  
Heteroepitaxial Layers

We have investigated the growth and crystalline structures of Ge1-xSnx buffer and tensile-strained Ge layers for future use in CMOS technology. We have demonstrated that strain relaxed Ge1-xSnx layers with an Sn content of 12.3% and 9.2% can be grown on Ge and Si substrates, respectively. We achieved a tensile-strain value of 0.71 % in Ge layers on a Ge0.932Sn0.068 buffer layer. We have also investigated the effects of Sn incorporation into Ge on the electrical properties of Ge1-xSnx heteroepitaxial layers.

Tensile strain engineering of Si thin films using porous Si substrates

2010 ◽  
Vol 518 (9) ◽  
pp. 2466-2469 ◽  
Author(s):  
A. Boucherif ◽  
N.P. Blanchard ◽  
P. Regreny ◽  
O. Marty ◽  
G. Guillot ◽  
...  
Keyword(s):  
Thin Films ◽  
Tensile Strain ◽  
Strain Engineering ◽  
Porous Si ◽  
Si Substrates

Optical Properties of Strained Polycrystalline CuInS2 Layers

2007 ◽  
Vol 1012 ◽  
Author(s):  
Jens Eberhardt ◽  
Heinrich Metzner ◽  
Rüdiger Goldhahn ◽  
Florian Hudert ◽  
Kristian Schulz ◽  
...  
Keyword(s):  
Optical Properties ◽  
Buffer Layer ◽  
Tensile Strain ◽  
Transition Energy ◽  
Molecular Beams ◽  
Oscillator Strengths ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Yield Information

AbstractUsing molecular beams, polycrystalline thin CuInS2 (CIS) films of different thicknesses were grown on Si substrates covered with a sputtered Mo-buffer layer. Systematic photoluminescence and photoreflectance measurements were performed to investigate the influence of strain - introduced during growth - on the optical properties. The transition energy of the free A-exciton (FXA) decreases with increasing tensile strain caused by (i) increasing thickness of the Mo buffer layer and (ii) decreasing thickness of the CIS layer. Furthermore, the energetic splittings between FXA, FXB, and FXC increase with increasing tensile strain. When combined with X-ray diffraction data, the oscillator strengths of the excitonic transitions yield information on the strain distribution within the films.

A New Approach to Grow Strain-Free GaAs on Si

1990 ◽  
Vol 202 ◽  
Author(s):  
Hyunchul Sohn ◽  
Eicke R. Weber ◽  
Jay Tu ◽  
Shyh Wang
Keyword(s):  
Residual Strain ◽  
Lattice Mismatch ◽  
Gaas Layer ◽  
Threading Dislocations ◽  
New Approach ◽  
Thermally Induced ◽  
Si Substrates ◽  
Growth Area ◽  
The Difference ◽  
Substrate Patterning

ABSTRACTThe major problems of the GaAs/Si heteroepitaxy are the high density of threading dislocations and the high residual strain in the GaAs epilayers. The residual strain in the epilayer is attributed to the difference in contraction during cooling down from the growth temperature. It was reported previously that the residual stress in GaAs epilayer could be reduced by reducing the growth area using substrate patterning. In this paper, we report a new approach to grow strain- free GaAs layer on Si substrates. The residual strain in GaAs/Si is tensile in nature, therefore we attempted to compensate this thermally induced strain by compressive lattice mismatched strain. The thermally induced strain in the GaAs layer was successfully compensated by the lattice- mismatch induced strain using In0.032Ga0.968As. By that method, we could grow thin strain- free GaAs layers on Si without patterning. The strain relieving effect was confirmed by photoluminescence experiment.

Sign in / Sign up

Export Citation Format

Share Document