Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer

2016 ◽  
Vol 16 (3) ◽  
pp. 2752-2755 ◽  
Author(s):  
Soon-Won Jung ◽  
Jeong-Seon Choi ◽  
Jung Ho Park ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Polydimethylsiloxane Elastomer

Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures

2015 ◽  
Vol 15 (10) ◽  
pp. 7526-7530 ◽  
Author(s):  
Soon-Won Jung ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
Bock Soon Na ◽  
Ji-Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Channel Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Poly Vinylidene Fluoride

In this study, stretchable organic–inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioff ratio, and subthreshold swing (SS) values of 6.1 cm2 V−1 s−1, 107, and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.

High‐Performance Organic‐Inorganic Hybrid Thin‐Film Transistors with Interesting Synaptic Behaviors

2019 ◽  
Vol 216 (18) ◽  
pp. 1900344 ◽  
Author(s):  
Huichao Zhu ◽  
Hongjian Mu ◽  
Zhaoyun Cai ◽  
Xuefeng Chu ◽  
Xiaotian Yang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid

Properties of organic-inorganic hybrid thin film transistors with ZnO active layer on PES substrates

2009 ◽  
Author(s):  
Su Cheol Gong ◽  
Byung Chul Yoo ◽  
Ik Sub Shin ◽  
Hyungtag Jeon ◽  
Hyung-Ho Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid

Organic-inorganic hybrid thin film light-emitting devices: interfacial engineering and device physics

2021 ◽  
Author(s):  
Chunxiu Zang ◽  
Mengxin Xu ◽  
Letian Zhang ◽  
Shihao Liu ◽  
Wenfa Xie
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Sandwich Structure ◽  
Device Physics ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Interfacial Engineering ◽  
Organic Light

Thin film light-emitting devices (LEDs) with sandwich structure, such as organic light emitting devices (OLEDs), quantum dots LEDs (QLEDs) and perovskite LEDs (PeLEDs), have attracted wide attentions because of their...

Towards solution-processed ambipolar hybrid thin-film transistors based on ZnO nanoparticles and P3HT polymer

2013 ◽  
Vol 58 ◽  
pp. 144-153 ◽  
Author(s):  
Abdou Karim Diallo ◽  
Meriem Gaceur ◽  
Nicolas Berton ◽  
Olivier Margeat ◽  
Jörg Ackermann ◽  
...  
Keyword(s):  
Thin Film ◽  
Zno Nanoparticles ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Hybrid Thin Film
Sign in / Sign up

Export Citation Format

Share Document