Low-Power-Consumption Metal Oxide NO2 Gas Sensor Based on Micro-Heater and Screen Printing Technology

2012 ◽  
Vol 12 (7) ◽  
pp. 5543-5546 ◽  
Author(s):  
S. E. Moon ◽  
H.-K. Lee ◽  
N.-J. Choi ◽  
J. Lee ◽  
W. S. Yang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Power Consumption ◽  
Low Power ◽  
Gas Sensor ◽  
Screen Printing ◽  
Low Power Consumption ◽  
Printing Technology ◽  
No2 Gas Sensor ◽  
Screen Printing Technology

Low power consumption micro C2H5OH gas sensor based on micro-heater and screen printing technique

2013 ◽  
Vol 187 ◽  
pp. 598-603 ◽  
Author(s):  
S.E. Moon ◽  
H.-K. Lee ◽  
N.-J. Choi ◽  
J. Lee ◽  
C.A. Choi ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Gas Sensor ◽  
Screen Printing ◽  
Low Power Consumption ◽  
Screen Printing Technique ◽  
Printing Technique

scholarly journals Highly selective and ultra-low power consumption metal oxide based hydrogen gas sensor employing graphene oxide as molecular sieve

2020 ◽  
Vol 320 ◽  
pp. 128363 ◽  
Author(s):  
Florian Rasch ◽  
Vasile Postica ◽  
Fabian Schütt ◽  
Yogendra Kumar Mishra ◽  
Ali Shaygan Nia ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Metal Oxide ◽  
Power Consumption ◽  
Low Power ◽  
Gas Sensor ◽  
Molecular Sieve ◽  
Hydrogen Gas ◽  
Low Power Consumption ◽  
Ultra Low Power

scholarly journals Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices

Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 374 ◽  
Author(s):  
Ayoub Lahlalia ◽  
Olivier Le Neel ◽  
Ravi Shankar ◽  
Siegfried Selberherr ◽  
Lado Filipovic
Keyword(s):  
Metal Oxide ◽  
Power Consumption ◽  
Low Power ◽  
Gas Sensor ◽  
High Sensitivity ◽  
Fast Response ◽  
Low Power Consumption ◽  
Response Characteristics ◽  
The Impact ◽  
Semiconducting Metal Oxide

Semiconducting metal oxide (SMO) gas sensors were designed, fabricated, and characterized in terms of their sensing capability and the thermo-mechanical behavior of the micro-hotplate. The sensors demonstrate high sensitivity at low concentrations of volatile organic compounds (VOCs) at a low power consumption of 10.5 mW. In addition, the sensors realize fast response and recovery times of 20 s and 2.3 min, respectively. To further improve the baseline stability and sensing response characteristics at low power consumption, a novel sensor is conceived of and proposed. Tantalum aluminum (TaAl) is used as a microheater, whereas Pt-doped SnO2 is used as a thin film sensing layer. Both layers were deposited on top of a porous silicon nitride membrane. In this paper, two designs are characterized by simulations and experimental measurements, and the results are comparatively reported. Simultaneously, the impact of a heat pulsing mode and rubber smartphone cases on the sensing performance of the gas sensor are highlighted.

scholarly journals Fabrication and Characteristics of Micro Platform for Micro Gas Sensor with Low Power Consumption

2011 ◽  
Vol 20 (5) ◽  
pp. 317-321 ◽  
Author(s):  
Woong-Jin Jang ◽  
Kwang-Bum Park ◽  
In-Ho Kim ◽  
Soon-Sup Park ◽  
Hyo-Derk Park ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Gas Sensor ◽  
Low Power Consumption ◽  
Micro Gas Sensor

Low power consumption and fast response H2S gas sensor based on a chitosan-CuO hybrid nanocomposite thin film

2020 ◽  
Vol 236 ◽  
pp. 116064 ◽  
Author(s):  
Fajr I.M. Ali ◽  
Saleh T. Mahmoud ◽  
Falah Awwad ◽  
Yaser E. Greish ◽  
Ayah F.S. Abu-Hani
Keyword(s):  
Thin Film ◽  
Power Consumption ◽  
Low Power ◽  
Gas Sensor ◽  
Fast Response ◽  
Low Power Consumption ◽  
Hybrid Nanocomposite ◽  
Nanocomposite Thin Film ◽  
H2s Gas Sensor

Flexible low-power source-gated transistors with solution-processed metal–oxide semiconductors

Nanoscale ◽  
2020 ◽  
Vol 12 (42) ◽  
pp. 21610-21616
Author(s):  
Dingwei Li ◽  
Momo Zhao ◽  
Kun Liang ◽  
Huihui Ren ◽  
Quantan Wu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Power Consumption ◽  
Low Power ◽  
High Gain ◽  
Power Source ◽  
Metal Oxide Semiconductors ◽  
Low Power Consumption ◽  
Light Weight ◽  
Solution Processed ◽  
Oxide Semiconductors

Flexible light weight In2O3-based source-gated transistors are achieved with high gain, fast saturation and low power consumption.

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