In/Ga Inter-Diffusion in InAs Quantum Dot in InGaAs/GaAs Asymmetric Quantum Well

2012 ◽  
Vol 12 (7) ◽  
pp. 5774-5777 ◽  
Author(s):  
M.H. Abdellatif ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Nam Ki Cho
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Asymmetric Quantum ◽  
Inas Quantum Dot

Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques

2015 ◽  
Vol 54 (9) ◽  
pp. 091201 ◽  
Author(s):  
Hung-Pin Hsu ◽  
Jiun-De Wu ◽  
Yan-Jih Lin ◽  
Ying-Sheng Huang ◽  
You-Ru Lin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Type Ii ◽  
Inas Quantum Dot

scholarly journals Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance

2021 ◽  
Vol 8 ◽  
Author(s):  
Jia-Jian Chen ◽  
Zi-Hao Wang ◽  
Wen-Qi Wei ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Well Lasers ◽  
Laser Source ◽  
Quantum Dot Lasers ◽  
Optical Isolator ◽  
Quantum Dot Laser ◽  
On Chip ◽  
Inas Quantum Dot

A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.

In As/GaAs quantum dot lasers with dots in an asymmetric quantum well structure

2006 ◽  
Vol 376-377 ◽  
pp. 886-889 ◽  
Author(s):  
W.J. Choi ◽  
J.D. Song ◽  
J.I. Lee ◽  
K.C. Kim ◽  
T.G. Kim
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Dot Lasers ◽  
Quantum Well Structure ◽  
Asymmetric Quantum ◽  
Gaas Quantum Dot

Coupled-stripe quantum-well-assisted AlGaAs–GaAs–InGaAs–InAs quantum-dot laser

2002 ◽  
Vol 80 (17) ◽  
pp. 3045-3047 ◽  
Author(s):  
G. Walter ◽  
T. Chung ◽  
N. Holonyak
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Dot Laser ◽  
Inas Quantum Dot

scholarly journals Ferromagnetism and magnetotransport in GaAs structures with InAs quantum dot layer or InxGa1-xAs quantum well delta-doped with Mn and C

2008 ◽  
Vol 100 (4) ◽  
pp. 042025 ◽  
Author(s):  
V A Kulbachinskii ◽  
P V Gurin ◽  
Ov Vikhrova ◽  
Y A Danilov ◽  
B N Zvonkov
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Inas Quantum Dot
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