Phenomenological Analysis of Random Telegraph Noise in Amorphous TiOx -Based Bipolar Resistive Switching Random Access Memory Devices

2012 ◽  
Vol 12 (7) ◽  
pp. 5392-5396 ◽  
Author(s):  
Jung-Kyu Lee ◽  
Ju-Wan Lee ◽  
Jong-Ho Bae ◽  
Jinwon Park ◽  
Sung-Woong Chung ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Phenomenological Analysis ◽  
Memory Devices ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Sol-Gel Processed ZrO2 Based Forming-Free Resistive Switching Memory Devices

2022 ◽  
Vol 1048 ◽  
pp. 198-202
Author(s):  
K.M. Shafi ◽  
K. Muhammed Shibu ◽  
N.K. Sulfikarali ◽  
K.P. Biju
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Switching Behaviour

In this work, we fabricated ZrO2 based resistive random access memory by sol-gel spin coating technique and investigated its structural, optical and resistive switching properties. The X-ray diffraction pattern revealed that 400 °C annealed ZrO2 thin film has tetragonal structure. The optical band gap value of ZrO2 thin film obtained was 5.51 eV. The resistive switching behaviour of W/ZrO2/ITO capacitor like structure was studied. It was found that no initial electroforming process required for the device. The fabricated devices show a self-compliance bipolar resistive switching behaviour and have high on off ratio (>102). Our result suggests that solution processed ZrO2 has great potential to develop transparent and flexible resistive random access memory devices.

Transistor-level characterization of static random access memory bit failures induced by random telegraph noise

2016 ◽  
Vol 55 (4S) ◽  
pp. 04ED05 ◽  
Author(s):  
Tomoko Mizutani ◽  
Takuya Saraya ◽  
Kiyoshi Takeuchi ◽  
Masaharu Kobayashi ◽  
Toshiro Hiramoto
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 327-338 ◽  
Author(s):  
Francesco M. Puglisi ◽  
Luca Larcher ◽  
Andrea Padovani ◽  
Paolo Pavan
Keyword(s):  
Charge Transport ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Operating Conditions ◽  
Current Fluctuations ◽  
Access Memory ◽  
Random Telegraph Noise ◽  
Multi Scale ◽  
Telegraph Noise

ABSTRACTIn this work we explore the mechanisms responsible for Random Telegraph Noise (RTN) fluctuations in HfOx Resistive Random Access Memory (RRAM) devices. The statistical properties of the RTN are analyzed in many operating conditions exploiting the Factorial Hidden Markov Model (FHMM) to decompose the multilevel RTN traces in a superposition of two-level fluctuations. This allows the simultaneous characterization of individual defects contributing to the RTN. Results, together with multi-scale physics-based simulations, allows thoroughly investigating the physical mechanisms which could be responsible for the RTN current fluctuations in the two resistive states of these devices, including also the charge transport features in a comprehensive framework. We consider two possible options, which are the Coulomb blockade effect and the possible existence of metastable states for the defects assisting charge transport. Results indicate that both options may be responsible for RTN current fluctuations in HRS, while RTN in LRS is attributed to the temporary screening effect of the charge trapped at defect sites around the conductive filament.

(Invited) The Interplay between Electronic and Ionic Transport in the Resistive Switching Process of Random Access Memory Devices

2014 ◽  
Vol 64 (8) ◽  
pp. 153-158 ◽  
Author(s):  
B. Magyari-Kope ◽  
L. Zhao ◽  
K. Kamiya ◽  
M. Y. Yang ◽  
M. Niwa ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Ionic Transport ◽  
Switching Process ◽  
Memory Devices ◽  
Access Memory
Sign in / Sign up

Export Citation Format

Share Document