(Invited) The Interplay between Electronic and Ionic Transport in the Resistive Switching Process of Random Access Memory Devices

2014 ◽  
Vol 64 (8) ◽  
pp. 153-158 ◽  
Author(s):  
B. Magyari-Kope ◽  
L. Zhao ◽  
K. Kamiya ◽  
M. Y. Yang ◽  
M. Niwa ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Ionic Transport ◽  
Switching Process ◽  
Memory Devices ◽  
Access Memory

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

2011 ◽  
Vol 22 (25) ◽  
pp. 254029 ◽  
Author(s):  
Blanka Magyari-Köpe ◽  
Mihir Tendulkar ◽  
Seong-Geon Park ◽  
Hyung Dong Lee ◽  
Yoshio Nishi
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Resistive Switching ◽  
Transition Metal Oxides ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory

scholarly journals Resistive switching of the HfOx/HfO2 bilayer heterostructure and its transmission characteristics as a synapse

RSC Advances ◽  
2018 ◽  
Vol 8 (73) ◽  
pp. 41884-41891 ◽  
Author(s):  
Tingting Tan ◽  
Yihang Du ◽  
Ai Cao ◽  
Yaling Sun ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Bilayer Structure ◽  
Transmission Characteristics ◽  
Access Memory ◽  
Switching Characteristics

In this work, HfOx/HfO2 homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated.

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