Donor and Acceptor Dynamics of Phosphorous Doped ZnO Nanorods with Stable p-Type Conduction: Photoluminescence and Junction Characteristics

2012 ◽  
Vol 12 (7) ◽  
pp. 5571-5576 ◽  
Author(s):  
Cheol Hyoun Ahn ◽  
Sanjay Kumar Mohanta ◽  
Hyung Koun Cho
Keyword(s):  
Zno Nanorods ◽  
Donor And Acceptor ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

Toward p-type conduction in Cs-doped ZnO: an eco-friendly synthesis method

2014 ◽  
Vol 49 (21) ◽  
pp. 7418-7424 ◽  
Author(s):  
Veena Ragupathi ◽  
Srimathi Krishnaswamy ◽  
Senthilkumaar Sada ◽  
Ganapathi Subramanian Nagarajan ◽  
Sudarkodi Raman
Keyword(s):  
Synthesis Method ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

Effects of magnesium on phosphorus chemical states and p-type conduction behavior of phosphorus-doped ZnO films

2013 ◽  
Vol 138 (3) ◽  
pp. 034704 ◽  
Author(s):  
Jichao Li ◽  
Yongfeng Li ◽  
Bin Yao ◽  
Ying Xu ◽  
Shiwang Long ◽  
...  
Keyword(s):  
Zno Films ◽  
Conduction Behavior ◽  
Chemical States ◽  
Doped Zno ◽  
P Type ◽  
Phosphorus Doped ◽  
Type Conduction

Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

2013 ◽  
Vol 103 (7) ◽  
pp. 072109 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
Vishnu Awasthi ◽  
M. Gupta ◽  
U. P. Deshpande ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

Antimony Doped ZnO Nanorods - A Change From n to p Type?

2010 ◽  
Vol 1256 ◽  
Author(s):  
Joe Briscoe ◽  
Diego E. Gallardo ◽  
Steve Dunn
Keyword(s):  
Ethylene Glycol ◽  
Zno Nanorods ◽  
Ordered Structure ◽  
Aqueous Synthesis ◽  
Reaction Solution ◽  
Sb Doping ◽  
Doped Zno ◽  
Zno Rods ◽  
P Type

AbstractThe in-situ aqueous synthesis of ZnO nanorods doped with Sb is presented. To control the inclusion of Sb into the ZnO nanorods structure ethylene glycol (EG) is added to the reaction solution. The addition of EG reduces the rate at which Sb is included in the ZnO rods and produces nanorods with a morphology that is similar to the undoped rods. This is contrary to the rods produced with Sb in the absence of EG which produce a less well ordered structure. An I/V curve taken from individual rods indicates a change in the diode behaviour. The change in I/V behaviour is associated with a change from the natural n-type behaviour of ZnO to a p-type behaviour due to the Sb doping.

p-type conduction in unintentional carbon-doped ZnO thin films

2007 ◽  
Vol 91 (7) ◽  
pp. 072101 ◽  
Author(s):  
S. T. Tan ◽  
X. W. Sun ◽  
Z. G. Yu ◽  
P. Wu ◽  
G. Q. Lo ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Carbon Doped ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

scholarly journals Realization of p-type Conduction in Antimony Doped ZnO Thin Films by PLD

2009 ◽  
Vol 22 (10) ◽  
pp. 814-820
Author(s):  
Ki-Ryeol Bae ◽  
Dong-Wook Lee ◽  
J. Elanchezhiyan ◽  
Won-Jae Lee ◽  
Yun-Mi Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

Electronic properties of Ag-doped ZnO: DFT hybrid functional study

2018 ◽  
Vol 20 (21) ◽  
pp. 14688-14693 ◽  
Author(s):  
Saeed Masoumi ◽  
Ebrahim Nadimi ◽  
Faramarz Hossein-Babaei
Keyword(s):  
Electronic Properties ◽  
Conduction Mechanism ◽  
Functional Study ◽  
Hybrid Functional ◽  
Doped Zno ◽  
P Type ◽  
Type Conduction

Studying the possibility of a p-type conduction mechanism in the Ag-doped ZnO can clarify persisting ambiguities in the related materials and devices.

ZnO homojunction UV photodetector based on solution-grown Sb-doped p-type ZnO nanorods and pure n-type ZnO nanorods

RSC Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 6311-6314 ◽  
Author(s):  
Wen Dai ◽  
Xinhua Pan ◽  
Shanshan Chen ◽  
Cong Chen ◽  
Wei Chen ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Optoelectronic Devices ◽  
Uv Photodetector ◽  
The Future ◽  
Doped Zno ◽  
P Type

The p-type Sb-doped ZnO NRs act as one of promising candidates for electronic and optoelectronic devices in the future.

Studies of Point Defect Formation and Self-Compensation in Indium Doped ZnO Nanorods by STM and STS

2008 ◽  
Vol 8 (12) ◽  
pp. 6598-6602 ◽  
Author(s):  
A. González-Carrazco ◽  
M. Herrera-Zaldívar ◽  
U. Pal
Keyword(s):  
Point Defect ◽  
Defect Formation ◽  
Zno Nanorods ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Zno Nanostructures ◽  
Tunneling Microscopy ◽  
Donor And Acceptor ◽  
Heavily Doped ◽  
Doped Zno

The effect of indium doping on the point defect formation in ZnO nanostructures is studied by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) techniques. While the incorporation of a donor dopant like indium should increase the n-type conductivity of ZnO nanostructures, it has been found that formation of VZn native acceptors in heavily doped ZnO nanostructures produces self-compensation effect, creating acceptor states in their band gap. Presence of both donor and acceptor states in heavily indium doped ZnO nanostructures are probed and identified. The mechanism of formation of such donor and acceptor states is discussed.

scholarly journals Enhanced Electrical Properties and Stability of P-Type Conduction in ZnO Transparent Semiconductor Thin Films by Co-Doping Ga and N

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1069
Author(s):  
Chien-Yie Tsay ◽  
Wan-Yu Chiu
Keyword(s):  
Thin Films ◽  
Hole Concentration ◽  
Sol Gel ◽  
Co Doping ◽  
Semiconductor Thin Films ◽  
Doped Zno ◽  
Transparent Semiconductor ◽  
P Type ◽  
Type Conduction ◽  
Co Doped

P-type ZnO transparent semiconductor thin films were prepared on glass substrates by the sol-gel spin-coating process with N doping and Ga–N co-doping. Comparative studies of the microstructural features, optical properties, and electrical characteristics of ZnO, N-doped ZnO (ZnO:N), and Ga–N co-doped ZnO (ZnO:Ga–N) thin films are reported in this paper. Each as-coated sol-gel film was preheated at 300 °C for 10 min in air and then annealed at 500 °C for 1 h in oxygen ambient. X-ray diffraction (XRD) examination confirmed that these ZnO-based thin films had a polycrystalline nature and an entirely wurtzite structure. The incorporation of N and Ga–N into ZnO thin films obviously refined the microstructures, reduced surface roughness, and enhanced the transparency in the visible range. X-ray photoelectron spectroscopy (XPS) analysis confirmed the incorporation of N and Ga–N into the ZnO:N and ZnO:Ga–N thin films, respectively. The room temperature PL spectra exhibited a prominent peak and a broad band, which corresponded to the near-band edge emission and deep-level emission. Hall measurement revealed that the ZnO semiconductor thin films were converted from n-type to p-type after incorporation of N into ZnO nanocrystals, and they had a mean hole concentration of 1.83 × 1015 cm−3 and a mean resistivity of 385.4 Ω·cm. In addition, the Ga–N co-doped ZnO thin film showed good p-type conductivity with a hole concentration approaching 4.0 × 1017 cm−3 and a low resistivity of 5.09 Ω·cm. The Ga–N co-doped thin films showed relatively stable p-type conduction (>three weeks) compared with the N-doped thin films.

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