Low-Power and Controllable Memory Window in Pt/Pr0.7Ca0.3MnO3/Yttria-Stabilized Zirconia/W Resistive Random-Access Memory Devices

2012 ◽  
Vol 12 (4) ◽  
pp. 3252-3255 ◽  
Author(s):  
Xinjun Liu ◽  
Kuyyadi P. Biju ◽  
Jubong Park ◽  
Sangsu Park ◽  
Jungho Shin ◽  
...  
Keyword(s):  
Low Power ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Window ◽  
Yttria Stabilized Zirconia ◽  
Memory Devices ◽  
Stabilized Zirconia ◽  
Access Memory

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory
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