Fabrication of p-Type Silicon Nanowire Arrays with a High Aspect Ratio Using Electrochemical and Alkaline Etching

2012 ◽  
Vol 12 (4) ◽  
pp. 3567-3570 ◽  
Author(s):  
Hwan Soo Jang ◽  
Ho-Jin Choi ◽  
andJae Hyun Kim
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Type Silicon ◽  
Alkaline Etching ◽  
Silicon Nanowire Arrays ◽  
P Type

scholarly journals Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Andam Deatama Refino ◽  
Nursidik Yulianto ◽  
Iqbal Syamsu ◽  
Andika Pandu Nugroho ◽  
Naufal Hanif Hawari ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Silicon Nanowire ◽  
Reactive Ion Etching ◽  
Lithium Ion ◽  
Nanowire Arrays ◽  
Chamber Pressure ◽  
Ion Etching ◽  
Si Nanowire ◽  
Silicon Nanowire Arrays

AbstractProduction of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire property and geometry to improve the battery performance. This report demonstrates tunable optimization of inductively coupled plasma reactive ion etching (ICP-RIE) at cryogenic temperature to fabricate vertically-aligned silicon nanowire array anodes with high verticality, controllable morphology, and good homogeneity. Three different materials [i.e., photoresist, chromium (Cr), and silicon dioxide (SiO2)] were employed as masks during the subsequent photolithography and cryogenic ICP-RIE processes to investigate their effects on the resulting nanowire structures. Silicon nanowire arrays with a high aspect ratio of up to 22 can be achieved by tuning several etching parameters [i.e., temperature, oxygen/sulfur hexafluoride (O2/SF6) gas mixture ratio, chamber pressure, plasma density, and ion energy]. Higher compressive stress was revealed for longer Si wires by means of Raman spectroscopy. Moreover, an anisotropy of lattice stress was found at the top and sidewall of Si nanowire, indicating compressive and tensile stresses, respectively. From electrochemical characterization, half-cell battery integrating ICP-RIE-based silicon nanowire anode exhibits a capacity of 0.25 mAh cm−2 with 16.67% capacity fading until 20 cycles, which has to be improved for application in future energy storage devices.

Constructing film composites of silicon nanowires@CdS quantum dot arrays with ameliorated photocatalytic performance

2018 ◽  
Vol 42 (17) ◽  
pp. 14096-14103 ◽  
Author(s):  
Xin Lin ◽  
Shao-Hai Li ◽  
Kang-Qiang Lu ◽  
Zi-Rong Tang ◽  
Yi-Jun Xu
Keyword(s):  
Quantum Dot ◽  
Silicon Nanowires ◽  
Photocatalytic Performance ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Type Silicon ◽  
Silicon Nanowire Arrays ◽  
Cds Quantum Dot ◽  
P Type ◽  
Film Composites

The film composites of n-type CdS QD decorated p-type silicon nanowire arrays are assembled toward H2 evolution with improved photoactivity and photostability.

Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Etching Time ◽  
Silicon Nanowire Arrays ◽  
Peak Intensity ◽  
One Step ◽  
Etching Parameters ◽  
P Type

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

FABRICATION OF LARGE-AREA SILICON NANOWIRE ARRAYS FOR SOLAR CELLS

2012 ◽  
Vol 11 (06) ◽  
pp. 1240026
Author(s):  
WUXING LAI ◽  
GUOQIANG XU ◽  
WEI ZHANG ◽  
TIELIN SHI
Keyword(s):  
Solar Cells ◽  
Aspect Ratio ◽  
Silicon Wafer ◽  
Low Cost ◽  
Silicon Nanowire ◽  
Large Area ◽  
Water Contact ◽  
Potential Implication ◽  
Silicon Nanowire Arrays ◽  
P Type

In this paper, a simple, low-cost and efficient method was adopted to fabricate large-area Si nanowire ( SiNW ) arrays by inserting the p-type (100) silicon wafer into aqueous HF + AgNO3 solution for a certain time at room temperature. Surface of the silicon wafer with high aspect ratio SiNW shows the characteristics of low-reflection as low as 5% in the 450–800 nm wavelength range, especially less than 1% after etching for 60 min. The surface also exhibits super-hydrophobicity with water contact angle up to 150°. We investigated the relationship between the etching duration and aspect ratio of the SiNW systematically and demonstrated that the aspect ratio of the SiNW can be controlled. The antireflection surface shows a potential implication in increasing the conversation efficiency for solar cells, and the self-cleaning properties will further enhance the resistance to environment conditions for a long-life work.

scholarly journals Ultrafast fabrication of high-aspect-ratio macropores in P-type silicon: toward the mass production of microdevices

2018 ◽  
Vol 6 (11) ◽  
pp. 648-654 ◽  
Author(s):  
Daohan Ge ◽  
Wenbing Li ◽  
Le Lu ◽  
Jinxiu Wei ◽  
Xiukang Huang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Mass Production ◽  
Type Silicon ◽  
P Type

CF4 Plasma-treated Porous Silicon Nanowire Arrays Laminated with MnO2 Nanoflakes for Asymmetric Pseudocapacitors

2021 ◽  
pp. 129515
Author(s):  
Indrajit V. Bagal ◽  
Nilesh R. Chodankar ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Swati J. Patil ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Porous Silicon Nanowire

scholarly journals Nanowires: Decoupling Diameter and Pitch in Silicon Nanowire Arrays Made by Metal-Assisted Chemical Etching (Adv. Funct. Mater. 1/2014)

2014 ◽  
Vol 24 (1) ◽  
pp. 105-105 ◽  
Author(s):  
Junghoon Yeom ◽  
Daniel Ratchford ◽  
Christopher R. Field ◽  
Todd H. Brintlinger ◽  
Pehr E. Pehrsson
Keyword(s):  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Silicon Nanowire Arrays ◽  
Metal Assisted Chemical Etching
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