Effect of Ultraviolet Illumination and Ambient Gases on the Photoluminescence and Electrical Properties of Nanoporous Silicon Layer for Organic Vapor Sensor

2012 ◽  
Vol 12 (8) ◽  
pp. 6602-6607
Author(s):  
Narin Atiwongsangthong
Keyword(s):  
Electrical Properties ◽  
Silicon Layer ◽  
Nanoporous Silicon ◽  
Organic Vapor ◽  
Ultraviolet Illumination ◽  
Ambient Gases ◽  
Vapor Sensor

scholarly journals Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy

2008 ◽  
Vol 57 (9) ◽  
pp. 5923
Author(s):  
Wang Lai ◽  
Zhang Xian-Peng ◽  
Xi Guang-Yi ◽  
Zhao Wei ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

2020 ◽  
Vol 54 (5) ◽  
pp. 596-608
Author(s):  
P. V. Seredin ◽  
D. L. Goloshchapov ◽  
D. S. Zolotukhin ◽  
A. S. Lenshin ◽  
Yu. Yu. Khudyakov ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Silicon Layer ◽  
Practical Implementation ◽  
Nanoporous Silicon

Porous silicon organic vapor sensor

2006 ◽  
Vol 29 (1) ◽  
pp. 51-55 ◽  
Author(s):  
G. García Salgado ◽  
T. Díaz Becerril ◽  
H. Juárez Santiesteban ◽  
E. Rosendo Andrés
Keyword(s):  
Porous Silicon ◽  
Organic Vapor ◽  
Vapor Sensor

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

Electrical properties of metal/porous silicon/p-Si structures with thin porous silicon layer

2001 ◽  
Vol 90 (8) ◽  
pp. 4184-4190 ◽  
Author(s):  
L. A. Balagurov ◽  
S. C. Bayliss ◽  
A. F. Orlov ◽  
E. A. Petrova ◽  
B. Unal ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer

scholarly journals Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Min-Hang Weng ◽  
Cheng-Tang Pan ◽  
Chien-Wei Huang ◽  
Ru-Yuan Yang
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Grain Growth ◽  
Silicon Film ◽  
Silicon Layer ◽  
Optical Microscope ◽  
Dark Conductivity ◽  
Capping Layer ◽  
Short Annealing

We investigated the capping layer effect of SiNx(silicon nitride) on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon) prepared by aluminum induced crystallization (AIC). The primary multilayer structure comprised Al (30 nm)/SiNx(20 nm)/a-Si (amorphous silicon) layer (100 nm)/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD) and Raman spectra. The grain growth was analyzed via optical microscope (OM) and scanning electron microscopy (SEM). The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V) measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNxcapping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

Electrical Properties Of GaN Layers Grown By Metal Organic Vapor Phase Epitaxy (MOVPE)

2011 ◽  
Author(s):  
Victor-Tapio Rangel-Kuoppa ◽  
Cesia Guarneros Aguilar ◽  
Victor Sánchez-Reséndiz ◽  
Jisoon Ihm ◽  
Hyeonsik Cheong
Keyword(s):  
Electrical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Fiber-optic organic vapor sensor

1991 ◽  
Vol 25 (7) ◽  
pp. 1301-1304 ◽  
Author(s):  
Steven M. Barnard ◽  
David R. Walt
Keyword(s):  
Fiber Optic ◽  
Organic Vapor ◽  
Vapor Sensor
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