An Automatic Modeling System of the Reaction Mechanisms for Chemical Vapor Deposition Processes Using Real-Coded Genetic Algorithms

2011 ◽  
Vol 11 (9) ◽  
pp. 8044-8048 ◽  
Author(s):  
Takahiro Takahashi ◽  
Hiroyuki Nakai ◽  
Hiroki Kinpara ◽  
Yoshinori Ema
Keyword(s):  
Genetic Algorithms ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reaction Mechanisms ◽  
Chemical Vapor ◽  
Automatic Modeling ◽  
Deposition Processes ◽  
Real Coded Genetic Algorithms

Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Chemical Vapor Deposition Growth ◽  
Deposition Processes ◽  
Cdznte Substrates ◽  
First Time ◽  
Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

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