Stability of High Temperature Chemical Vapor Deposited Silicon Based Structures on Metals for Solar Conversion

2011 ◽  
Vol 11 (9) ◽  
pp. 8318-8322
Author(s):  
Isabelle Gelard ◽  
Guy Chichignoud ◽  
Elisabeth Blanquet ◽  
Hoan Nguyen Xuan ◽  
Ruben Cruz ◽  
...  
Keyword(s):  
High Temperature ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Solar Conversion ◽  
Silicon Based

The mechanical enhancement of chemical vapor deposited diamond film by plasma low-pressure/high-temperature treatment

Carbon ◽  
2013 ◽  
Vol 65 ◽  
pp. 365-370 ◽  
Author(s):  
Sheng Liu ◽  
Jin-long Liu ◽  
Cheng-ming Li ◽  
Jian-chao Guo ◽  
Liang-xian Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Diamond Film ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Chemical Vapor Deposited

Conductance in Microcrystalline BbxCx/Si Heterojunction Diodes

1992 ◽  
Vol 283 ◽  
Author(s):  
Sunwoo Lee ◽  
Thuong Ton ◽  
D. Zych ◽  
P. A. Dowben
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electronic Material ◽  
Boron Carbide ◽  
Band Gap ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Chemical Vapor Deposited ◽  
Heterojunction Diodes

ABSTRACTPlasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.

Interface Reactions in CdTe Solar Cell Processing

1997 ◽  
Vol 485 ◽  
Author(s):  
D. Albin ◽  
R. Dhere ◽  
A. Swartzlander-Guest ◽  
D. Rose ◽  
X. Li ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thermal Treatments ◽  
Cdte Solar Cells ◽  
Interface Reactions ◽  
Chemical Vapor Deposited ◽  
Solar Conversion ◽  
Lift Off ◽  
Conversion Efficiencies ◽  
Substrate Temperatures ◽  
High Processing

AbstractCurrently, the best performing CdS/CdTe solar cells use a superstrate structure in which CdTe is deposited on a heated CdS/SnO2/Glass substrate. In the close-spaced-sublimation (CSS) process, substrate temperatures in the range 550°C to 620°C are common. Understanding how these high processing temperatures impact reactions at the CdS/CdTe interface in addition to reactions between previously deposited layers is critical. At the SnO2/CdS interface we have determined that SnO2 can be susceptible to reduction, particularly in H2 ambients. Room-temperature sputtered SnO2 shows the most susceptibility. In contrast, higher growth temperature chemical vapor deposited (CVD) SnO2 appears to be much more stable. Elimination of unstable SnO2 layers, and the substitution of thermal treatments for H2 anneals has produced total-area solar conversion efficiencies of 13.6% using non-optimized SnO2 substrates and chemical-bath deposited (CBD) CdS. Alloying and interdiffusion at the CdS/CdTe interface was studied using a new lift-off approach which allows enhanced compositional and structural analysis at the interface. Small-grained CdS, grown by a low-temperature CBD process, results in more CdTe1-x.Sx alloying (x=12–13%) relative to larger-grained CdS grown by high-temperature CSS (x7sim;2–3%). Interdiffusion of S and Te at the interface, measured with lift-off samples, appears to be inversely proportional to the amount of oxygen used during the CSS CdTe deposition. Our highest efficiency to date using CSS-grown CdS is 10.7% and was accomplished by eliminating oxygen during the CdTe deposition.

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