Enhanced flux pinning by BaZrO3 and (Gd,Y)2O3 nanostructures in metal organic chemical vapor deposited GdYBCO high temperature superconductor tapes

2009 ◽  
Vol 94 (6) ◽  
pp. 062513 ◽  
Author(s):  
Yimin Chen ◽  
Venkat Selvamanickam ◽  
Yifei Zhang ◽  
Yuri Zuev ◽  
Claudia Cantoni ◽  
...  
Keyword(s):  
High Temperature ◽  
Flux Pinning ◽  
High Temperature Superconductor ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposited ◽  
Metal Organic

Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications

2011 ◽  
Vol 1325 ◽  
Author(s):  
K. Aryal ◽  
I. W. Feng ◽  
B. N. Pantha ◽  
J. Li ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Er Doped ◽  
Organic Chemical Vapor Deposition ◽  
Co Doped ◽  
Ingan Alloys ◽  
Temperature Applications

ABSTRACTThermoelectric (TE) properties of erbium-silicon co-doped InxGa1-xN alloys (InxGa1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that doping of InGaN alloys with Er atoms of concentration, N[Er] larger than 5x1019 cm-3, has substantially reduced the thermal conductivity, κ, in low In content InGaN alloys. It was observed that κ decreases as N[Er] increases in Si co-doped In0.10Ga0.90N alloys. A room temperature ZT value of ~0.05 was obtained in In0.14Ga0.86N: Er + Si, which is much higher than that obtained in un-doped InGaN with similar In content. Since low In content InGaN is stable at high temperatures, these Er+Si co-doped InGaN alloys could be promising TE materials for high temperature applications.

Growth and properties analysis of metal-organic chemical vapor deposited MgxZn1−x O films on C-Al2O3 substrates

2008 ◽  
Vol 3 (3) ◽  
pp. 261-264 ◽  
Author(s):  
Zengliang Shi ◽  
Dali Liu ◽  
Xiaolong Yan ◽  
Zhongmin Gao ◽  
Shiying Bai
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposited ◽  
Metal Organic
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