Electrical Characteristics of Ge-Based Metal-Insulator-Semiconductor Devices with Ge3N4 Dielectrics Formed by Plasma Nitridation

2011 ◽  
Vol 11 (4) ◽  
pp. 2856-2860 ◽  
Author(s):  
Gaku Okamoto ◽  
Katsuhiro Kutsuki ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Heiji Watanabe
Keyword(s):  
Semiconductor Devices ◽  
Electrical Characteristics ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Plasma Nitridation

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

2014 ◽  
Vol 116 (1) ◽  
pp. 014504 ◽  
Author(s):  
R. V. Galatage ◽  
D. M. Zhernokletov ◽  
H. Dong ◽  
B. Brennan ◽  
C. L. Hinkle ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Frequency Dispersion ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gap States

scholarly journals DYNAMIC STORAGE TIME MEASUREMENTS OF N-TYPE Hg1-xCdxTe METAL-INSULATOR-SEMICONDUCTOR DEVICES

1994 ◽  
Vol 43 (11) ◽  
pp. 1883
Author(s):  
HUANG HE ◽  
TANG DING-YUAN ◽  
TONG FEI-MING ◽  
ZHENG GUO-ZHEN
Keyword(s):  
Storage Time ◽  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Dynamic Storage

Analysis of thin CdS layers on InP for improved metal–insulator–semiconductor devices

1996 ◽  
Vol 80 (5) ◽  
pp. 2873-2882 ◽  
Author(s):  
Helen M. Dauplaise ◽  
Kenneth Vaccaro ◽  
Andrew Davis ◽  
George O. Ramseyer ◽  
Joseph P. Lorenzo
Keyword(s):  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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