Current Rectification in a Single Silicon Nanowire p–n Junction

2008 ◽  
Vol 8 (5) ◽  
pp. 2419-2421 ◽  
Author(s):  
Yaswanth Rangineni ◽  
Cheng Qi ◽  
Gary Goncher ◽  
Raj Solanki ◽  
Kurt Langworthy
Keyword(s):  
Electron Beam ◽  
Silicon Nanowires ◽  
Electron Beam Lithography ◽  
Reverse Bias ◽  
Silicon Nanowire ◽  
Exponential Behavior ◽  
Current Leakage ◽  
Leakage Mechanism ◽  
Current Voltage ◽  
Current Rectification

Diodes within individual silicon nanowires were fabricated by doping them during growth to produce p–n junctions. Electron beam lithography was then employed to contact p- and n-doped ends of these nanowires. The current–voltage (I–V) measurements showed diode-like characteristics with a typical threshold voltage (Vt) of about 1 V and an ideality factor (n) of about 3.6 in the quasi-neutral region. The reverse bias I–V measurement showed an exponential behavior, indicating tunneling as the current leakage mechanism.

Fabrication of N-Type Silicon Nanowire Biosensor for Sub-10-Femtomolar Concentration of Immunoglobulin

2018 ◽  
Vol 790 ◽  
pp. 28-33 ◽  
Author(s):  
Tashiro Tomoya ◽  
Hui Zhang ◽  
Kakeru Oshima ◽  
Yuya Sakurai ◽  
Takaaki Suzuki ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Electrical Resistance ◽  
Silicon Nanowire ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Type Silicon ◽  
Current Voltage ◽  
Femtomolar Concentration ◽  
Biosensor Device

A simple fabrication process of an n-type silicon nanowire (SiNW) biosensor for sub-10 femtomolar (fM) concentration immunoglobulin detection was presented in this work. The SiNWs with different widths of 80-190 nm were fabricated using electron beam lithography and reaction ion etching techniques. The electrical characteristics of SiNWs with various widths were measured. And it can be observed that thin SiNW has high resistance, which is in agreement with electrical resistance theory. Furthermore, the surface of the fabricated SiNW was functionalized by 3-aminopropyltriethoxysilane for making the biosensor device to detect the binding of immunoglobulin G (IgG) molecules. The responsivity of the biosensor was investigated by observing electrical performance in response due to IgG with various concentration from 6 fM to 600 nanomolar (nM). The resistance changing ratio based on the current voltage (I-V) characteristics was analyzed and it increased with increasing of the IgG concentration. As a result, it demonstrated that the n-type SiNW biosensor has the ability to detect the IgG molecules with low concentration of 6 fM.

Fabrication of Silicon Nanowires by Electron Beam Lithography and Thermal Oxidation Size Reduction Method

2013 ◽  
Vol 832 ◽  
pp. 415-418 ◽  
Author(s):  
Mohammad Nuzaihan Md Nor ◽  
Uda Hashim ◽  
Taib Nazwa ◽  
Tijjani Adam
Keyword(s):  
Electron Beam ◽  
Thermal Oxidation ◽  
Silicon Nanowires ◽  
Electron Beam Lithography ◽  
Reduction Method ◽  
Size Reduction ◽  
Simple Method ◽  
Force Microscopy ◽  
Initial Silicon ◽  
20 Nm

A simple method for the fabrication of silicon nanowires using Electron Beam Lithography (EBL) combined with thermal oxidation size reduction method is presented. EBL is used to define the initial silicon nanowires of dimensions approximately 100 nm. Size-reduction method is employed for reaching true nanoscale of dimensions approximately 20 nm. Dry oxidation of silicon is well investigated process for self-limited size-reduction of silicon nanowires. In this paper, successful size reduction of silicon nanowires is presented and surface topography characterizations using Atomic Force Microscopy (AFM) are reported.

scholarly journals Influence of Defects on Solar Cell Characteristics

2009 ◽  
Vol 156-158 ◽  
pp. 1-10 ◽  
Author(s):  
Otwin Breitenstein ◽  
Jan Bauer ◽  
Pietro P. Altermatt ◽  
Klaus Ramspeck
Keyword(s):  
Solar Cells ◽  
Reverse Bias ◽  
Present Knowledge ◽  
Silicon Solar Cells ◽  
Extended Defects ◽  
Exponential Behavior ◽  
Current Voltage ◽  
Recombination Current ◽  
Bias Range ◽  
The Given

The current-voltage (I-V) characteristics of most industrial silicon solar cells deviate rather strongly from the exponential behavior expected from textbook knowledge. Thus, the recombination current may be orders of magnitude larger than expected for the given material quality and often shows an ideality factor larger than 2 in a wide bias-range, which cannot be explained by classical theory either. Sometimes, the cells contain ohmic shunts although the cell’s edges have been perfectly insolated. Even in the absence of such shunts, the characteristics are linear or super-linear under reverse bias, while a saturation would be classically expected. Especially in multicrystalline cells the breakdown does not tend to occur at -50 V reverse bias, as expected, but already at about -15 V or even below. These deviations are typically caused by extended defects in the cells. This paper reviews the present knowledge of the origin of such non-ideal I-V characteristics of silicon solar cells and introduces new results on recombination involving coupled defect levels.

Fabrication of One-dimensional Silicon Nano-wires Based on Proximity Effects of Electron-beam Lithography

2005 ◽  
Vol 862 ◽  
Author(s):  
S. F. Hu ◽  
C. L. Sung
Keyword(s):  
Electron Beam ◽  
Thermal Effects ◽  
Silicon Nanowire ◽  
Silicon Layer ◽  
Proximity Effects ◽  
One Dimensional ◽  
Current Voltage ◽  
Gate Potential ◽  
Current Voltage Characteristics ◽  
Nano Wires

AbstractOne-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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