Electrochemically Grown Pd Nanoparticles Used for Synthesis of Carbon Nanotube by Microwave Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 7 (12) ◽  
pp. 4272-4277 ◽  
Author(s):  
Rakesh K. Joshi ◽  
Masamishi Yoshimura ◽  
Yusuke Matsuura ◽  
Kazuyuki Ueda ◽  
Kei Tanaka
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Pd Nanoparticles ◽  
Silicon Substrates ◽  
Face Centered Cubic ◽  
Transmission Electron ◽  
Face Centered

Pd nanoparticles of well-defined shapes with face centered cubic structure were grown electrochemically on silicon substrates with high degree of reproducibility. As direct application of these electrochemically grown Pd nanostructures they have been used as catalyst for the growth of multi wall carbon nanotube (MWCNT). It is observed that the MWCNTs are filled with a Pd based material during growth by microwave plasma enhanced chemical vapor deposition (MPECVD) technique. High-resolution transmission electron microscopy, used to study the material inside MWCNT suggests the formation of PdH0 649 or Pd2 Si during the growth of carbon nanotube. Raman spectroscopy has been used to study the structure of the MPECVD grown carbon nanotubes.

Aligned Carbon Nanotubes Via Microwave Plasma Enhanced Chemical Vapor Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
H. Cui ◽  
D. Palmer ◽  
O. Zhou ◽  
B. R. Stoner
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Multi Wall Carbon Nanotubes ◽  
Field Emission Properties ◽  
Transmission Electron

ABSTRACTAligned multi-wall carbon nanotubes have been grown on silicon substrates by microwave plasma enhanced chemical vapor deposition using methane/ammonia mixtures. The concentration ratio of methane/ammonia in addition to substrate temperature was varied. The morphology, structure and alignment of carbon nanotubes were studied by scanning electron microscopy and transmission electron microscopy. Both concentric hollow and bamboo-type multi-wall carbon nanotubes were observed. Growth rate, size distribution, alignment, morphology, and structure of carbon nanotubes changed with methane/ammonia ratio and growth temperature. Preliminary results on field emission properties are also presented.

Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 1230-1235 ◽  
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

1997 ◽  
Vol 12 (10) ◽  
pp. 2686-2698 ◽  
Author(s):  
L. Fayette ◽  
B. Marcus ◽  
M. Mermoux ◽  
N. Rosman ◽  
L. Abello ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sequential Analysis ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Internal Stresses ◽  
Nucleation Density ◽  
Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

DEPOSITION AND CHARACTERIZATION OF NANOCRYSTALLINE DIAMOND FILMS ON MIRROR-POLISHED Si SUBSTRATE BY BIASED ENHANCED MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 845-852
Author(s):  
T. Soga ◽  
T. Sharda ◽  
T. Jimbo ◽  
M. Umeno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Hard and smooth nanocrystalline diamond (NCD) thin films were deposited on polished silicon substrates by biased enhanced growth in microwave plasma chemical vapor deposition. The films deposited with varying the methane concentration and biasing voltage were characterized by Raman spectroscopy, nano-indenter, x-ray diffraction and atomic force microscopy. Stress in the films increases with decreasing methane concentration in the gas-phase and with increasing biasing. The adhesion between NCD film and Si substrate is very strong sustaining the compressive stress as high as high as 85 GPa. It was hypothesized that hydrogen content of the films and graphitic content of the films are responsible in generating stress. The hardness is well correlated with the Raman peak intensity ratio of NCD peak to G peak.

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