Investigation of the Thermal Stability of 2-D Patterns of Au Nanoparticles

2007 ◽  
Vol 7 (8) ◽  
pp. 2863-2869 ◽  
Author(s):  
Ting-Yu Shih ◽  
Aristides A. G. Requicha ◽  
Mark E. Thompson ◽  
Bruce E. Koel
2020 ◽  
Author(s):  
O. S. Bezkrovnyi ◽  
P. Kraszkiewicz ◽  
W. Mista ◽  
L. Kepinski

Abstract The thermal stability of Au nanoparticles on ceria support of various morphology (nanocubes, nanooctahedra, and {111}-nanofacetted nanocubes) in oxidizing and reducing atmospheres was investigated by electron microscopy. A beneficial effect of the reconstruction of edges of ceria nanocubes into zigzagged {111}-nanofacetted structures on the inhibition of sintering of Au nanoparticles was shown. The influence of different morphology of Au particles on various ceria supports on the reducibility and catalytic activity in CO oxidation, and CO PROX of Au/ceria catalysts was also investigated and discussed. It was shown, that ceria nanocubes with flat {110} terminated edges are more suitable as a support for Au nanoparticles, used to catalyze CO oxidation, than zigzagged {111}- nanofacetted structures. Graphic Abstract


2017 ◽  
Vol 31 (07) ◽  
pp. 1741001
Author(s):  
Yanlin Jia ◽  
Siqi Li ◽  
Weihong Qi ◽  
Mingpu Wang ◽  
Zhou Li ◽  
...  

Molecular dynamics (MDs) simulations were used to explore the thermal stability of Au nanoparticles (NPs) with decahedral, cuboctahedral, icosahedral and Marks NPs. According to the calculated cohesive energy and melting temperature, the Marks NPs have a higher cohesive energy and melting temperature compared to these other shapes. The Lindemann index, radial distribution function, deformation parameters, mean square displacement and self-diffusivity have been used to characterize the structure variation during heating. This work may inspire researchers to prepare Marks NPs and apply them in different fields.


2019 ◽  
Vol 7 (18) ◽  
pp. 10980-10987 ◽  
Author(s):  
Xiaoqing Cao ◽  
Jun Zhou ◽  
Hongna Wang ◽  
Song Li ◽  
Wei Wang ◽  
...  

Abnormal thermal stability and high catalytic activity of sub-10 nm Au nanoparticles prepared by novel interfacial plasma electrolytic oxidation.


Langmuir ◽  
2012 ◽  
Vol 28 (14) ◽  
pp. 6045-6051 ◽  
Author(s):  
Yonghe Pan ◽  
Yan Gao ◽  
Dandan Kong ◽  
Guodong Wang ◽  
Jianbo Hou ◽  
...  

Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

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