Synthesis of Silicon Carbide Nanotubes by Chemical Vapor Deposition

2007 ◽  
Vol 7 (2) ◽  
pp. 647-652 ◽  
Author(s):  
Zhengfang Xie ◽  
Deliang Tao ◽  
Jiqing Wang
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wall Structure ◽  
Outer Diameter ◽  
X Ray ◽  
Silicon Carbide Nanotubes ◽  
Gaseous Source

Silicon carbide nanotubes (SiCNTs) were directly synthesized by chemical vapor deposition (CVD) in the paper. Methyltrichlorosilane (MTS) was selected as the SiC gaseous source and, ferrocence and thiophene as the catalyst and the cocatalyst, respectively. The influences of reaction temperature, contents of catalyst and cocatalyst, and content of gaseous source on the morphologies of the products were investigated, respectively. The products were identified by high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and energy-dispersive X-ray (EDX), respectively. The synthesis of SiCNTs by CVD suggested a condition-dependent process. Novel SiCNTs, with 20∼80 nm in outer diameter and 15∼35 nm in inner diameter, respectively, were observed. The wall structure similar to that of carbon nanotubes was not found for the SiCNTs.

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

2016 ◽  
Vol 697 ◽  
pp. 841-845 ◽  
Author(s):  
Jia Xing Chang ◽  
Rong Zheng Liu ◽  
Ma Lin Liu ◽  
You Lin Shao ◽  
Bing Liu
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Raw Material ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
X Ray ◽  
Wide Range

Silicon carbide nanowires have been extensively studied because of their unique physical and chemical properties. They can be applied in high temperature, high frequency, high power, and corrosive environments, and have a wide range of applications in electronics, chemical industry, energy and other fields. In this paper, SiC nanowires with high output were synthesized by chemical vapor deposition method using methyltrichlorosilane as raw material. The influences of the catalyst and temperature were studied. SiC nanochains were also obtained by adding Al2O3 powder under appropriate temperature controlled strategy. These two kinds of one-dimensional SiC nanomaterials were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectrometer (EDS) and transmission electron microscope (TEM) methods.

scholarly journals One-Step Chemical Vapor Deposition Synthesis of 3D N-doped Carbon Nanotube/N-doped Graphene Hybrid Material on Nickel Foam

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 700 ◽  
Author(s):  
Hua-Fei Li ◽  
Fan Wu ◽  
Chen Wang ◽  
Pei-Xin Zhang ◽  
Hai-Yan Hu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nickel Foam ◽  
Chemical Vapor ◽  
Hybrid Nanostructures ◽  
X Ray ◽  
Doped Graphene ◽  
One Step

3D hybrid nanostructures connecting 1D carbon nanotubes (CNTs) with 2D graphene have attracted more and more attentions due to their excellent chemical, physical and electrical properties. In this study, we firstly report a novel and facile one-step process using template-directed chemical vapor deposition (CVD) to fabricate highly nitrogen doped three-dimensional (3D) N-doped carbon nanotubes/N-doped graphene architecture (N-CNTs/N-graphene). We used nickel foam as substrate, melamine as a single source for both carbon and nitrogen, respectively. The morphology and microstructure were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, isothermal analyses, X-ray photoelectron microscopy and Raman spectra. The obtained 3D N-CNTs/N-graphene exhibits high graphitization, a regular 3D structure and excellent nitrogen doping and good mesoporosity.

scholarly journals Metal film deposition by laser breakdown chemical vapor deposition

1986 ◽  
Vol 1 (3) ◽  
pp. 420-424 ◽  
Author(s):  
T.R. Jervis ◽  
L.R. Newkirk
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 μ where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.

scholarly journals Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (9) ◽  
pp. 2417-2418 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where {111} planes in the β–SiC substrate coincided with {0001} planes in the α–SiC features. These α–SiC features occurred only at twins on {111} planes of the β–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

Chemical Vapor Deposition of ZnS:Mn for Thin-Film Electroluminescent Display Applications

2004 ◽  
Vol 19 (3) ◽  
pp. 697-706 ◽  
Author(s):  
Anna W. Topol ◽  
Kathleen A. Dunn ◽  
Karl W. Barth ◽  
Guillermo M. Nuesca ◽  
Brian K. Taylor ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Process Window ◽  
X Ray

Results are presented from a systematic investigation to design and optimize a low-pressure chemical vapor deposition (CVD) process for manganese-doped zinc sulfide (ZnS:Mn) thin films for electroluminescent (EL) device applications. The CVD process used diethylzinc (DEZ), di-π-cyclopentadienyl manganese (CPMn), and hydrogen sulfide (H2S) as co-reactants and hydrogen (H2) as carrier gas. A design of experiments approach was used to derive functionality curves for the dependence of ZnS:Mn film properties on substrate temperature and flow rates (partial pressures) of DEZ, CPMn, H2S, and H2. Film physical, chemical, structural, and optical properties were examined using Rutherford backscattering spectrometry, dynamic secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, nuclear-reaction analysis, x-ray diffraction, transmission electron microscopy, atomic force microscopy, and scanning electron microscopy. EL measurements were carried out on ZnS:Mn-based dielectric–sulfur–dielectric stacks incorporated into alternating-current thin-film electroluminescent devices. An optimized process window was established for the formation of films with predominantly (0 0 2) orientation, grain size larger than 0.2 μm, and Mn dopant level approximately 0.5 at.%. A brightness of 407 cd/m2 (119 fL) and efficiency of 1.6 lm/W were obtained, as measured at 40 V above threshold voltage and 60 Hz frequency.

scholarly journals Chemical vapor deposition of germanium-rich CrGex nanowires

2021 ◽  
Vol 12 ◽  
pp. 1365-1371
Author(s):  
Vladislav Dřínek ◽  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Jan Grym ◽  
Radek Fajgar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Complex Structure ◽  
Chemical Vapor ◽  
Analytical Techniques ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Crystalline Germanium

Chemical vapor deposition was applied to synthetize nanostructured deposits containing several sorts of nanoobjects (i.e., nanoballs, irregular particles, and nanowires). Analytical techniques, that is, high-resolution transmission electron microscopy, scanning electron microscopy, electron dispersive X-ray analysis, selected area electron diffraction, and X-ray photoelectron spectroscopy, showed that unlike nanoballs and particles composed of crystalline germanium, the layer was made of chromium germanide CrGex. The nanowires possessed a complex structure, namely a thin crystalline germanium core and amorphous CrGex coating. The composition of the nanowire coating was [Cr]/[Ge] = 1:(6–7). The resistance of the nanowire–deposit system was estimated to be 2.7 kΩ·cm using an unique vacuum contacting system.

Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 289-294 ◽  
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Bart Van Zeghbroeck
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Charge Carrier Density ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Hot Filament

ABSTRACTFor the first time, we are reporting the growth of high quality single crystalline 3C-SiC epitaxially on hexagonal silicon carbide substrates using Hot Filament Chemical Vapor Deposition (HF-CVD) on full 4” wafers. Rocking curve X-Ray diffraction (XRD) measurements resulted in a full width at half maximum (FWHM) as low as 88 arcsec for a 40 µm thick layer. We achieved this quality using a carefully optimized process making use of the additional degrees of freedom the hot filaments create. The filaments allow for precursor pre-cracking and a tuning of the vertical thermal gradient, which creates an improved thermal field compared to conventional Chemical Vapor Deposition. Growth rates of up to 8 µm/h were achieved with standard silane and propane chemistry, and further increased to 20 µm/h with chlorinated chemistry. The use of silicon carbide substrates promises superior layer quality compared to silicon substrates due to their better match in lattice parameters and thermal expansion coefficients. High resolution scanning electron microscopy, X-Ray rocking measurements, and micro-Raman allow us to assess the crystalline quality of our material and to compare it to layers grown on low-cost silicon substrates. Hall measurements reveal a linear increase of the charge carrier density in the material with the flow of nitrogen gas as a dopant. Electron densities above 10-18 cm-3 have been reached.

Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

2002 ◽  
Vol 737 ◽  
Author(s):  
X.B. Zeng ◽  
X.B. Liao ◽  
H.W. Diao ◽  
Z.H. Hu ◽  
Y.Y. Xu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Body ◽  
Si Nanowires ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

ABSTRACTPolymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440°C, using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 °C is needed. The diameters of Si nanowires range from 15 to 100 nm. The structure, morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.

Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

1993 ◽  
Vol 8 (5) ◽  
pp. 1086-1092 ◽  
Author(s):  
Brian W. Sheldon ◽  
Theodore M. Besmann ◽  
Karren L. More ◽  
Thomas S. Moss
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Surface Layers ◽  
Reactor Configuration ◽  
Polycrystalline Silicon Carbide

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where h111j planes in th—SiC substrate coincided with h0001j planes in the a–SiC features. These a–SiC features occurred only at twins on h111j planes of the b–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

CRYSTALLINE CARBON NITRIDE FILMS GROWN BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1091-1095 ◽  
Author(s):  
W. T. ZHENG ◽  
X. WANG ◽  
T. DING ◽  
X. T. LI ◽  
W. D. FEI ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition

The carbon nitride films were deposited on single crystalline Si(001) and polycrystalline diamond substrates using microwave plasma chemical vapor deposition (MPCVD) with CH4+N2 as well as CH4+NH3 mixtures as the reactive gas source, respectively. Different CH4/N2 and CH4/NH3 gas ratios were tested. The results showed that carbon nitride films with different nitrogen content could more readily be obtained using a mixture of CH4/N2 rather than CH4/NH3. The films grown by different CH4/N2 ratios showed different morphology, which was revealed by scanning electron microscopy (SEM). The crystalline carbon nitride films containing silicon were realized using a CH4:N2 = 1:100 ratio. X-ray photoelectron spectroscopy (XPS), Auger electron microscopy (AES), Raman spectroscopy, and X-ray diffraction were used to characterize the composition and chemical bonding of the deposited films.

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