Preparation of TaN Thin Film by H2 Plasma Assisted Atomic Layer Deposition Using Tert-Butylimino-Tris-Ethylmethylamino Tantalum

2006 ◽  
Vol 6 (11) ◽  
pp. 3392-3395 ◽  
Author(s):  
Deung-Kwan Kim ◽  
Bo-Hye Kim ◽  
Hee-Gweon Woo ◽  
Do-Heyoung Kim ◽  
Hyun Koock Shin
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Rf Power ◽  
Film Properties ◽  
Layer Deposition ◽  
Plasma Pulse ◽  
The Stability

The plasma assisted atomic layer deposition (ALD) of tantalum nitride (TaN) thin films were conducted using tert-butylimino-tris-ethylmethylamino tantalum (TBTEMAT) and hydrogen plasma at 250 °C. The effects of H2-plasma pulse time and RF power on the film properties, such as resistivity, surface roughness, step coverage and stability in air, were examined. The film growth rate (thickness/cycle) was in the range of 0.05–0.08 nm/cycle and the resistivity of the films varied from 490 to 70000 μΩ cm, depending on the plasma conditions. Longer plasma pulse times and increasing RF power yielded films of lower resistivity along with improving the stability. The films were smooth and the conformality of the films deposited in 0.28 μm holes with an aspect ratio of 7:1 was 100%.

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

scholarly journals Understanding the role of rf-power on AlN film properties in hollow-cathode plasma-assisted atomic layer deposition

2020 ◽  
Vol 38 (2) ◽  
pp. 022405 ◽  
Author(s):  
Saidjafarzoda Ilhom ◽  
Deepa Shukla ◽  
Adnan Mohammad ◽  
John Grasso ◽  
Brian Willis ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hollow Cathode ◽  
Atomic Layer ◽  
Rf Power ◽  
Cathode Plasma ◽  
Film Properties ◽  
Layer Deposition ◽  
Aln Film

Deposition and Characteristics of Tantalum Nitride films by Plasma Assisted Atomic Layer Deposition as Cu Diffusion Barrier

2003 ◽  
Vol 766 ◽  
Author(s):  
Kyoung-Il Na ◽  
Se-Jong Park ◽  
Woo-Cheol Jeong ◽  
Se-Hoon Kim ◽  
Sung-Eun Boo ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Oxygen ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Layer Deposition ◽  
Cu Diffusion Barrier ◽  
The Stability ◽  
Oxygen Impurities

AbstractFor a diffusion barrier against Cu, tantalum nitride (TaN) films have been successfully deposited by both conventional thermal atomic layer deposition (ALD) and plasma assisted atomic layer deposition (PAALD), using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia (NH3) as precursors. The growth rate of PAALD TaN at substrate temperature 250° was slightly higher than that of ALD TaN (0.80 Å/cycle for PAALD and 0.75 Å/cycle for ALD). Density of TaN films deposited by PAALD was as high as 11.0 g/cm3, considerably higher compared to the value of 8.3 g/cm3 obtained by ALD. The N: Ta ratio for ALD TaN was 44: 37 in composition and the film contained approximately 8∼10 atomic % carbon and 11 atomic % oxygen impurities. On the other hand, the ratio for PAALD TaN layers was 47: 44 and the respective carbon and oxygen contents of TaN layers decreased to 3 atomic % and 4 atomic %. The stability of 10 nm-thick TaN films as a Cu diffusion barrier was tested through thermal annealing for 30 minutes in N2 ambient and characterized by XRD, which proves the PAALD deposited TaN film to maintain better barrier properties against Cu below 800°.

Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes

2004 ◽  
Vol 19 (2) ◽  
pp. 447-453 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Kathleen Dunn ◽  
Eric T. Eisenbraun ◽  
Alain E. Kaloyeros
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Process Window ◽  
Copper Metallization ◽  
Oxygen Impurity ◽  
Gas Purge ◽  
Layer Deposition ◽  
Rate Versus

A metal–organic thermal atomic layer deposition (ALD) approach was developed for the growth of ultrathin tantalum nitride (TaNx) films by alternate pulses of tert-butylimido trisdiethylamido tantalum (TBTDET) and ammonia (NH3). An optimized ALD process window was established by investigating saturation of film-growth rate versus TBTDET and NH3 exposures, as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (250 °C) ALD process yielded uniform, continuous, and conformal TaNx films with a Ta:N ratio of 1:1. Carbon and oxygen impurity levels were in the 5–8 at.% range. Associated film conformality in 100-nm trench structures with 11:1 aspect ratio was nearly 100%.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition

2018 ◽  
Vol 36 (2) ◽  
pp. 021515 ◽  
Author(s):  
Shinya Iwashita ◽  
Tsuyoshi Moriya ◽  
Takamichi Kikuchi ◽  
Munehito Kagaya ◽  
Naotaka Noro ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Film Properties ◽  
Layer Deposition ◽  
Ion Energies ◽  
Titanium Dioxides
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