Characteristics of Three-Dimensional Simulation and Design of Fin Field Effect Transistors with 37∼18 nm Channel Length

2011 ◽  
Vol 8 (10) ◽  
pp. 2100-2107
Author(s):  
Bor-Wen Liou
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Channel Length ◽  
Dimensional Simulation

Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors

2007 ◽  
Vol 177 (9) ◽  
pp. 683-688 ◽  
Author(s):  
P.-Y. Chen ◽  
Y.-L. Shao ◽  
K.-W. Cheng ◽  
K.-H. Hsu ◽  
J.-S. Wu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Simulation Studies ◽  
Dimensional Simulation

Three-Dimensional Simulation Study of the Improved On/Off Current Ratio in Silicon Nanowire Field-Effect Transistors

2008 ◽  
Vol 53 (3) ◽  
pp. 1680-1684
Author(s):  
Chang-Yong Choi ◽  
Won-Ju Cho ◽  
Sang-Mo Koo ◽  
Sangsig Kim ◽  
Qiliang Li ◽  
...  
Keyword(s):  
Simulation Study ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Three Dimensional ◽  
Current Ratio ◽  
Dimensional Simulation

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Three dimensional band-filling control of complex oxides triggered by interfacial electron transfer

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Meng Meng ◽  
Yuanwei Sun ◽  
Yuehui Li ◽  
Qichang An ◽  
Zhenzhen Wang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Field Effect ◽  
Essential Role ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Complex Oxides ◽  
Band Filling ◽  
Local Lattice ◽  
Oxygen Migration ◽  
Oxide Heterostructure

AbstractThe d-band-filling of transition metals in complex oxides plays an essential role in determining their structural, electronic and magnetic properties. Traditionally, at the oxide heterointerface, band-filling control has been achieved via electrostatic modification in the structure of field-effect transistors or electron transfer, which is limited to the quasi-two-dimension at the interface. Here we report a three-dimensional (3D) band-filling control by changing the local lattice coordination in a designed oxide heterostructure. At the LaCoO3/LaTiO3 heterointerface, due to the Fermi level mismatch, electrons transfer from LaTiO3 to LaCoO3. This triggers destabilisation of the CoO6 octahedrons, i.e. the formation of lattice configurations with a reduced Co valence. The associated oxygen migration results in the 3D topotactic phase transition of LaCoO3. Tuned by the thickness of LaTiO3, different crystalline phases and band-fillings of Co occur, leading to the emergence of different magnetic ground states.

Sign in / Sign up

Export Citation Format

Share Document