Three-Dimensional Simulation of Random-Dopant-Induced Threshold Voltage Fluctuation in Nanoscale Fin-Typed Field Effect Transistors

2007 ◽  
Author(s):  
Yiming Li ◽  
Chih-Hong Hwang ◽  
Shao-Ming Yu ◽  
Hsuan-Ming Huang
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Voltage Fluctuation ◽  
Dimensional Simulation ◽  
Random Dopant

Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position

2012 ◽  
Vol 101 (1) ◽  
pp. 013503 ◽  
Author(s):  
Masahiro Hori ◽  
Keigo Taira ◽  
Akira Komatsubara ◽  
Kuninori Kumagai ◽  
Yukinori Ono ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Voltage Fluctuation

Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors

2007 ◽  
Vol 177 (9) ◽  
pp. 683-688 ◽  
Author(s):  
P.-Y. Chen ◽  
Y.-L. Shao ◽  
K.-W. Cheng ◽  
K.-H. Hsu ◽  
J.-S. Wu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Simulation Studies ◽  
Dimensional Simulation
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