Simultaneous Effects of Magnetic Field and Electric Field Induced Donor Binding Energies of a Hydrogenic Impurity in a Corrugated Quantum Well

2011 ◽  
Vol 8 (2) ◽  
pp. 210-215 ◽  
Author(s):  
A. Vanitha ◽  
A. John Peter ◽  
Changkyoo Yoo
Keyword(s):  
Magnetic Field ◽  
Electric Field ◽  
Quantum Well ◽  
Binding Energies ◽  
Hydrogenic Impurity

Binding Energies of Excitons in Square Quantum-Well Wires in the Presence of a Magnetic Field

2004 ◽  
Vol 21 (1) ◽  
pp. 166-169 ◽  
Author(s):  
Zhang Ying-Tao ◽  
Di Bing ◽  
Xie Zun ◽  
Li You-Cheng
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Binding Energies ◽  
Quantum Well Wires

First-excited-state energy of hydrogenic impurity bound polaron in an anisotropic quantum dot in an electric field

2019 ◽  
Vol 33 (32) ◽  
pp. 1950386
Author(s):  
Shi-Hua Chen
Keyword(s):  
Excited State ◽  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Binding Energies ◽  
Hydrogenic Impurity ◽  
Bound Polaron ◽  
First Excited State ◽  
Trial Wavefunction ◽  
Anisotropic Quantum Dot

The first-excited-state (ES) binding energy of hydrogenic impurity bound polaron in an anisotropic quantum dot (QD) is obtained by constructing a variational wavefunction under the action of a uniform external electric field. As for a comparison, the ground-state (GS) binding energy of the system is also included. We apply numerical calculations to KBr QD with stronger electron–phonon (E–P) interaction in which the new variational wavefunction is adopted. We analyzed specifically the effects of electric field and the effects of both the position of the impurity and confinement lengths in the xy-plane and the [Formula: see text] direction on the ground and the first-ES binding energies (BEs). The results show that the selected trial wavefunction in the ES is appropriate and effective for the current research system.

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

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