Effect of subband mixing on the energy levels of a hydrogenic impurity in a GaAs/Ga1−xAlxAs double quantum well in a magnetic field

1992 ◽  
Vol 45 (19) ◽  
pp. 11166-11172 ◽  
Author(s):  
N. Nguyen ◽  
R. Ranganathan ◽  
B. D. McCombe ◽  
M. L. Rustgi
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Energy Levels ◽  
Double Quantum ◽  
Hydrogenic Impurity ◽  
Double Quantum Well

Thermopower of a double quantum well in a parallel magnetic field

2004 ◽  
Vol 70 (15) ◽  
Author(s):  
R. Fletcher ◽  
T. Smith ◽  
M. Tsaousidou ◽  
P. T. Coleridge ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Double Quantum ◽  
Parallel Magnetic Field ◽  
Double Quantum Well

Doping-Dependent Nonlinear Electron Mobility in GaAs|In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As Coupled Quantum-Well Pseudo-Morphic MODFET Structure

2020 ◽  
Vol 54 (7) ◽  
pp. 676
Author(s):  
S.R. Panda ◽  
A. Sahu ◽  
S. Das ◽  
A.K. Panda ◽  
T. Sahu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Levels ◽  
Interface Roughness ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Alloy Disorder

We analyze the asymmetric delta-doping dependence of nonlinear electron mobility μ of GaAs|InxGa1-xAs double quantum-well pseudo-morphic modulation doped field-effect transistor structure. We solve the Schrodinger and Poisson's equations self-consistently to obtain the sub-band energy levels and wave functions. We consider scatterings due to the ionized impurities (IMP), alloy disorder (AL), and interface roughness (IR) to calculate μ for a system having double sub-band occupancy, in which the inter-sub-band effects play an important role. Considering the doping concentrations in the barriers towards the substrate and surface sides as Nd1 and Nd2, respectively, we show that variation of Nd1 leads to a dip in μ near Nd1=Nd2, at which the resonance of the sub-band states occurs. A similar dip in μ as a function of Nd1 is also obtained at Nd1=Nd2 by keeping (Nd1+Nd2) unchanged. By increasing the central barrier width and well width, the dip in μ becomes sharp. We note that even though the overall μ is governed by the IMP- and AL-scatterings, the dip in μ is mostly affected through substantial variation of the sub-band mobilities due to IR-scattering near the resonance. Our results of nonlinear electron mobility near the resonance of sub-band states can be utilized for the performance analysis of GaAs|InGaAs pseudo-morphic quantum-well field-effect transistors. Keywords: asymmetric double quantum wells, GaAs|InxGa1-xAs structures, nonlinear electron mobility, pseudo-morphic HEMT structures, resonance of sub-band states.

Magnetic field dependence of the exciton transfer in semimagnetic double quantum well structures

1994 ◽  
Vol 138 (1-4) ◽  
pp. 889-894 ◽  
Author(s):  
Th. Pier ◽  
K. Hieke ◽  
B. Henninger ◽  
W. Heimbrodt ◽  
O. Goede ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Double Quantum ◽  
Quantum Well Structures ◽  
Exciton Transfer ◽  
Double Quantum Well

scholarly journals Canted Antiferromagnetic Phase in a Double Quantum Well in a Tilted Quantizing Magnetic Field

2000 ◽  
Vol 84 (4) ◽  
pp. 725-728 ◽  
Author(s):  
V. S. Khrapai ◽  
E. V. Deviatov ◽  
A. A. Shashkin ◽  
V. T. Dolgopolov ◽  
F. Hastreiter ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Double Quantum ◽  
Antiferromagnetic Phase ◽  
Double Quantum Well ◽  
Quantizing Magnetic Field

Terahertz absorption in a double quantum well system under a magnetic field

1998 ◽  
Vol 2 (1-4) ◽  
pp. 799-803
Author(s):  
C. Zhang ◽  
W. Xu ◽  
F. Gao ◽  
K.A. Chao ◽  
Y. Takahashi
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Terahertz Absorption
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