Size-Dependent Exciton Energy of Narrow Band Gap Colloidal Quantum Dots in the Finite Depth Square-Well Effective Mass Approximation

2006 ◽  
Vol 3 (2) ◽  
pp. 269-271 ◽  
Author(s):  
Sotirios Baskoutas ◽  
Andreas F. Terzis ◽  
Wolfram Schommers
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Effective Mass ◽  
Narrow Band ◽  
Finite Depth ◽  
Effective Mass Approximation ◽  
Exciton Energy ◽  
Size Dependent ◽  
Mass Approximation ◽  
Square Well

Using the potential morphing method within the finite depth square-well effective mass approximation, we calculate the exciton energy of narrow band gap colloidal PbS, PbSe, and InAs quantum dots, assuming a size dependent dielectric function. Concerning the behaviour of the effective band gap with the quantum dot radius, our theoretical results agree well with the experimental ones, in contrast with other theoretical models.

scholarly journals Sensing application of an optical fiber dip coated with L-Cystein ethyl ester hydrochloride capped ZnTe quantum dots

2016 ◽  
Vol 34 (3) ◽  
pp. 665-668 ◽  
Author(s):  
Madhulita Sundaray ◽  
Chapala Das ◽  
Sukanta Kumar Tripathy
Keyword(s):  
Quantum Dots ◽  
Optical Fiber ◽  
Effective Mass ◽  
Ethyl Ester ◽  
Effective Mass Approximation ◽  
Ester Hydrochloride ◽  
Bottom Up ◽  
Mass Approximation ◽  
Simple Chemical ◽  
Sensing Application

AbstractOptical fiber in conjunction with ZnTe quantum dots (QDs) is investigated for sensing application. ZnTe QDs, are synthesized by a simple chemical bottom up approach. Quantum dots are capped with L-Cystein ethyl ester hydrochloride (LEEH), to increase their stability. Then LEEH capped ZnTe QDs, whose size is estimated as 2.29 nm by effective mass approximation (EMA), are dip-coated on a cladding removed optical fiber. Different concentrations of alcohol and ammonia are used to investigate the sensing behavior. It is found that sensitivity of the sensor increases with the use of QDs for both alcohol and ammonia.

Carrier Concentrations in Degenerate Semiconductors Having Band Gap Narrowing

2008 ◽  
Vol 63 (3-4) ◽  
pp. 193-198 ◽  
Author(s):  
Atanu Das ◽  
Arif Khan
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Effective Mass ◽  
Density Of States ◽  
Electrical Transport ◽  
Effective Mass Approximation ◽  
Degenerate Semiconductors ◽  
Mass Approximation ◽  
Heavily Doped ◽  
Band Gap Narrowing

The density-of-states effective mass approximation and the conduction-band effective mass approximation are employed to formulate carrier concentrations and the diffusivity-mobility relationship (DMR) for heavily doped n-semiconductors exhibiting band gap narrowing. These are very suitable for the investigation of electrical transport also in heavily doped p-semiconductors. Numerical calculations indicate that the DMR depends on a host of parameters including the temperature, carrier degeneracy, and the non-parabolicity of the band structure.

Effective mass approximation for two extreme semiconductors: Band gap of PbS and CuBr nanoparticles

2004 ◽  
Vol 95 (9) ◽  
pp. 5035-5041 ◽  
Author(s):  
K. K. Nanda ◽  
F. E. Kruis ◽  
H. Fissan ◽  
S. N. Behera
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Effective Mass Approximation ◽  
Mass Approximation
Sign in / Sign up

Export Citation Format

Share Document