Effective mass approximation for two extreme semiconductors: Band gap of PbS and CuBr nanoparticles

2004 ◽  
Vol 95 (9) ◽  
pp. 5035-5041 ◽  
Author(s):  
K. K. Nanda ◽  
F. E. Kruis ◽  
H. Fissan ◽  
S. N. Behera
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Effective Mass Approximation ◽  
Mass Approximation

Size-Dependent Exciton Energy of Narrow Band Gap Colloidal Quantum Dots in the Finite Depth Square-Well Effective Mass Approximation

2006 ◽  
Vol 3 (2) ◽  
pp. 269-271 ◽  
Author(s):  
Sotirios Baskoutas ◽  
Andreas F. Terzis ◽  
Wolfram Schommers
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Effective Mass ◽  
Narrow Band ◽  
Finite Depth ◽  
Effective Mass Approximation ◽  
Exciton Energy ◽  
Size Dependent ◽  
Mass Approximation ◽  
Square Well

Using the potential morphing method within the finite depth square-well effective mass approximation, we calculate the exciton energy of narrow band gap colloidal PbS, PbSe, and InAs quantum dots, assuming a size dependent dielectric function. Concerning the behaviour of the effective band gap with the quantum dot radius, our theoretical results agree well with the experimental ones, in contrast with other theoretical models.

Carrier Concentrations in Degenerate Semiconductors Having Band Gap Narrowing

2008 ◽  
Vol 63 (3-4) ◽  
pp. 193-198 ◽  
Author(s):  
Atanu Das ◽  
Arif Khan
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Effective Mass ◽  
Density Of States ◽  
Electrical Transport ◽  
Effective Mass Approximation ◽  
Degenerate Semiconductors ◽  
Mass Approximation ◽  
Heavily Doped ◽  
Band Gap Narrowing

The density-of-states effective mass approximation and the conduction-band effective mass approximation are employed to formulate carrier concentrations and the diffusivity-mobility relationship (DMR) for heavily doped n-semiconductors exhibiting band gap narrowing. These are very suitable for the investigation of electrical transport also in heavily doped p-semiconductors. Numerical calculations indicate that the DMR depends on a host of parameters including the temperature, carrier degeneracy, and the non-parabolicity of the band structure.

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