Electronic Properties of Exciton in Mg Based II–VI Wide Band Gap Semiconducting Quantum Dots

2017 ◽  
Vol 6 (1) ◽  
pp. 126-132
Author(s):  
M. Asokan ◽  
A. John Peter
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Electronic Properties ◽  
Wide Band ◽  
Optical Data Storage ◽  
Binding Energies ◽  
Mg Alloy ◽  
Optical Data ◽  
Wide Band Gap ◽  
Alloy Content

Electronic properties of exciton in Mg based ZnS, ZnSe and ZnTe wide band gap semiconductor cylindrical quantum dots are investigated taking into consideration of geometrical confinement effect. The confinement potentials for various concentrations of Mg alloy content in Zn1–xMgxS/MgS, Zn1–xMgxSe/MgSe and Zn1–xMgxTe/MgTe quantum dots are studied and the constant barrier height is maintained for the Mg content in all the three heterostructures (Zn0.9Mg0.1S/MgS, Zn0.25Mg0.75Se/MgSe and Zn0.09Mg0.91Te/MgTe) to obtain the exciton binding energies and the optical transition energies. The results show that the band gap increases nonlinearly with the increase of composition of Mg alloy content in the taken materials due to the positive band gap bowing parameters and the exciton binding energies in Zn0.9Mg0.1S/MgS quantum dot are found to be more than the other two dots taken for studies. Our results will be helpful for some potential applications in full colour display devices and optical data storage devices.

UNIFORM BENDING EFFECT ON ELECTRONIC PROPERTIES OF BORON NITRIDE NANORIBBONS: A COMPUTATIONAL INVESTIGATION

Nano LIFE ◽  
2012 ◽  
Vol 02 (02) ◽  
pp. 1240005
Author(s):  
YUNLONG LIAO ◽  
ZHONGFANG CHEN
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Wide Band ◽  
Band Gaps ◽  
Computational Investigation ◽  
Wide Band Gap ◽  
Bending Effect ◽  
Boron Nitride Nanoribbons

First-principles computations were performed to investigate the uniform bending effect on the electronic properties of armchair boron nitride nanoribbons (aBNNRs) with experimentally obtained width. For both bare and hydrogen-terminated aBNNRs, the band gaps only slightly depend on the uniform bending. The insensitivity of the band structures of BNNRs to the uniform bending makes them ideal materials when their wide band gap character is desired.

scholarly journals Ultra-small (r1 year) copper oxide quantum dots with wide band gap

2018 ◽  
Vol 113 ◽  
pp. 600-607 ◽  
Author(s):  
Bhusankar Talluri ◽  
Edamana Prasad ◽  
Tiju Thomas
Keyword(s):  
Quantum Dots ◽  
Copper Oxide ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap

First principles study of defects in solid electrolyte lithium thiophosphate Li7P3S11

2011 ◽  
Vol 1331 ◽  
Author(s):  
Ka Xiong ◽  
Weichao Wang ◽  
Roberto Longo Pazos ◽  
Kyeongjae Cho
Keyword(s):  
Electronic Structure ◽  
Solid Electrolyte ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Wide Band ◽  
Ion Conductivity ◽  
First Principles Calculations ◽  
Wide Band Gap ◽  
Formation Energies

ABSTRACTWe investigate the electronic structure of interstitial Li and Li vacancy in Li7P3S11 by first principles calculations. We find that Li7P3S11 is a good insulator with a wide band gap of 3.5 eV. We find that the Li vacancy and interstitial Li+ ion do not introduce states in the band gap hence they do not deteriorate the electronic properties of Li7P3S11. The calculated formation energies of Li vacancies are much larger than those of Li interstitials, indicating that the ion conductivity may arise from the migration of interstitial Li.

Study of the electronic properties of wide band gap CIGSe solar cells: Influence of copper off-stoichiometry

2012 ◽  
Vol 358 (17) ◽  
pp. 2428-2430 ◽  
Author(s):  
A. Darga ◽  
W. Favre ◽  
Morgane Fruzzetti ◽  
J.-P. Kleider ◽  
B. Morel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Electronic Properties ◽  
Wide Band ◽  
Wide Band Gap

Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys

1993 ◽  
Vol 2 (5-7) ◽  
pp. 773-777 ◽  
Author(s):  
G. De Cesare ◽  
F. Galluzzi ◽  
G. Guattari ◽  
G. Leo ◽  
R. Vincenzoni ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Amorphous Carbon ◽  
Wide Band ◽  
Wide Band Gap ◽  
Silicon Alloys ◽  
Optical And Electronic Properties

Structural and electronic properties of wide band gap Zn1−xMgxSe alloys

2004 ◽  
Vol 95 (8) ◽  
pp. 4184-4192 ◽  
Author(s):  
E. Pelucchi ◽  
S. Rubini ◽  
B. Bonanni ◽  
A. Franciosi ◽  
A. Zaoui ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Wide Band ◽  
Wide Band Gap ◽  
Structural And Electronic Properties
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