scholarly journals Electronic properties of layered multicomponent wide-band-gap oxides: A combinatorial approach

2012 ◽  
Vol 85 (15) ◽  
Author(s):  
Altynbek Murat ◽  
Julia E. Medvedeva
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Wide Band ◽  
Combinatorial Approach ◽  
Wide Band Gap

UNIFORM BENDING EFFECT ON ELECTRONIC PROPERTIES OF BORON NITRIDE NANORIBBONS: A COMPUTATIONAL INVESTIGATION

Nano LIFE ◽  
2012 ◽  
Vol 02 (02) ◽  
pp. 1240005
Author(s):  
YUNLONG LIAO ◽  
ZHONGFANG CHEN
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Wide Band ◽  
Band Gaps ◽  
Computational Investigation ◽  
Wide Band Gap ◽  
Bending Effect ◽  
Boron Nitride Nanoribbons

First-principles computations were performed to investigate the uniform bending effect on the electronic properties of armchair boron nitride nanoribbons (aBNNRs) with experimentally obtained width. For both bare and hydrogen-terminated aBNNRs, the band gaps only slightly depend on the uniform bending. The insensitivity of the band structures of BNNRs to the uniform bending makes them ideal materials when their wide band gap character is desired.

First principles study of defects in solid electrolyte lithium thiophosphate Li7P3S11

2011 ◽  
Vol 1331 ◽  
Author(s):  
Ka Xiong ◽  
Weichao Wang ◽  
Roberto Longo Pazos ◽  
Kyeongjae Cho
Keyword(s):  
Electronic Structure ◽  
Solid Electrolyte ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Wide Band ◽  
Ion Conductivity ◽  
First Principles Calculations ◽  
Wide Band Gap ◽  
Formation Energies

ABSTRACTWe investigate the electronic structure of interstitial Li and Li vacancy in Li7P3S11 by first principles calculations. We find that Li7P3S11 is a good insulator with a wide band gap of 3.5 eV. We find that the Li vacancy and interstitial Li+ ion do not introduce states in the band gap hence they do not deteriorate the electronic properties of Li7P3S11. The calculated formation energies of Li vacancies are much larger than those of Li interstitials, indicating that the ion conductivity may arise from the migration of interstitial Li.

Study of the electronic properties of wide band gap CIGSe solar cells: Influence of copper off-stoichiometry

2012 ◽  
Vol 358 (17) ◽  
pp. 2428-2430 ◽  
Author(s):  
A. Darga ◽  
W. Favre ◽  
Morgane Fruzzetti ◽  
J.-P. Kleider ◽  
B. Morel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Electronic Properties ◽  
Wide Band ◽  
Wide Band Gap

Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys

1993 ◽  
Vol 2 (5-7) ◽  
pp. 773-777 ◽  
Author(s):  
G. De Cesare ◽  
F. Galluzzi ◽  
G. Guattari ◽  
G. Leo ◽  
R. Vincenzoni ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Amorphous Carbon ◽  
Wide Band ◽  
Wide Band Gap ◽  
Silicon Alloys ◽  
Optical And Electronic Properties

Structural and electronic properties of wide band gap Zn1−xMgxSe alloys

2004 ◽  
Vol 95 (8) ◽  
pp. 4184-4192 ◽  
Author(s):  
E. Pelucchi ◽  
S. Rubini ◽  
B. Bonanni ◽  
A. Franciosi ◽  
A. Zaoui ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Wide Band ◽  
Wide Band Gap ◽  
Structural And Electronic Properties

scholarly journals The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface

RSC Advances ◽  
2019 ◽  
Vol 9 (15) ◽  
pp. 8435-8443 ◽  
Author(s):  
Dehe Zhao ◽  
Wei Gao ◽  
Yujing Li ◽  
Yuyuan Zhang ◽  
Hong Yin
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Electronic Properties ◽  
Functional Properties ◽  
Cubic Boron Nitride ◽  
Electronic States ◽  
Wide Band ◽  
Hybrid Structures ◽  
Wide Band Gap

Clarifying the electronic states and structures of the c-BN/diamond interface is of extreme importance for bundling these two different wide-band gap materials in order to synthesize hybrid structures with new functional properties.

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