Room Temperature Methane (CH4) Sensing by Vanadium Oxide (VOx) Nanoparticles

2016 ◽  
Vol 22 (4) ◽  
pp. 901-904 ◽  
Author(s):  
A. A Akande ◽  
K. E Rammutla ◽  
B. P Dhonge ◽  
A. G. J Machatine ◽  
B. W Mwakikunga
Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 317 ◽  
Author(s):  
Haihong Yin ◽  
Changqing Song ◽  
Zhiliang Wang ◽  
Haibao Shao ◽  
Yi Li ◽  
...  

VO2(B), VO2(M), and V2O5 are the most famous compounds in the vanadium oxide family. Here, their gas-sensing properties were investigated and compared. VO2(B) nanoflakes were first self-assembled via a hydrothermal method, and then VO2(M) and V2O5 nanoflakes were obtained after a heat-phase transformation in nitrogen and air, respectively. Their microstructures were evaluated using X-ray diffraction and scanning and transmission electron microscopies, respectively. Gas sensing measurements indicated that VO2(M) nanoflakes were gas-insensitive, while both VO2(B) and V2O5 nanoflakes were highly selective to ammonia at room temperature. As ammonia sensors, both VO2(B) and V2O5 nanoflakes showed abnormal p-type sensing characteristics, although vanadium oxides are generally considered as n-type semiconductors. Moreover, V2O5 nanoflakes exhibited superior ammonia sensing performance compared to VO2(B) nanoflakes, with one order of magnitude higher sensitivity, a shorter response time of 14–22 s, and a shorter recovery time of 14–20 s. These characteristics showed the excellent potential of V2O5 nanostructures as ammonia sensors.


2014 ◽  
Vol 1053 ◽  
pp. 332-336 ◽  
Author(s):  
Ya Qiao ◽  
Yuan Lu ◽  
Hua Yang ◽  
Yong Shun Ling

Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO2thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V2O3, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO2, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.


2004 ◽  
Vol 848 ◽  
Author(s):  
Olivier Durupthy ◽  
Saïd Es-salhi ◽  
Nathalie Steunou ◽  
Thibaud Coradin ◽  
Jacques Livage

ABSTRACTVarious cations (Li+, Na+, K+, NH4+, Cs+, Mg2+, Ca2+, Ba2+) were introduced during the formation of a V2O5. nH2O gel. Cation intercalated Xy V2O5. nH2O (y = 0.3 for X = Li+, Na+, K+, NH4+ or y = 0.15 for Mg2+, Ca2+, Ba2+) were first obtained at room temperature but some of them evolve upon ageing into a new phase: XV3O8. nH2O for X = Na+, K+, NH4+ and Cs+ or XV6O16. nH2O for X = Mg2+, Ca2+, Ba2+. All the vanadium oxide phases were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and infrared spectroscopy (IR); the supernatant solutions were analysed by 51V NMR spectroscopy. These vanadium oxide phases exhibit a layered structure with cations and water molecules intercalated within the interlayer space. The formation of the different phases depends mainly on the pH of the supernatant solution and on the nature of the cation.


ChemInform ◽  
2013 ◽  
Vol 44 (49) ◽  
pp. no-no
Author(s):  
Liangfei Bai ◽  
Yan Xue ◽  
Jiajia Zhang ◽  
Bicai Pan ◽  
Changzheng Wu

2019 ◽  
Vol 294 ◽  
pp. 17-24 ◽  
Author(s):  
Shrouk E. Zaki ◽  
Mohamed A. Basyooni ◽  
Mohamed Shaban ◽  
Mohamed Rabia ◽  
Yasin Ramazan Eker ◽  
...  

1999 ◽  
Vol 38 (25) ◽  
pp. 5709-5715 ◽  
Author(s):  
R. C. Bell ◽  
A. W. Castleman ◽  
D. L. Thorn

Sensors ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 1320 ◽  
Author(s):  
Mohamed Abdel-Rahman ◽  
Muhammad Zia ◽  
Mohammad Alduraibi

In this study, vanadium oxide (VxOy) semiconducting resistive thermometer thin films were developed, and their temperature-dependent resistive behavior was examined. Multilayers of 5-nm-thick vanadium pentoxide (V2O5) and 5-nm-thick vanadium (V) films were alternately sputter-deposited, at room temperature, to form 105-nm-thick VxOy films, which were post-deposition annealed at 300 °C in O2 and N2 atmospheres for 30 and 40 min. The synthesized VxOy thin films were then patterned into resistive thermometer structures, and their resistance versus temperature (R-T) characteristics were measured. Samples annealed in O2 achieved temperature coefficients of resistance (TCRs) of −3.0036 and −2.4964%/K at resistivity values of 0.01477 and 0.00819 Ω·cm, respectively. Samples annealed in N2 achieved TCRs of −3.18 and −1.1181%/K at resistivity values of 0.04718 and 0.002527 Ω·cm, respectively. The developed thermometer thin films had TCR/resistivity properties suitable for microbolometer and antenna-coupled microbolometer applications. The employed multilayer synthesis technique was shown to be effective in tuning the TCR/resistivity properties of the thin films by varying the annealing conditions.


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