Vanadium Oxide Complexes in Room-Temperature Chloroaluminate Molten Salts

1999 ◽  
Vol 38 (25) ◽  
pp. 5709-5715 ◽  
Author(s):  
R. C. Bell ◽  
A. W. Castleman ◽  
D. L. Thorn
2000 ◽  
Vol 29 (8) ◽  
pp. 922-923 ◽  
Author(s):  
Hajime Matsumoto ◽  
Masahiro Yanagida ◽  
Kazumi Tanimoto ◽  
Masakatsu Nomura ◽  
Yukiko Kitagawa ◽  
...  

ChemInform ◽  
2010 ◽  
Vol 28 (12) ◽  
pp. no-no
Author(s):  
K. XU ◽  
S. ZHANG ◽  
C. A. ANGELL

1990 ◽  
Vol 1990-17 (1) ◽  
pp. 661-670 ◽  
Author(s):  
Setsuko Takahashi

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 317 ◽  
Author(s):  
Haihong Yin ◽  
Changqing Song ◽  
Zhiliang Wang ◽  
Haibao Shao ◽  
Yi Li ◽  
...  

VO2(B), VO2(M), and V2O5 are the most famous compounds in the vanadium oxide family. Here, their gas-sensing properties were investigated and compared. VO2(B) nanoflakes were first self-assembled via a hydrothermal method, and then VO2(M) and V2O5 nanoflakes were obtained after a heat-phase transformation in nitrogen and air, respectively. Their microstructures were evaluated using X-ray diffraction and scanning and transmission electron microscopies, respectively. Gas sensing measurements indicated that VO2(M) nanoflakes were gas-insensitive, while both VO2(B) and V2O5 nanoflakes were highly selective to ammonia at room temperature. As ammonia sensors, both VO2(B) and V2O5 nanoflakes showed abnormal p-type sensing characteristics, although vanadium oxides are generally considered as n-type semiconductors. Moreover, V2O5 nanoflakes exhibited superior ammonia sensing performance compared to VO2(B) nanoflakes, with one order of magnitude higher sensitivity, a shorter response time of 14–22 s, and a shorter recovery time of 14–20 s. These characteristics showed the excellent potential of V2O5 nanostructures as ammonia sensors.


2014 ◽  
Vol 1053 ◽  
pp. 332-336 ◽  
Author(s):  
Ya Qiao ◽  
Yuan Lu ◽  
Hua Yang ◽  
Yong Shun Ling

Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO2thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V2O3, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO2, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.


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