Thermal Stress and Intrinsic Stress in Nanocrystalline Diamond Film Prepared by Hot Filament Chemical Vapor Deposition

2012 ◽  
Vol 5 (2) ◽  
pp. 648-652
Author(s):  
Xu Feng ◽  
Zuo Dun-Wen ◽  
Lu Wen-Zhuang ◽  
Wang Min
2012 ◽  
Vol 476-478 ◽  
pp. 2353-2356
Author(s):  
Wen Qi Dai ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Yi Feng Liu ◽  
Ke Tang ◽  
...  

Nanocrystalline diamond (NCD) films were synthesized by hot-filament chemical vapor deposition (HFCVD) method at different temperatures (600 °C, 620°C, 640°C and 660°C). The AFM and Raman analyses demonstrated that deposition temperature has a great effect on the surface roughness and quality of NCD films and 620°C is the temperature to grow NCD films with smooth surfaces.


1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.


1994 ◽  
Vol 363 ◽  
Author(s):  
Yan Chen ◽  
Jun Mei ◽  
Qijin Chen ◽  
Zhangda Lin

AbstractDiamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109–1011/cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxial growth of monocrystalline diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.


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