Intrinsic stress and its relaxation in diamond film deposited by hot filament chemical vapor deposition

1996 ◽  
Vol 14 (1) ◽  
pp. 165-169 ◽  
Author(s):  
S. K. Choi ◽  
D. Y. Jung ◽  
H. M. Choi
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Intrinsic Stress ◽  
Hot Filament

Examination of the material properties and performance of thin-diamond film cutting tool inserts produced by arc-jet and hot filament chemical vapor deposition

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Cutting Tool ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
And Performance ◽  
Hot Filament

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.

Achieving High Nucleation Density of Diamond Film Under Low Pressures in Hot-Filament Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
Yan Chen ◽  
Jun Mei ◽  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Heteroepitaxial Growth ◽  
Hot Filament ◽  
Low Pressures ◽  
Gaseous Source

AbstractDiamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109–1011/cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxial growth of monocrystalline diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.

Effect of Deposition Temperature on Surface Roughness of Nanocrystalline Diamond Film

2012 ◽  
Vol 476-478 ◽  
pp. 2353-2356
Author(s):  
Wen Qi Dai ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Yi Feng Liu ◽  
Ke Tang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Different Temperatures ◽  
Hot Filament

Nanocrystalline diamond (NCD) films were synthesized by hot-filament chemical vapor deposition (HFCVD) method at different temperatures (600 °C, 620°C, 640°C and 660°C). The AFM and Raman analyses demonstrated that deposition temperature has a great effect on the surface roughness and quality of NCD films and 620°C is the temperature to grow NCD films with smooth surfaces.

The deposition of oriented diamond film by hot-filament chemical vapor deposition with separate reactant gas

1999 ◽  
Vol 14 (8) ◽  
pp. 3196-3199 ◽  
Author(s):  
G. C. Chen ◽  
C. Sun ◽  
R. F. Huang ◽  
L. S. Wen ◽  
D. Y. Jiang ◽  
...  
Keyword(s):  
Temperature Field ◽  
Chemical Vapor Deposition ◽  
Temperature Gradient ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Deposition Time ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Degree Of Orientation ◽  
Hot Filament

A (110)-oriented diamond film was deposited by hot filament chemical vapor deposition with H2 and CH4 separately introduced into the reactive zone. The film with a degree of orientation I(220)/I(111) of more than 200% and deposition rate of 2–3 μm/h was obtained for a deposition time of 17 h. The long deposition time enlarged the grain size and enhanced the degree of orientation, but too long a deposition time resulted in random growth. The temperature field was measured and also calculated using a simple model. Both results showed that a temperature field existed with varied gradients along the normal of substrate surface. The (110)-oriented diamond film was deposited in the zone with negative temperature gradient. The change in orientation occurring for long deposition times was ascribed to the change of temperature gradient.

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