scholarly journals Leakage Immune 9T-SRAM Cell in Sub-threshold Region

10.11591/557 ◽  
2016 ◽  
Vol 5 (1) ◽  
Author(s):  
Priya Gupta ◽  
Anu Gupta ◽  
Abhijit Asati
Keyword(s):  
Threshold Region ◽  
Sram Cell

scholarly journals Leakage Immune 9T-SRAM Cell in Sub-threshold Region

2016 ◽  
Vol 5 (1) ◽  
Author(s):  
Priya Gupta ◽  
Anu Gupta ◽  
Abhijit Asati
Keyword(s):  
Threshold Region ◽  
Sram Cell

scholarly journals Leakage Immune 9T-SRAM Cell in Sub-threshold Region

2016 ◽  
Vol 5 (1) ◽  
Author(s):  
Priya Gupta ◽  
Anu Gupta ◽  
Abhijit Asati
Keyword(s):  
Threshold Region ◽  
Sram Cell

Design of Low Leakage 9T SRAM Cell with -Low Power Devices

2021 ◽  
pp. 2250027
Author(s):  
Harekrishna Kumar ◽  
V.K Tomar
Keyword(s):  
Low Power ◽  
Supply Voltage ◽  
Schmitt Trigger ◽  
Leakage Power ◽  
Access Time ◽  
Threshold Region ◽  
Large Area ◽  
Transmission Gate ◽  
Low Leakage ◽  
Sram Cell

In this paper, a 9T SRAM cell with low power (LP9T) and improved performance has been proposed. This cell is free from half-select issue and works with single-ended read and differential write operation in the sub-threshold region. To evaluate the relative performance, the obtained characteristics of LP9T SRAM cell are compared with other state-of-the-art designs at 45-nm technology node. The read and write power dissipation of LP9T SRAM cell is reduced by [Formula: see text] and [Formula: see text] as compared to Conv.6T SRAM cell. In proposed cell, leakage power is reduced by [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text] as compared to conventional 6T (Conv.6T), low power (LP8T), transmission gate 8T(TG8T), transmission gate 9T (TG9T), Schmitt trigger 9T (ST9T), and positive feedback control 10T (PFC10T) SRAM cells. This reduction in leakage power is attributed to stacking effect. LP9T SRAM cell also exhibits significant improvement in read/write access time as compared to all considered cells. Also, the read and write energy of proposed cell is lowest among all considered cells. The LP9T SRAM cell has [Formula: see text] and [Formula: see text] higher read and write stability as compared to Conv.6T SRAM cell. Proposed SRAM cell has the highest value of ON to OFF current ratio ([Formula: see text]) which signifies the highest bit-cell density among all considered cells. The LP9T SRAM cell occupies [Formula: see text] large area as compared to Conv.6T SRAM cell. The overall quality of SRAM cell is calculated through the electrical quality metric (EQM). It is observed that LP9T SRAM cell has the highest value of EQM in comparison to considered cells at 0.3[Formula: see text]V supply voltage.

scholarly journals Low voltage high speed 8T SRAM cell for ultra-low power applications

2018 ◽  
Vol 7 (3.29) ◽  
pp. 70
Author(s):  
A S. S. Trinadh Kumar ◽  
B V. V. Satyanarayana
Keyword(s):  
Low Power ◽  
High Speed ◽  
Low Voltage ◽  
Total Power ◽  
Portable Devices ◽  
Threshold Region ◽  
Ultra Low Power ◽  
Read Operation ◽  
Sram Cell ◽  
Total Power Consumption

The usage of portable devices increasing rapidly in the modern life has led us to focus our attention to increase the performance of the SRAM circuits, especially for low power applications. Basically in six-Transistor (6T) SRAM cell either read or write operation can be performed at a time whereas, in 7T SRAM cell using single ended write operation and single ended read operation both write and read operations will be accomplished simultaneously at a time respectively. When it comes to operate in sub threshold region, single ended read operation will be degraded severely and single ended write operation will be severely degraded in terms of write-ability at lower voltages. To encounter these complications, an eight transistor SRAM cell is proposed. It performs single ended read operation and single ended write operation together even at sub threshold region down to 0.1V with improved read-ability using read assist and improved dynamic write-ability which helps in reducing the consumption of power by attaining a lower data retention voltage point. To reduce the total power consumption in the circuits, two extra access transistors are used in 8T SRAM cell which also helps in reducing the overall delay.  

scholarly journals Stability analysis of Sub-threshold 6T SRAM cell at 45 nm for IoT application

2019 ◽  
Vol 8 (2) ◽  
pp. 2434-2438
Keyword(s):  
Stability Analysis ◽  
Low Power ◽  
Threshold Voltage ◽  
Supply Voltage ◽  
Stability Parameter ◽  
Threshold Region ◽  
Ultra Low Power ◽  
Noise Margin ◽  
Sram Cell ◽  
Power Application

In ultra-Low power application the supply volt- age in the circuit is as minimum as possible to correct perform the operation. Reducing the supply voltage below the threshold Voltage of transistor is known as sub threshold voltage that affects the delay as well as stability parameter of the Circuit. In this paper body biased technique is applied at standard 6T SRAM which improve the static Current Noise Margin(SINM) and Write trip Current by the factor of 4.15 times and 4.7 times respectively from the Conventional (conv) 6T SRAM. SINM defined the read stability whereas WTI are write ability Parameters of the circuit. In the Sub threshold region delay parameter of the circuit increased, but in this paper delay and power of the proposed circuit are going to be degrades 2.34 times and 4.39 times from the conv. 6T SRAM at different Process Corner i.e. the Performance of the device get increased. In this paper conventional (Conv.)6T and Proposed(PP) 6T both have same W/L ratio at supply voltage of 400mv

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