A data‐independent 9T SRAM cell with enhanced I
            ON
            /I
            OFF
            ratio and RBL voltage swing in near threshold and sub‐threshold region

Monica Gupta; Kirti Gupta; Neeta Pandey

doi:10.1002/cta.2951

A data‐independent 9T SRAM cell with enhanced I ON /I OFF ratio and RBL voltage swing in near threshold and sub‐threshold region

International Journal of Circuit Theory and Applications ◽

10.1002/cta.2951 ◽

2021 ◽

Vol 49 (4) ◽

pp. 953-969

Author(s):

Monica Gupta ◽

Kirti Gupta ◽

Neeta Pandey

Keyword(s):

Threshold Region ◽

Sram Cell ◽

Voltage Swing ◽

Near Threshold

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Excitation of the C3Piustate of N2by electron impact in the near-threshold region

Journal of Physics B Atomic Molecular and Optical Physics ◽

10.1088/0953-4075/27/3/021 ◽

1994 ◽

Vol 27 (3) ◽

pp. 573-581 ◽

Cited By ~ 46

Author(s):

M Zubek

Keyword(s):

Electron Impact ◽

Threshold Region ◽

Near Threshold

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A novel PVT‐variation ‐ tolerant Schmitt‐trigger‐based 12T SRAM cell with improved write ability and high I ON /I OFF ratio in sub‐threshold region

International Journal of Circuit Theory and Applications ◽

10.1002/cta.3134 ◽

2021 ◽

Author(s):

Monica Gupta ◽

Kirti Gupta ◽

Neeta Pandey

Keyword(s):

Schmitt Trigger ◽

Threshold Region ◽

Sram Cell ◽

Pvt Variation

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Relaxation effects in C1s photoionisation of CO: a high resolution photoelectron study in the near-threshold region

Journal of Electron Spectroscopy and Related Phenomena ◽

10.1016/0368-2048(95)02391-7 ◽

1995 ◽

Vol 75 ◽

pp. 97-108 ◽

Cited By ~ 86

Author(s):

H.M. Köppe ◽

A.L.D. Kilcoyne ◽

J. Feldhaus ◽

A.M. Bradshaw

Keyword(s):

High Resolution ◽

Threshold Region ◽

Relaxation Effects ◽

Photoelectron Study ◽

Near Threshold

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Three-body analysis of incoherent η-photoproduction on the deuteron in the near threshold region

Physics Letters B ◽

10.1016/s0370-2693(00)01062-5 ◽

2000 ◽

Vol 492 (1-2) ◽

pp. 32-38 ◽

Cited By ~ 13

Author(s):

A. Fix ◽

H. Arenhövel

Keyword(s):

Threshold Region ◽

Three Body ◽

Near Threshold

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The cross section for electron impact excitation of the E 3Σg+ state of N2 in the near-threshold region

Chemical Physics Letters ◽

10.1016/0009-2614(88)87487-6 ◽

1988 ◽

Vol 146 (6) ◽

pp. 496-500 ◽

Cited By ~ 6

Author(s):

Mariusz Zubek

Keyword(s):

Electron Impact ◽

Cross Section ◽

Impact Excitation ◽

Electron Impact Excitation ◽

Threshold Region ◽

The Cross ◽

Near Threshold

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One-Sided Schmitt-Trigger-Based 9T SRAM Cell for Near-Threshold Operation

IEEE Transactions on Circuits and Systems I Regular Papers ◽

10.1109/tcsi.2020.2964903 ◽

2020 ◽

Vol 67 (5) ◽

pp. 1551-1561 ◽

Cited By ~ 2

Author(s):

Keonhee Cho ◽

Juhyun Park ◽

Tae Woo Oh ◽

Seong-Ook Jung

Keyword(s):

Schmitt Trigger ◽

Sram Cell ◽

Near Threshold

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Energy and Delay Tradeoffs of Soft-Error Masking for 16-nm FinFET Logic Paths: Survey and Impact of Process Variation in the Near-Threshold Region

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2016.2587763 ◽

2017 ◽

Vol 64 (6) ◽

pp. 695-699 ◽

Cited By ~ 3

Author(s):

Faris S. Alghareb ◽

Rizwan A. Ashraf ◽

Ahmad Alzahrani ◽

Ronald F. DeMara

Keyword(s):

Process Variation ◽

Soft Error ◽

Threshold Region ◽

Error Masking ◽

Near Threshold

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Photodetachment of an electron from a negative ion in the near-threshold region. II. Pulses of radiation with smooth time envelopes

Journal of Physics B Atomic and Molecular Physics ◽

10.1088/0022-3700/16/19/022 ◽

1983 ◽

Vol 16 (19) ◽

pp. 3653-3666 ◽

Cited By ~ 19

Author(s):

M V Fedorov ◽

A V Kazakov

Keyword(s):

Negative Ion ◽

Threshold Region ◽

Region Ii ◽

Near Threshold

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The influence of a duplex microstructure in steels on fatigue crack growth in the near-threshold region

Metallurgical Transactions A ◽

10.1007/bf02643352 ◽

1982 ◽

Vol 13 (3) ◽

pp. 439-445 ◽

Cited By ~ 77

Author(s):

K. Minakawa ◽

Y. Matsuo ◽

A. J. McEVILY

Keyword(s):

Fatigue Crack ◽

Fatigue Crack Growth ◽

Crack Growth ◽

Threshold Region ◽

Duplex Microstructure ◽

Near Threshold

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Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology

IEEE Transactions on Very Large Scale Integration (VLSI) Systems ◽

10.1109/tvlsi.2014.2367234 ◽

2015 ◽

Vol 23 (11) ◽

pp. 2748-2752 ◽

Cited By ~ 13

Author(s):

Younghwi Yang ◽

Juhyun Park ◽

Seung Chul Song ◽

Joseph Wang ◽

Geoffrey Yeap ◽

...

Keyword(s):

Threshold Voltage ◽

Sram Cell ◽

Near Threshold

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