scholarly journals Reliability of LED's; Are the Accelerated Ageing Tests Reliable?

1982 ◽  
Vol 9 (4) ◽  
pp. 239-242 ◽  
Author(s):  
George Ferenczi
Keyword(s):  
Minority Carrier ◽  
Deep Level ◽  
Light Output ◽  
Life Time ◽  
Accelerated Ageing ◽  
Test Results ◽  
Current Dependence ◽  
Ageing Test ◽  
Carrier Life Time

The mechanisms, leading to light output degradation of LED's were studied using a number of different techniques e.g. deep level spectroscopy, electroluminescence, minority carrier life time measurements. Several processes were revealed having different temperature and stress current dependence. Using these data extrapolations based on accelerated ageing test results are reexamined.

On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs

2014 ◽  
Vol 778-780 ◽  
pp. 1034-1037 ◽  
Author(s):  
Muhammad Nawaz ◽  
Filippo Chimento
Keyword(s):  
Experimental Data ◽  
Carrier Mobility ◽  
Minority Carrier ◽  
Life Time ◽  
Diagnostic Study ◽  
Two Dimensional ◽  
Close Match ◽  
Increasing Temperature ◽  
Carrier Life Time ◽  
Drift Layer

This paper addresses the design diagnostic study of 4H-SiC based IGBTs using two dimensional numerical computer simulations. Using identical set of physical device parameters (doping, thicknesses), simulated structure was first calibrated with the experimental data. A minority carrier life time in the drift layer of 1.0 1.6 μs and contact resistivity of 0.5 - 1.0 x 10-4 Ω-cm2 produces a close match with the experimental device. A decay in the device transconductance and threshold voltage is observed with increasing temperature. The on-resistance first decays with temperature (i.e., increased in ionization level, and increase in minority carrier life time), stays nearly constant with further increase in the temperature (may be all carriers are now fully ionized and increase in carrier life time is compensated with decrease in the carrier mobility) and finally increases linearly with temperature (> 450 K) due to decrease in the carrier mobility. The design of buffer layer is investigated that shows lower on-state losses with thin high doped buffers. For the design of devices over 15 20 kV, the design of drift layer demands a doping of < 2.0 x 1014 cm-3 with epitaxial layer quality giving a carrier life time over 2.0 μs.

On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD

2013 ◽  
Vol 740-742 ◽  
pp. 1085-1088 ◽  
Author(s):  
Muhammad Nawaz ◽  
Filippo Chimento
Keyword(s):  
Temperature Dependence ◽  
Computer Aided Design ◽  
Carrier Mobility ◽  
Minority Carrier ◽  
Life Time ◽  
Bipolar Transistors ◽  
Design Tool ◽  
Physical Parameters ◽  
Aided Design ◽  
Carrier Life Time

This paper addresses and evaluates the temperature dependence performance of silicon carbide (4H-SiC) based insulated gate bipolar transistors (IGBTs) using two dimensional numerical computer aided design tool (i.e., Atlas TCAD from Silvaco). Using identical set of device physical parameters (doping, thicknesses), simulated structure was first caliberated with the experimental data. A minority carrier life time in the drift layer of 1.0 – 1.6 µs and contact resistivity of 0.5 - 1.0 x 10-4 Ω-cm2 produces a close match with the experimental device. A set of n type IGBT structures were then numerically simulated to extract the conduction losses for various blocking voltage classes. An on-resistance first decays with temperature (i.e., increased in ionization level, and increase in minority carrier life time), stays nearly constant with further increase in the temperature (may be all carriers are now fully ionized and increase in carrier life time is compensated with decrease in the carrier mobility) and finally increases linearly with temperature (>450 oC) due to decrease in the carrier mobility. Compared with Si based IGBTs, numerical simulation predicts lower VCEON and RON values for 4H-SiC based IGBTs for higher voltage classes and hence potential for achieving smaller conduction losses for SiC based IGBTs.

Effect of CZTSe BSF and minority carrier life time on the efficiency enhancement of CZTS kesterite solar cell

2018 ◽  
Vol 18 (6) ◽  
pp. 633-641 ◽  
Author(s):  
Yousaf Hameed Khattak ◽  
Faisal Baig ◽  
Hanae Toura ◽  
Shafi Ullah ◽  
Bernabé Marí ◽  
...  
Keyword(s):  
Solar Cell ◽  
Minority Carrier ◽  
Life Time ◽  
Efficiency Enhancement ◽  
Carrier Life Time

Improvement of minority carrier life time in N-type monocrystalline Si by the Czochralski method

2016 ◽  
Vol 12 (4) ◽  
pp. 426-430 ◽  
Author(s):  
Sungsun Baik ◽  
Ilsun Pang ◽  
Jaemin Kim ◽  
Kwanghun Kim
Keyword(s):  
Minority Carrier ◽  
Life Time ◽  
Czochralski Method ◽  
Carrier Life Time
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