scholarly journals Effects of Refiring Processes on Electrical and Structural Properties of Thick-Film Resistors

1980 ◽  
Vol 6 (3-4) ◽  
pp. 165-171 ◽  
Author(s):  
A. Cattaneo ◽  
M. Prudenziati
Keyword(s):  
Electrical Properties ◽  
Thick Film ◽  
Structural Properties ◽  
Microprobe Analysis ◽  
Electrical Characteristics ◽  
Glass Crystallization ◽  
X Ray Diffraction ◽  
Sheet Resistivity ◽  
Chemical Modifications ◽  
X Ray

in order to analyze the influence of the refiring processes in thick film resistors, electrical and structural properties of resistors, refired up to ten times, through the original profile, were compared.The apparent sheet resistivity and TCR were measured as a function of the number of the firing cycles, and these electrical characteristics analyzed in connection with observations of structural and chemical modifications evidenced through X-ray diffraction, SEM inspection and microprobe analysis.Marked effects were observed, such as segregation of the conductive grains in the resistor thickness, chemical reactions of glass-modifiers with glass, crystallization of new phases, together with substrate/thick-film interactions.It is found that in some cases (e.g. for DP 1400 resistor series) the phenomena induced by refiring are few and simple enough for us to interprete the corresponding electrical modifications, while in other systems the presence of many competitive chemicophysical effects inhibit their unambiguous correlation with the electrical properties of these resistors.

scholarly journals Influence of the Metal Migration From Screen-and-Fired Terminations on the Electrical Characteristics of Thick-Film Resistors

1977 ◽  
Vol 4 (3-4) ◽  
pp. 205-211 ◽  
Author(s):  
A. Cattaneo ◽  
M. Cocito ◽  
F. Forlani ◽  
M. Prudenziati
Keyword(s):  
Thick Film ◽  
Microprobe Analysis ◽  
Electron Microprobe Analysis ◽  
Diffusion Processes ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Conduction Model ◽  
X Ray ◽  
Aspect Ratios ◽  
Metal Migration

The electrical characteristics of ruthenium-based thick-film resistors with different conductive terminations (PtAu and Ag based compositions) and with different aspect ratios were examined. The purpose is to understand the effects of resistivity decrease and TCR variation caused by the migration of metal particles from the terminations into the resistor film.The majority of the data were collected by using silver-based terminations since Ag diffusion processes, and then the relevant electrical effects, are emphasized.Scanning electron microscopy, electron microprobe analysis and X-ray diffraction analysis have been used to analyze the diffusion processes and the thick-film microstructures. It is shown that the experimental data is simply explained by a conduction model which assumes percolative tunneling of electrons through conductive grains embedded in the glass matrix of the resistors. Using simple hypotheses the model theory gives a good quantitative fit of the experimental results.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

High-performance electrical properties of La-based perovskite ceramics for the functional phase of thick film resistors

2020 ◽  
Author(s):  
Yongcheng Lu ◽  
Yuanxun Li ◽  
Daming Chen ◽  
Rui Peng ◽  
Qinghui Yang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Properties ◽  
Thick Film ◽  
High Performance ◽  
Composite Ceramics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alternative Material ◽  
Perovskite Ceramics ◽  
Scanning Electron

Abstract In order to explore an economical functional phase alternative material for thick film resistors, the crystal structure, microstructure, and electrical properties of (1-x)LSCN + xLCNZ (x = 0.0–1.0) composite ceramics were studied through solid-state reaction experiments. The composite ceramics were characterized by x–ray diffraction, scanning electron microscopy, energy dispersive x–ray spectroscopy, and DC four–probe method. Results suggested that the main phases of LSCN and LCNZ were formed, along with a small part of impurity phases. The addition of LCNZ to LSCN decreased the electrical conductivity and changed the TCR from positive to negative. Zero TCR could be achieved around 0.6 < x < 0.8 and relatively low absolute TCR values could be obtained for the samples of 0.4 ≤ x ≤ 0.8. The ceramic of 0.6LSCN + 0.4LCNZ showed the optimal performances of conductivity = 1923 S/cm, TCR = 379.54 ppm/℃, and relative density = 95.05%.

Non-Stoichiometry and Structure of SrCe1-xYbxO3 Perovskite-Type Oxides

1996 ◽  
Vol 453 ◽  
Author(s):  
Igor Kosacki ◽  
Mark Shumsky ◽  
Harlan U. Anderson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Structural Properties ◽  
Electrical Transport ◽  
Structural Disorder ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Perovskite Type

AbstractThe structural and electrical properties of SrCe1-xYbxO3 ceramics have been studied as a function of temperature and Yb-concentration using x-ray diffraction and impedance techniques. The influence of Yb-dopants on electrical transport and structural disorder has been studied. A correlation between the structural properties, electrical conductivity is observed and discussed. These measurements allow us to determine the mechanism of charge carrier compensation and also the concentration and mobility of the electrical species.

Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

Electrical and Structural Properties of Ca Substitution in High and Low Density Y(Ba1-xCax)2Cu3O7-δ Superconductor

2016 ◽  
Vol 846 ◽  
pp. 586-590
Author(s):  
Azhan Hashim ◽  
Abd Wahab Norazidah ◽  
Azman Kasim ◽  
A. Nazree ◽  
S. Akmal Syamsyir ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Structural Properties ◽  
Structural Identification ◽  
Solid State Reaction Method ◽  
High Density ◽  
Crystallographic Structure ◽  
Low Density ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ca Substitution

The effect of Ca substitution on the electrical and structural properties in high and low density Y(Ba1-xCax)2Cu3Oδ where x = 0.00, 0.10, 0.20 and 0.30 via solid state reaction method has been investigated. The electrical properties, elemental analysis, and structural identification were measured by the four-point probe technique, energy dispersive x-ray (EDX) and X-ray diffraction (XRD) respectively. The electrical properties such as critical temperature (Tc) and critical current density (Jc) were found to be strongly dependent in both high and low densities Y(Ba1-xCax)2Cu3O7-δ. These parameters were decreased monotonously with the increasing of Ca substitution. An obvious results of the Ca-doped samples can be seen in x = 0.20 where Tc zero of high density sample is 77 K, which is higher than that of the low density sample that occurred at 73 K. Meanwhile, Jc at 60 K for high density is 1.842 A/cm2 compared to 1.410 A/cm2 in low density sample. EDX analysis confirmed the existence of Ca in all doped samples. The crystallographic structure remained orthorhombic and the volume of unit cell increased towards further increased of Ca concentration.

Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

2018 ◽  
pp. 168
Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek
Keyword(s):  
Transition Temperature ◽  
Solid State ◽  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Co2 Laser ◽  
Temperature Shift ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 

Selective oxidation of cyclopentene to glutaraldehyde by H2O2 over Nb-SBA-15

2021 ◽  
Author(s):  
yingmeng qi ◽  
Qi Han ◽  
li wu ◽  
Jun Li
Keyword(s):  
Structural Properties ◽  
Selective Oxidation ◽  
Mesoporous Materials ◽  
Hydrothermal Process ◽  
X Ray Diffraction ◽  
X Ray

A series of niobium-containing mesoporous materials Nb-SBA-15 have been prepared by sonication–impregnation and hydrothermal process. The dispersion and structural properties of niobium-containing species were systematically characterized by X-ray diffraction, scanning...

scholarly journals Local Strain Distribution in ZnO Microstructures Visualized with Scanning Nano X‐Ray Diffraction and Impact on Electrical Properties

2021 ◽  
pp. 2100201
Author(s):  
Philipp Jordt ◽  
Stjepan B. Hrkac ◽  
Jorit Gröttrup ◽  
Anton Davydok ◽  
Christina Krywka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Strain Distribution ◽  
Local Strain ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Photocurrent density and electrical properties of Bi0.5Na0.5TiO3-BaNi0.5Nb0.5O3 ceramics

2021 ◽  
Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Light Conditions ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.

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