scholarly journals Characterization of Thick Film Capicitors

1977 ◽  
Vol 4 (3-4) ◽  
pp. 125-131
Author(s):  
Y. Leroy ◽  
M. Descamps ◽  
M. Vernet
Keyword(s):  
Thick Film ◽  
Loss Factor ◽  
Training Period ◽  
Electrical Parameters ◽  
Teaching Activities ◽  
Measurement Results

Teaching activities of the “Institut Universitaire de Technologie de Lille” (France) were previously reported.The present paper reports measurement results obtained by students during their last training period for about a hundred capacitors made with commercial dielectrics (EMCA CDP 400, EMCA CDP 2000, and ESL K 1000).We examine the following points: reproducibility of capacitors during fabrication, correlation between electrical parameters of components and firing conditions, measurements of capacitance and loss factor between 10 kHz and 20 MHz for temperatures ranging from 20°C to 100°C.

Experimental Characterization of frequency-depend electrical parameters of On-Chip Interconnects

2013 ◽  
Vol 1617 ◽  
pp. 205-210
Author(s):  
Diego M. Cortés Hernández ◽  
Mónico Linares Aranda ◽  
Reydezel Torres Torres
Keyword(s):  
Skin Effect ◽  
Series Resistance ◽  
Square Root ◽  
Experimental Characterization ◽  
Electrical Parameters ◽  
Measurement Results ◽  
Resistance Curves ◽  
Dependent Series ◽  
On Chip

ABSTRACTAn exhaustive analysis of the frequency-dependent series resistance associated with the on-chip interconnects is presented. This analysis allows the identification of the regions where the resistance curves present different trending due to variations in the current distribution. Furthermore, it is explained the apparent discrepancy of experimental curves with the well-known square-root-of-frequency models for the resistance considering the skin-effect. Measurement results up to 40 GHz show that models involving terms proportional to the square root of frequency are valid provided that the section of the interconnect where the current is flowing is appropriately represented.

Usefulness of Foundry Tooling Materials in Microwave Heating Process

2013 ◽  
Vol 58 (3) ◽  
pp. 919-922 ◽  
Author(s):  
K. Granat ◽  
B. Opyd ◽  
D. Nowak ◽  
M. Stachowicz ◽  
G. Jaworski
Keyword(s):  
Electromagnetic Field ◽  
Microwave Heating ◽  
Loss Factor ◽  
Perturbation Technique ◽  
Resonant Cavity ◽  
Precise Determination ◽  
Heating Process ◽  
Basic Criterion ◽  
Measurement Results ◽  
Heating Technology

Abstract The paper describes preliminary examinations on establishing usefulness criteria of foundry tooling materials in the microwave heating technology. Presented are measurement results of permittivity and loss tangent that determine behaviour of the materials in electromagnetic field. The measurements were carried-out in a waveguide resonant cavity that permits precise determination the above-mentioned parameters by perturbation technique. Examined were five different materials designed for use in foundry tooling. Determined was the loss factor that permits evaluating usefulness of materials in microwave heating technology. It was demonstrated that the selected plastics meet the basic criterion that is transparency for electromagnetic radiation.

Characterization of a LiCoO2 thick film by screen-printing for a lithium ion micro-battery

2006 ◽  
Vol 159 (2) ◽  
pp. 1416-1421 ◽  
Author(s):  
Moon Soo Park ◽  
Sang Hoon Hyun ◽  
Sang Cheol Nam
Keyword(s):  
Thick Film ◽  
Screen Printing ◽  
Lithium Ion

Thermodynamic characterization of the power loss factor in steam turbines

2002 ◽  
Vol 43 (17) ◽  
pp. 2369-2378 ◽  
Author(s):  
Alejandro Zaleta-Aguilar ◽  
Luis F Vega ◽  
Armando Gallegos-Muñoz ◽  
Abel Hernández-Guerrero
Keyword(s):  
Loss Factor ◽  
Power Loss ◽  
Steam Turbines ◽  
Thermodynamic Characterization

scholarly journals Preparation and characterization of PZT thick film enhanced by ZnO nanowhiskers for MEMS piezoelectric generators

2011 ◽  
Vol 21 (2) ◽  
pp. 159-163 ◽  
Author(s):  
Zhong-xia DUAN ◽  
Guo-qin YU ◽  
Jun-biao LIU ◽  
Jun LIU ◽  
Xiao-wen DONG ◽  
...  
Keyword(s):  
Thick Film ◽  
Pzt Thick Film

An Experimental Apparatus for the Characterization of Thick-Film Optical Waveguides

1995 ◽  
pp. 519-525
Author(s):  
F. Docchio ◽  
G. Sansoni ◽  
D. Marioli ◽  
A. Taroni ◽  
M. Perini ◽  
...  
Keyword(s):  
Thick Film ◽  
Optical Waveguides ◽  
Experimental Apparatus

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics

2013 ◽  
Vol 205-206 ◽  
pp. 451-456 ◽  
Author(s):  
Pavel Hazdra ◽  
Vít Záhlava ◽  
Jan Vobecký
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Defects ◽  
Electrical Parameters ◽  
Power Diodes ◽  
Defect Centers ◽  
Measurement Results ◽  
Transient Spectroscopy ◽  
State Resistance

Electronic properties of radiation damage produced in 4H-SiC by electron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H‑SiC N‑epilayers, which formed the low‑doped N-base of JBS power diodes, were irradiated with 4.5 MeV electrons with fluences ranging from 1.5x1014 to 5x1015 cm-2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurement. Results show that electron irradiation introduces two defect centers giving rise to acceptor levels at EC‑0.39 and EC‑0.60 eV. Introduction rate of these centers is 0.24 and 0.65 cm‑1, respectively. These radiation defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes, however, the acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at fluences higher than 1x1015 cm‑2.

scholarly journals Comparative evaluation of three image analysis methods for angular displacement measurement in a MEMS microgripper prototype: a preliminary study

ACTA IMEKO ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 119
Author(s):  
Federica Vurchio ◽  
Giorgia Fiori ◽  
Andrea Scorza ◽  
Salvatore Andrea Sciuto
Keyword(s):  
Image Analysis ◽  
Angular Displacement ◽  
Functional Characterization ◽  
Displacement Measurement ◽  
Mems Devices ◽  
Speeded Up Robust Features ◽  
Relevant Today ◽  
Measurement Results ◽  
Preliminary Study

<p class="Abstract"><span lang="EN-US">The functional characterization of MEMS devices is relevant today since it aims at verifying the behavior of these devices, as well as improving their design. In this regard, this study focused on the functional characterization of a MEMS microgripper prototype suitable in biomedical applications: the measurement of the angular displacement of the microgripper comb-drive is carried out by means of two novel automatic procedures, based on an image analysis method, SURF-based (Angular Displacement Measurement based on Speeded Up Robust Features, ADM<sub>SURF</sub>) and FFT-based (Angular Displacement Measurement based on Fast Fourier Transform, ADM<sub>FFT</sub>) method, respectively. Moreover, the measurement results are compared with a Semi-Automatic Method (SAM), to evaluate which of them is the most suitable for the functional characterization of the device. The curve fitting of the outcomes from SAM and ADM<sub>SURF</sub>, showed a quadratic trend in agreement with the analytical model. Moreover, the ADM<sub>SURF</sub> measurements below 1° are affected by an uncertainty of about 0.08° for voltages less than 14 V, confirming its suitability for microgripper characterization. It was also evaluated that the ADM<sub>FFT</sub> is more suitable for measurement of rotations greater than 1° (up to 30°), with a measurement uncertainty of 0.02°, at 95% of confidence level.</span></p>

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