scholarly journals The Role of Solvent Environment on the Optical Behavior of Chemically Synthesized Silicon Nanoparticles

2018 ◽  
Vol 2018 ◽  
pp. 1-9
Author(s):  
Rawabi M. Al Mohaimeed ◽  
Anees A. Ansari ◽  
Abdullah Aldwayyan

Silicon nanoparticles (Si-NPs) were prepared by solution-based chemical etching method. Optical characteristics of the as-prepared Si-NPs were investigated in different polar and nonpolar organic solvents. The emission and absorption properties of Si-NPs were tuned by altering the environment (solvents). The variation in absorption coefficient was observed because of the solvent interaction nature of Si-NPs. Si-NPs in polar aprotic and nonpolar solvents manifested good luminescence under UV excitation. PL intensities were observed to be depending on etched cross-section area on wafer surface. The results show a linear dependence of the refractive index (n) on wavelength (λ). The nature of solvents altered the luminescence efficiency of Si-NPs when examining under UV lamp. The emission and absorption properties of Si-NPs were tuned by altering the environment (solvents) through electrostatic interaction of various organic solvents with the Si-NPs. The band shapes of the Si-NPs show remarkable changes in passing from noncoordinating solvent (chloroform) to various coordinating solvents, which was the result of change in the environment around Si-NPs in various solutions.

Soft Matter ◽  
2021 ◽  
Author(s):  
Huijiao Cao ◽  
Wenlin Xu ◽  
Xia Guo

Wormlike micelles (or reverse wormlike micelles) are flexible cylindrical chains that are normally formed in water (or a nonpolar organic solvent) at 25.0 °C or above; the formation of wormlike micelles at lower temperatures is rare.


2002 ◽  
Vol 67 (10) ◽  
pp. 3323-3326 ◽  
Author(s):  
Chia-Yin Chen ◽  
Yu-Shang Chang ◽  
Shun-An Lin ◽  
Hui-I Wen ◽  
Yu-Chi Cheng ◽  
...  

1973 ◽  
Vol 28 (1-2) ◽  
pp. 28-33 ◽  
Author(s):  
Thomas Kruck ◽  
Gerd Sylvester ◽  
Inge-Petra Kunau

π-Allyltris(trifluorophosphine)cobaltcomplexes, CnH2n-1Co(PF3)3, are synthetized by the reaction of hydrido-tetrakis(trifluorophosphine)cobalt with conjugated dienes. Suitable dienes are butadiene, isoprene, chloroprene, cis-1.3-pentadiene, trans-trans-2.4-hexadiene, 2.3-dimethyl-1.3-butadiene, 2.4-dimethyl-1.3-pentadiene and 1.3-cyclohexadiene. The complexes are thermally stable up to 100°C. They can be sublimed at 25°C/10-3 Torr. They are extremely soluble in polar as well as in nonpolar organic solvents. Since the 1H-NMR-signals are only poorly resolved, it is not possible to distinguish between expected isomers. The IR-spectra are consistent with a tetrahedral arrangement of the ligands.


Polymer ◽  
2012 ◽  
Vol 53 (25) ◽  
pp. 5737-5742 ◽  
Author(s):  
Ali Pourjavadi ◽  
Malihe Doulabi ◽  
Seyed Hassan Hosseini

2002 ◽  
Vol 47 (3) ◽  
pp. 518-524 ◽  
Author(s):  
Gede Wibawa ◽  
Masaki Takahashi ◽  
Yoshiyuki Sato ◽  
Shigeki Takishima ◽  
Hirokatsu Masuoka

2007 ◽  
Vol 6 (6) ◽  
pp. 429-433 ◽  
Author(s):  
Toshikazu Ono ◽  
Takahiro Sugimoto ◽  
Seiji Shinkai ◽  
Kazuki Sada

2014 ◽  
Vol 2014 ◽  
pp. 1-14 ◽  
Author(s):  
M. Naziruddin Khan ◽  
M. A. Majeed Khan ◽  
A. S. Al Dwayyan ◽  
J. Puzon Labis

Luminescent porous silicon (Psi) fabricated by simple chemical etching technique in different organic solvents was studied. By quantifying the silicon wafer piece, optical properties of the Psi in solutions were investigated. Observation shows that no photoluminescence light of Psi in all solvents is emitted. Morphology of Psi in different solvents indicates that the structure and distribution of Psi are differently observed. Particles are uniformly dispersive with the sizes around more or less 5–8 nm. The crystallographic plane and high crystalline nature of Psi is observed by selected area diffraction (SED) and XRD. Electronic properties of Psi in solutions are influenced due to the variation of quantity of wafer and nature of solvent. Influence in band gaps of Psi calculated by Tauc’s method is obtained due to change of absorption edge of Psi in solvents. PL intensities are observed to be depending on quantity of silicon wafer, etched cross-section area on wafer surface. Effects on emission peaks and bands of Psi under temperature annealing are observed. The spontaneous signals of Psi measured under high power Pico second laser 355 nm source are significant, influenced by the nature of solvent, pumped energy, and quantity of Si wafer piece used in etching process.


Sign in / Sign up

Export Citation Format

Share Document