scholarly journals Sonochemical Preparation and Subsequent Fixation of Oxygen-Free Graphene Sheets at N,N-Dimethyloctylamine-Aqua Boundary

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Elena A. Trusova ◽  
Klara V. Kotsareva ◽  
Alexey N. Kirichenko ◽  
Sergey S. Abramchuk ◽  
Igor A. Perezhogin
Keyword(s):  
Liquid Medium ◽  
Ultrasound Irradiation ◽  
Graphite Powder ◽  
Graphene Sheets ◽  
Number Of Layers ◽  
Linear Dimensions ◽  
Transmission Electron ◽  
Free Graphene ◽  
Synthetic Graphite ◽  
Electron Energy Loss

In this study, the syntheses of oxygen-free graphene sheets and the method of its fixation at an oil-aqua interface were presented. The graphene sheets were prepared by exfoliation of synthetic graphite powder in an aqua-organic medium under ultrasound irradiation. N,N-Dimethyloctylamine- (DMOA-) aqua emulsion was used as the liquid medium, and pH was equal to 3. The obtained graphene nanosuspension was fractionated by sedimentation and decanted according to the weight. The graphene nanoparticle fractions, differing in configuration and number of layers, have been characterized using transmission electron microscopy (TEM), electron diffraction, HRTEM, Raman spectroscopy, and electron energy loss spectroscopy (EELS). It was found that using a DMOA-aqua mixture as the liquid medium in ultrasonic treatment of synthetic graphite leads to the formation of oxygen-free 1-2-layer graphene sheets attached to the DMOA-aqua interface. The proposed method differs from known ones by using a small amount of more environmentally friendly organic substances. It allows to obtain large quantities of oxygen-free graphene, and finally unconverted graphite can be directed for reuse. The proposed method allows to obtain both 2D graphene sheets with micron linear dimensions and 3D packages with a high content of defects. Both these species are in demand in areas related to the development of new materials with unique electrophysical properties.

Сomparison of oxygen-free graphene sheets obtained in DMF and DMF-aqua media.

2021 ◽  
Author(s):  
Elena A. Trusova ◽  
Inna V Klimenko ◽  
Asya M Afzal ◽  
Alexander N Shchegolikhin ◽  
Lyubov V Jurina
Keyword(s):  
Liquid Medium ◽  
Biomedical Research ◽  
Science And Technology ◽  
Graphene Sheets ◽  
Wide Range ◽  
Free Graphene

N,N-dimethylformamide (DMF) is often used as a liquid medium for the exfoliation of graphene for the further use in a wide range of fields of science and technology: biomedical research,...

Effect of growth conditions on B-doped carbon nanotubes

2006 ◽  
Vol 21 (12) ◽  
pp. 3058-3064 ◽  
Author(s):  
Sara M.C. Vieira ◽  
Odile Stéphan ◽  
David L. Carroll
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Arc Discharge ◽  
Amorphous Material ◽  
Graphite Powder ◽  
Growth Conditions ◽  
Multiwalled Carbon ◽  
Boron Doped ◽  
Transmission Electron ◽  
Electron Energy Loss

The modified arc-discharge technique was used for the growth of boron-doped multiwalled carbon nanotubes. A variety of weight percentages of boron and sulfur were mixed (0.5–15 wt%) with graphite powder and packed in the consumable anode. Transmission electron microscopy, Raman spectroscopy, thermogravimetric analysis (TGA), and electron energy loss spectroscopy (EELS) were used to characterize the samples. EELS indicated a small percentage of boron present (<1 at.%) in the nanotubes. Sulfur was used primarily to enhance boron incorporation; however, Raman and TGA measurements indicated fewer defects and/or amorphous material present when sulfur was added.

A standard for transmission electron spectroscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 530-531 ◽  
Author(s):  
Dennis Maher ◽  
David Joy ◽  
Peggy Mochel
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Host Lattice ◽  
Single Element ◽  
Multicomponent Systems ◽  
Transmission Electron ◽  
Major Interest ◽  
Standard Specimens ◽  
Forms Of Carbon ◽  
Electron Energy Loss

A variety of standard specimens is needed in order to systematically investigate the instrumentation, specimen, data reduction and quantitation variables in electron energy-loss spectroscopy (EELS). Pure single element specimens (e.g. various forms of carbon) have received considerable attention to date but certain elements of interest cannot be prepared directly as thin films. Since studies of the first and second row elements in two- or multicomponent systems will be of considerable importance in microanalysis using EELS, there is a need for convenient standards containing these species. For many investigations a standard should contain the desired element, or elements, homogeneously dispersed through a suitable matrix and at an accurately known concentration. These conditions may be met by the technique of implantation.Silicon was chosen as the host lattice since its principal ionization energies, EL23 = 98 eV and Ek = 1843 eV, are well removed from the K-edges of most elements of major interest such as boron (Ek = 188 eV), carbon (Ek = 283 eV), nitrogen (Ek = 400 eV) and oxygen (Ek = 532 eV).

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

EELS characterization of “Smut” layer films on steel surface prepared for chrome plating by anodic etching

1995 ◽  
Vol 53 ◽  
pp. 538-539
Author(s):  
E Y. Wang ◽  
J. T. Cherian ◽  
A. Madsen ◽  
R. M. Fisher
Keyword(s):  
Steel Surface ◽  
Surface Preparation ◽  
Treatment Method ◽  
Chrome Plating ◽  
Transmission Electron ◽  
Alloy Steels ◽  
Pre Treatment ◽  
Hard Chrome ◽  
Electron Energy Loss

Many steel parts are electro-plated with chromium to protect them against corrosion and to improve their wear-resistance. Good adhesion of the chrome plate to the steel surface, which is essential for long term durability of the part, is extremely dependent on surface preparation prior to plating. Recently, McDonnell Douglas developed a new pre-treatment method for chrome plating in which the steel is anodically etched in a sulfuric acid and hydrofluoric acid solution. On carbon steel surfaces, this anodic pre-treatment produces a dark, loosely adhering material that is commonly called the “smut” layer. On stainless steels and nickel alloys, the surface is only darkened by the anodic pre-treatment and little residue is produced. Anodic pre-treatment prior to hard chrome plating results in much better adherence to both carbon and alloy steels.We have characterized the anodic pre-treated steel surface and the resulting “smut” layer using various techniques including electron spectroscopy for chemical analysis (ESCA) on bulk samples and transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS) on stripped films.

A library of convergent-beam electron diffraction patterns

1986 ◽  
Vol 44 ◽  
pp. 688-691
Author(s):  
John F. Mansfield
Keyword(s):  
Electron Diffraction ◽  
Materials Science ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Transmission Electron ◽  
Yield Information ◽  
Analytical Electron ◽  
Diffraction Patterns ◽  
Convergent Beam ◽  
Electron Energy Loss

One of the most important advancements of the transmission electron microscopy (TEM) in recent years has been the development of the analytical electron microscope (AEM). The microanalytical capabilities of AEMs are based on the three major techniques that have been refined in the last decade or so, namely, Convergent Beam Electron Diffraction (CBED), X-ray Energy Dispersive Spectroscopy (XEDS) and Electron Energy Loss Spectroscopy (EELS). Each of these techniques can yield information on the specimen under study that is not obtainable by any other means. However, it is when they are used in concert that they are most powerful. The application of CBED in materials science is not restricted to microanalysis. However, this is the area where it is most frequently employed. It is used specifically to the identification of the lattice-type, point and space group of phases present within a sample. The addition of chemical/elemental information from XEDS or EELS spectra to the diffraction data usually allows unique identification of a phase.

High Spatial Resolution Compositional Analysis at Interfaces

1980 ◽  
Vol 38 ◽  
pp. 356-359
Author(s):  
John B. Vander Sande ◽  
Thomas F. Kelly ◽  
Douglas Imeson
Keyword(s):  
Electron Microscope ◽  
High Spatial Resolution ◽  
Compositional Analysis ◽  
Scanning Transmission Electron Microscope ◽  
Thin Specimen ◽  
X Ray ◽  
Volume Of Interest ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Energy Loss

In the scanning transmission electron microscope (STEM) a fine probe of electrons is scanned across the thin specimen, or the probe is stationarily placed on a volume of interest, and various products of the electron-specimen interaction are then collected and used for image formation or microanalysis. The microanalysis modes usually employed in STEM include, but are not restricted to, energy dispersive X-ray analysis, electron energy loss spectroscopy, and microdiffraction.

Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose
Keyword(s):  
Ab Initio ◽  
Grain Boundaries ◽  
Ab Initio Calculation ◽  
Structure Model ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Grain ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

2017 ◽  
Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hafnium Dioxide ◽  
Switching Mechanism ◽  
Transmission Electron ◽  
Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

Sign in / Sign up

Export Citation Format

Share Document