scholarly journals Polyarylene Ether Nitrile-Based High-k Composites for Dielectric Applications

2018 ◽  
Vol 2018 ◽  
pp. 1-15 ◽  
Author(s):  
Yong You ◽  
Chenhao Zhan ◽  
Ling Tu ◽  
Yajie Wang ◽  
Weibin Hu ◽  
...  

Flexible polymer-based composites exhibiting high dielectric constant as well as low dielectric loss have been intensively investigated for their potential utilization in electronics and electricity industry and energy storage. Resulting from the polar -CN on the side chain, polyarylene ether nitrile (PEN) shows relatively high dielectric constant which has been extensively investigated as one of the hot spots as dielectric materials. However, the dielectric constant of PEN is still much lower than the ceramic dielectrics such as BaTiO3, TiO2, and Al2O3. In this review, recent and in-progress advancements in the designing and preparing strategies to obtain high-k PEN-based nanocomposites are summarized. According to the types of the added fillers, the effects of organic fillers, dielectric ceramic fillers, and conductive fillers on electric properties of PEN-based composites are investigated. In addition, other factors including the structures and sizes of the additive, the compatibility between the additive agent and the PEN, and the interface which affects the dielectric properties of the obtained composite materials are investigated. Finally, challenges facing in the design of more effective strategies for the high-k PEN-based dielectric materials are discussed.

2016 ◽  
Vol 840 ◽  
pp. 87-90 ◽  
Author(s):  
Rosyaini Afindi Zaman ◽  
Mohamad Johari Abu ◽  
Saniah Abdul Karim ◽  
Julie Juliewatty Mohamed ◽  
Mohd Fadzil Ain ◽  
...  

In recent years, there has been an increasing interest on high dielectric constant that have significant applications in electronic devices. Dielectric materials have many technological applications such as capacitors, resonators and filters. High dielectric ceramic capacitors based perovskite oxides are necessary for modern electronic devices and are found to be suitable for a wide range of applications. Subramanian et al. discovered the high dielectric constant of CaCu3Ti4O12 (CCTO) ~ 10,000 at room temperature. CCTO has the cubic perovskite crystal structure and high dielectric constant of ~ 104 up to 105 at radio frequency and good temperature stability over a wide temperature range [1,2]. These properties were desired for various microelectronic applications. With the high dielectric constant, the material can store more charge and the values make CCTO an attractive material for ultra-high energy density capacitors. However, this properties can be accomplished if single phase of CCTO is formed. Many research have been done recently on the synthesis of the cubic perovskite CCTO and many techniques are working such as sol-gel route [3], combustion techniques [4], molten salt process [5] and etc., but this technique is difficult and complex process during sample preparation.


2015 ◽  
Vol 659 ◽  
pp. 58-63
Author(s):  
Oratai Jongprateep ◽  
Tunchanoke Khongnakhon ◽  
Jednupong Palomas

Rising worldwide demands for energy encourages development of high-efficiency energy storage and capacitor components. Main requirements for dielectric materials employed in fabrication of high energy density capacitors include high dielectric constant, high dielectric breakdown strength, and low dielectric loss. Owing to its high dielectric constant and low dielectric loss [1], barium titanate is among common capacitor materials. Tailoring of dielectric properties of barium titanate can be achieved through controlled chemical composition, microstructure, and crystal structure. Synthesis and processing techniques, as well as doping of barium titanate, can be key factors to control the composition and structure, which consequently contribute to enhancement of dielectric constant in the material.


2018 ◽  
Vol 6 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
Yang Liu ◽  
Cheng Zhang ◽  
Benyuan Huang ◽  
Xu Wang ◽  
Yulong Li ◽  
...  

A novel skin–core structured fluorinated MWCNT nanofiller was prepared to fabricate epoxy composite with broadband high dielectric constant and low dielectric loss.


RSC Advances ◽  
2017 ◽  
Vol 7 (38) ◽  
pp. 23309-23312 ◽  
Author(s):  
Ting Yang ◽  
Wenhui Xu ◽  
Xinwen Peng ◽  
Haoqing Hou

Crown ether-containing polyimides possess high dielectric constant and low dielectric loss, without sacrificing other properties.


Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 14740-14753 ◽  
Author(s):  
Ke Yang ◽  
Xingyi Huang ◽  
Lijun Fang ◽  
Jinliang He ◽  
Pingkai Jiang

Fluoro-polymer functionalized graphene was synthesized for flexible polymer-based nanodielectrics. The resulting nanocomposites exhibit high dielectric constant, suppressed dielectric loss and low percolation threshold.


2013 ◽  
Vol 1561 ◽  
Author(s):  
M.A Jithin ◽  
Lakshmi Ganapathi Kolla ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Yuichiro Morozumi ◽  
...  

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.


2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.


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