scholarly journals XOR Logic Gate by Carbon/Metal Nanoinks Based on a Double-Stage Optical Kerr Gate Configuration

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
J. A. García-Merino ◽  
E. Feria-Reyes ◽  
C. Mercado-Zúñiga ◽  
M. Trejo-Valdez ◽  
C. R. Torres-San Miguel ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Logic Gate ◽  
Multiwall Carbon Nanotubes ◽  
Chemical Vapor ◽  
Stage Scheme ◽  
Vapor Deposition Technique ◽  
Potential Applications ◽  
Optical Kerr Gate ◽  
Logic Operations ◽  
Exclusive Or

Two-input binary exclusive-or logic operations were presented by the assistance of multiwall carbon nanotubes in a double-stage optical Kerr gate scheme with two control beams. The samples were prepared by the aerosol pyrolysis method and decorated by platinum nanoparticles using a chemical vapor deposition technique. The nanostructures were suspended in ethanol to obtain carbon/metal nanoinks with different concentrations and then randomly distributed networks integrated in thin film form were fabricated. Polarization-selectable functions were obtained in the double-stage scheme by using nanosecond third-order nonlinear optical effects at 532 nm wavelength exhibited by the samples. Potential applications for ultrafast identification and encryption of nonlinear optical signals were discussed.

From helical nanowires, nanocrosses to aligned micro-carbon fibers

2003 ◽  
Vol 776 ◽  
Author(s):  
Hai-Feng Zhang ◽  
Chong-Min Wang ◽  
James S. Young ◽  
James E. Coleman ◽  
Lai-Sheng Wang
Keyword(s):  
Carbon Fibers ◽  
Chemical Vapor ◽  
Graphitic Carbon ◽  
Core Shell ◽  
Uniform Layer ◽  
C Fibers ◽  
Novel Structure ◽  
Vapor Deposition Technique ◽  
Potential Applications ◽  
Structural Characterizations

AbstractWe successfully synthesized helical core-shell crystalline SiC/SiO2 nanowires, core-shell crystalline SiC/C nano-crosses and well-aligned core-shell crystalline SiC/C fibers by using a chemical vapor deposition technique. For the helical crystalline SiC/SiO2 nanowires, the SiC core typically has diameters of 10-40 nm with a helical periodicity of 40-80 nm and is covered by a uniform layer of 30-60 nm thick amorphous SiO2. Detailed structural characterizations suggested that the growth of this novel structure was induced by screw dislocations on the nanometer scale. For the core-shell nanocrosses, the crystalline SiC core typically has diameters of 10 to 40 nm and is covered by a uniform layer of 80-110 nm graphitic carbon. The wellaligned SiC/C fibers were shown to be formed by two sequential steps: catalytic SiC growth and graphitic carbon nano-sheets coating. The helical nanowires and core-shell nanocrosses may have potential applications in nano-electronics. The formation mechanism of the carbon fibers suggested that fabrication of field emission filament carbon nano-fibers may be realized by using the aligned crystalline nanowires as templates.

scholarly journals Mechanooptic Regulation of Photoconduction in Functionalized Carbon Nanotubes Decorated with Platinum

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
C. Mercado-Zúñiga ◽  
C. Torres-Torres ◽  
M. Trejo-Valdez ◽  
R. Torres-Martínez ◽  
S. Tarrago-Velez ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Optical Absorption ◽  
Nonlinear Optical ◽  
Multiwall Carbon Nanotubes ◽  
Chemical Vapor ◽  
Photon Absorption ◽  
Chemical Vapor Deposition Method ◽  
Silica Substrate ◽  
Nonlinear Optical Absorption ◽  
Platinum Particles

The observation of photoconduction and nonlinear optical absorption on functionalized multiwall carbon nanotubes decorated with platinum is reported. The samples were prepared by a chemical vapor deposition method. The electrical conductivity of the carbon nanotubes seems to be decreased by the functionalization process; but this property is strongly enhanced after the incorporation of platinum particles. Nonresonant photoconductive experiments at 532 nm and 445 nm wavelengths allow us to detect a selective participation of the platinum to the photoelectrical response. A mechanooptic effect based on Fresnel reflection was obtained through a photoconductive modulation induced by the rotation of a silica substrate where the samples were deposited as a thin film. A two-photon absorption process was identified as the main physical mechanism responsible for the nonlinear optical absorption. We consider that important changes in the nonlinear photon interactions with carbon nanotubes can be related to the population losses derived from phonons and the detuning of the frequency originated by functionalization.

scholarly journals Spectroscopic Properties of Si-nc in SiOx Films Using HFCVD

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1415
Author(s):  
Zaira Jocelyn Hernández Simón ◽  
Jose Alberto Luna López ◽  
Alvaro David Hernández de la Luz ◽  
Sergio Alfonso Pérez García ◽  
Alfredo Benítez Lara ◽  
...  
Keyword(s):  
Band Gap ◽  
Thermal Annealing ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Spectroscopic Properties ◽  
Spectroscopic Techniques ◽  
Vapor Deposition Technique ◽  
Potential Applications ◽  
Hot Filament ◽  
Short Time

In the present work, non-stoichiometric silicon oxide films (SiOx) deposited using a hot filament chemical vapor deposition technique at short time and simple parameters of depositions are reported. This is motivated by the numerous potential applications of SiOx films in areas such as optoelectronics. SiOx films were characterized with different spectroscopic techniques. The deposited films have interesting characteristics such as the presence of silicon nanoclusters without applying thermal annealing, in addition to a strong photoluminescence after applying thermal annealing in the vicinity of 1.5 eV, which may be attributed to the presence of small, oxidized silicon grains (less than 2 nm) or silicon nanocrystals (Si-nc). An interesting correlation was found between oxygen content, the presence of hydrogen, and the formation of defects in the material, with parameters such as the band gap and the Urbach energies. This correlation is interesting in the development of band gap engineering for this material for applications in photonic devices.

Novel organic, polymeric materials for electronics applications

2002 ◽  
Vol 722 ◽  
Author(s):  
Ram W. Sabnis ◽  
Mary J. Spencer ◽  
Douglas J. Guerrero
Keyword(s):  
Optical Density ◽  
Chemical Vapor ◽  
Polymeric Materials ◽  
Substantial Improvement ◽  
Polymeric Systems ◽  
Patterned Wafers ◽  
Visible Spectra ◽  
Potential Applications ◽  
Deep Ultraviolet ◽  
Deposited Films

AbstractNovel organic, polymeric materials and processes of depositing thin films on electronics substrates by chemical vapor deposition (CVD) have been developed and the lithographic behavior of photoresist coated over these CVD films at deep ultraviolet (DUV) wavelength has been evaluated. The specific monomers synthesized for DUV applications include [2.2](1,4)- naphthalenophane, [2.2](9,10)-anthracenophane and their derivatives which showed remarkable film uniformity on flat wafers and conformality over structured topography wafers, upon polymerization by CVD. The chemical, physical and optical properties of the deposited films have been characterized by measuring parameters such as thickness uniformity, solubility, conformality, adhesion to semiconductor substrates, ultraviolet-visible spectra, optical density, optical constants, defectivity, and resist compatibility. Scanning electron microscope (SEM) photos of cross-sectioned patterned wafers showed verticle profiles with no footing, standing waves or undercut. Resist profiles down to 0.10 νm dense lines and 0.09 νm isolated lines were achieved in initial tests. CVD coatings generated 96-100% conformal films, which is a substantial improvement over commercial spin-on polymeric systems. The light absorbing layers have high optical density at 248 nm and are therefore capable materials for DUV lithography applications. CVD is a potentially useful technology to extend lithography for sub-0.15 νm devices. These films have potential applications in microelectronics, optoelectronics and photonics.

Controlled Growth of the Non-centrosymmetric Zn(3-ptz)2 and Zn(Oh)(3-ptz) Metal-organic Frameworks

2019 ◽  
Author(s):  
javier enriquez ◽  
Ignacio Chi-Duran ◽  
Carolina Manquian ◽  
Felipe Herrera ◽  
Ruben Fritz ◽  
...  
Keyword(s):  
Single Crystal ◽  
Nonlinear Optical ◽  
Metal Organic Frameworks ◽  
Molar Ratio ◽  
Thermal Synthesis ◽  
Small Crystals ◽  
Alkaline Environments ◽  
Potential Applications ◽  
Metal Organic ◽  
Long Rod

Non-centrosymmetric single-crystal metal-organic frameworks (MOF) are promising candidates for phase-matched nonlinear optical communication, but typical hydrothermal synthesis produces small crystals with relatively low transmittance and poor phase matching. We study the effect of the metal-to-ligand molar ratio and reaction pH on the hydro-thermal synthesis of the non-centrosymmetric Zn(3-ptz)<sub>2</sub> and Zn(OH)(3-ptz) MOFs with <i>in-situ </i>ligand formation. In acidic environments, we find that decreasing the amount of ligand below the stoichiometric molar ratio 1:2 also produces highly transparent single-crystal octahedrons of <b>Zn(3-ptz)<sub>2</sub></b>. In alkaline environments, we obtain long rod-like <b>Zn(OH)(3-ptz) </b>crystals whose length exceeds previous reports by up to four orders of magnitude. Potential applications of these results in the development of MOF-based nonlinear optical devices are discussed.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

scholarly journals Silica Layer Used in Sensor Fabrication from a Low-Temperature Silane-Free Procedure

Chemosensors ◽  
2021 ◽  
Vol 9 (2) ◽  
pp. 32
Author(s):  
Pei-Cheng Jiang ◽  
Yu-Ting Chow ◽  
Chi-Wei Chien ◽  
Cheng-Hsun-Tony Chang ◽  
Chii-Ruey Lin
Keyword(s):  
Room Temperature ◽  
Chemical Vapor ◽  
Industrial Safety ◽  
Silica Layer ◽  
Silica Films ◽  
Sensor Fabrication ◽  
Vapor Deposition Technique ◽  
Safety Design ◽  
Biogenic Polyamines ◽  
Si Wafer

Silica (SiO2, silicon dioxide—a dielectric layer commonly used in electronic devices) is widely used in many types of sensors, such as gas, molecular, and biogenic polyamines. To form silica films, core shell or an encapsulated layer, silane has been used as a precursor in recent decades. However, there are many hazards caused by using silane, such as its being extremely flammable, the explosive air, and skin and eye pain. To avoid these hazards, it is necessary to spend many resources on industrial safety design. Thus, the silica synthesized without silane gas which can be determined as a silane-free procedure presents a clean and safe solution to manufactures. In this report, we used the radio frequency (rf = 13.56 MHz) plasma-enhanced chemical vapor deposition technique (PECVD) to form a silica layer at room temperature. The silica layer is formed in hydrogen-based plasma at room temperature and silane gas is not used in this process. The substrate temperature dominates the silica formation, but the distance between the substrate and electrode (DSTE) and the methane additive can enhance the formation of a silica layer on the Si wafer. This silane-free procedure, at room temperature, is not only safer and friendlier to the environment but is also useful in the fabrication of many types of sensors.

scholarly journals Controlled Fabrication of Quality ZnO NWs/CNTs and ZnO NWs/Gr Heterostructures via Direct Two-Step CVD Method

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1836
Author(s):  
Nicholas Schaper ◽  
Dheyaa Alameri ◽  
Yoosuk Kim ◽  
Brian Thomas ◽  
Keith McCormack ◽  
...  
Keyword(s):  
Direct Synthesis ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Materials Synthesis ◽  
Oxide Nanowires ◽  
Cvd Method ◽  
Thermal Actuators ◽  
Potential Applications ◽  
Walled Carbon Nanotubes ◽  
Scalable Production

A novel and advanced approach of growing zinc oxide nanowires (ZnO NWs) directly on single-walled carbon nanotubes (SWCNTs) and graphene (Gr) surfaces has been demonstrated through the successful formation of 1D–1D and 1D–2D heterostructure interfaces. The direct two-step chemical vapor deposition (CVD) method was utilized to ensure high-quality materials’ synthesis and scalable production of different architectures. Iron-based universal compound molecular ink was used as a catalyst in both processes (a) to form a monolayer of horizontally defined networks of SWCNTs interfaced with vertically oriented ZnO NWs and (b) to grow densely packed ZnO NWs directly on a graphene surface. We show here that our universal compound molecular ink is efficient and selective in the direct synthesis of ZnO NWs/CNTs and ZnO NWs/Gr heterostructures. Heterostructures were also selectively patterned through different fabrication techniques and grown in predefined locations, demonstrating an ability to control materials’ placement and morphology. Several characterization tools were employed to interrogate the prepared heterostructures. ZnO NWs were shown to grow uniformly over the network of SWCNTs, and much denser packed vertically oriented ZnO NWs were produced on graphene thin films. Such heterostructures can be used widely in many potential applications, such as photocatalysts, supercapacitors, solar cells, piezoelectric or thermal actuators, as well as chemical or biological sensors.

scholarly journals Impedance Spectroscopic Study of Nickel Sulfide Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Technique

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1105
Author(s):  
Sadia Iram ◽  
Azhar Mahmood ◽  
Muhammad Fahad Ehsan ◽  
Asad Mumtaz ◽  
Manzar Sohail ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nickel Sulfide ◽  
Variable Temperature ◽  
Complex Impedance ◽  
Equivalent Circuit Model ◽  
Chemical Vapor ◽  
Relaxation Processes ◽  
Impedance Plot ◽  
Vapor Deposition Technique

This research aims to synthesize the Bis(di-isobutyldithiophosphinato) nickel (II) complex [Ni(iBu2PS2)] to be employed as a substrate for the deposition of nickel sulfide nanostructures, and to investigate its dielectric and impedance characteristics for applications in the electronic industry. Various analytical tools including elemental analysis, mass spectrometry, IR, and TGA were also used to further confirm the successful synthesis of the precursor. NiS nanostructures were grown on the glass substrates by employing an aerosol assisted chemical vapor deposition (AACVD) technique via successful decomposition of the synthesized complex under variable temperature conditions. XRD, SEM, TEM, and EDX methods were well applied to examine resultant nanostructures. Dielectric studies of NiS were carried out at room temperature within the 100 Hz to 5 MHz frequency range. Maxwell-Wagner model gave a complete explanation of the variation of dielectric properties along with frequency. The reason behind high dielectric constant values at low frequency was further endorsed by Koops phenomenological model. The efficient translational hopping and futile reorientation vibration caused the overdue exceptional drift of ac conductivity (σac) along with the rise in frequency. Two relaxation processes caused by grains and grain boundaries were identified from the fitting of a complex impedance plot with an equivalent circuit model (Rg Cg) (Rgb Qgb Cgb). Asymmetry and depression in the semicircle having center present lower than the impedance real axis gave solid justification of dielectric behavior that is non-Debye in nature.

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