Effect of substrate temperature on the microstructure, optical, and electrical properties of reactive DC magnetron sputtering vanadium oxide films

2012 ◽  
Vol 209 (11) ◽  
pp. 2229-2234 ◽  
Author(s):  
Dongping Zhang ◽  
Rengui Huang ◽  
Ting Zhang ◽  
Yan Li ◽  
Youtong Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Vanadium Oxide ◽  
Oxide Films ◽  
Optical And Electrical Properties ◽  
Dc Magnetron Sputtering ◽  
Vanadium Oxide Films

Reactive DC Magnetron Sputtering of Vanadium Oxide Thin Films

2008 ◽  
Vol 587-588 ◽  
pp. 343-347 ◽  
Author(s):  
C. Batista ◽  
J. Mendes ◽  
Vasco Teixeira ◽  
Joaquim Carneiro
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Single Phase ◽  
Oxide Films ◽  
Wide Field ◽  
Dc Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films ◽  
Vanadium Oxide Films

Vanadium oxides are a class of materials with outstanding physical and chemical properties. They find a wide field of technological applications such as optical and electrical switching devices, light detectors, temperature sensors, micro batteries, etc. There are several studies regarding the production of vanadium oxide films by radio-frequency (RF) magnetron sputtering, and with increasing interest on the thermochromic VO2 phase. However, literature with focus on vanadium oxide films deposited by direct current (DC) magnetron sputtering is very limited. In this work, we have successfully deposited vanadium oxide thin films by reactive DC magnetron sputtering under several processing conditions. The effect of substrate type, temperature, and O2/Ar flow ratio on phase formation has been studied. Structural analysis and phase determination have been carried out by X-ray diffractometry (XRD). Some single phase samples were also analysed with respect to surface morphology by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thermochromic behaviour of single phase VO2(M) films has been evaluated by optical spectrophotometry.

STUDY OF THE ELECTRICAL PROPERTIES OF SOL-GEL-DERIVED TITANIUM-VANADIUM OXIDE FILMS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4465-4468 ◽  
Author(s):  
GAOLING ZHAO ◽  
GAORONG HAN
Keyword(s):  
Solid Solution ◽  
Electrical Properties ◽  
Vanadium Oxide ◽  
Hall Mobility ◽  
Sol Gel ◽  
Oxide Films ◽  
X Ray Diffraction ◽  
Type Semiconductor ◽  
Titanium Vanadium ◽  
Vanadium Oxide Films

Titanium-vanadium oxide films were prepared by the sol-gel method. The effects of vanadium incorporation on the crystallization behavior TiO 2 were investigated by X-ray diffraction analysis. The results showed that anatase and rutile type solid solution Ti 1-x V x O 2 films were obtained for x < 0.15 and x > 0.15 samples, respectively. Anatase and V 2 O 5 were found in x = 0.15 sample. Moreover, it was found that the crystallization of the film increased with increasing amount of vanadium. The electrical properties of Ti 1-x V x O 2 films were studied by measuring their resistance and Hall mobility. It was revealed that the resistivity of Ti 1-x V x O 2 films decreased with increasing x when the solid solution was formed, while the resistivity increased when the crystallization of vanadium oxide precipitated. The Hall constant was negative, indicating that Titanium-vanadium oxide is an n-type semiconductor. The evolution of the resistance and Hall mobility was ascribed to the 3d electrons of vanadium.

Epitaxial relationships and electrical properties of vanadium oxide films on r-cut sapphire

1999 ◽  
Vol 338 (1-2) ◽  
pp. 60-69 ◽  
Author(s):  
H. Bialas ◽  
A Dillenz ◽  
H. Downar ◽  
P. Ziemann
Keyword(s):  
Electrical Properties ◽  
Vanadium Oxide ◽  
Oxide Films ◽  
Vanadium Oxide Films
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