scholarly journals Power Device Thermal Fault Tolerant Control of High-Power Three-Level Explosion-Proof Inverter Based on Holographic Equivalent Dual-Mode Modulation

2017 ◽  
Vol 2017 ◽  
pp. 1-9
Author(s):  
Shi-Zhou Xu ◽  
Chun-jie Wang ◽  
Yu-feng Peng
Keyword(s):  
Thermal Stability ◽  
High Power ◽  
Pulse Width Modulation ◽  
Fault Tolerant ◽  
High Thermal Stability ◽  
Equivalent Model ◽  
Power Device ◽  
Power Devices ◽  
Dual Mode ◽  
Output Characteristics

It is necessary for three-level explosion-proof inverters to have high thermal stability and good output characteristics avoiding problems caused by power devices, such as IGBT, so it becomes a hot and difficult research point using only one control algorithm to guarantee both output characteristics and high thermal stability. Firstly, the simplified SVPWM (Space Vector Pulse Width Modulation) algorithm was illustrated based on the NPC (neutral-point-clamped) three-level inverter, and then the quasi-square wave control was brought in and made into a novel holographic equivalent dual-mode modulation algorithm together with the simplified SVPWM. The holographic equivalent model was established to analyze the relative advantages comparing with the two single algorithms. Finally, the dynamic output and steady power device losses were analyzed, based on which the power loss calculation and system simulation were conducted as well. The experiment proved that the high-power three-level explosion-proof inverter has good output characteristics and thermal stability.

scholarly journals Improvement of High-Power Three-Level Explosion-Proof Inverters Using Soft Switching Control Based on Optimized Power-Loss Algorithm

2015 ◽  
Vol 2015 ◽  
pp. 1-14
Author(s):  
Shi-Zhou Xu ◽  
Feng-You He
Keyword(s):  
Thermal Stability ◽  
High Power ◽  
Power Loss ◽  
Thermal Model ◽  
Heat Dissipation ◽  
Soft Switching ◽  
Power Devices ◽  
Loss Calculation ◽  
Output Characteristics ◽  
Thermal Stability Of

The high-power three-level explosion-proof inverters demand high thermal stability of power devices, and a set of theories and methods is needed to achieve an accurate power-loss calculation of power devices, to establish heat dissipation model, and ultimately to reduce the power loss to improve thermal stability of system. In this paper, the principle of neutral point clamped three-level (NPC3L) inverter is elaborated firstly, and a fourth-order RC equivalent circuit of IGBT is derived, on which basis the power-loss model of IGBT and the optimized maternal power-loss thermal model, using an optimized power-loss algorithm, are established. Secondly, in accordance with the optimized maternal power-loss thermal model, the generic formulas of power-loss calculation are deduced to calculate the power-loss modification values of NPC3L and soft switching three-level (S3L) inverters, which will be the thermal sources during thermal analysis for maternal power-loss thermal models. Finally, the experiment conducted on the 2.1 MW experimental platform shows that S3L inverter has the same excellent output characteristics with NPC3L inverter, reduces the power loss significantly by 213 W in each half-bridge, and decreases the temperature by 10°C, coinciding with the theoretical calculation, which verifies the accuracy of optimized power-loss algorithm and the effectiveness of the improvement.

High thermal stability AlN-YAG: Ce composite phosphor ceramics for high-power laser-driven lighting

2021 ◽  
Vol 119 (25) ◽  
pp. 251903
Author(s):  
Yanbin Li ◽  
Chaoyang Ma ◽  
Chuandong Zuo ◽  
Wanggui Ye ◽  
Xiaofei Shen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Power ◽  
High Thermal Stability ◽  
High Power Laser ◽  
Power Laser

scholarly journals UV-curable ladder-like diphenylsiloxane-bridged methacryl-phenyl-siloxane for high power LED encapsulation

RSC Advances ◽  
2018 ◽  
Vol 8 (17) ◽  
pp. 9049-9056 ◽  
Author(s):  
X. X. Shang ◽  
S. Duan ◽  
M. Zhang ◽  
X. Y. Cao ◽  
K. Zheng ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Power ◽  
High Thermal Stability ◽  
Uv Curable ◽  
High Power Led

UV-curable ladder-like polysiloxane was constructed to integrate high RI (1.61/450 nm) with high thermal stability etc. for high power LED encapsulation.

scholarly journals Silicon carbide power device characteristics, applications and challenges: an overview

2020 ◽  
Vol 11 (4) ◽  
pp. 2194
Author(s):  
Muhamad Faizal Yaakub ◽  
Mohd Amran Mohd Radzi ◽  
Faridah Hanim Mohd Noh ◽  
Maaspaliza Azri
Keyword(s):  
Silicon Carbide ◽  
System Design ◽  
Power Electronics ◽  
Power Density ◽  
High Power ◽  
System Performance ◽  
Power Device ◽  
Power Devices ◽  
Performance Limitation ◽  
Design Challenges

Silicon (Si) based power devices have been employed in most high power applications since decades ago. However, nowadays, most major applications demand higher efficiency and power density due to various reasons. The previously well-known Si devices, unfortunately, have reached their performance limitation to cover all those requirements. Therefore, Silicon Carbide (SiC) with its unique and astonishing characteristic has gained huge attention, particularly in the power electronics field. Comparing both, SiC presents a remarkable ability to enhance overall system performance and the transition from Si to SiC is crucial. With regard to its importance, this paper provides an overview of the characteristics, advantages, and outstanding capabilities in various application for SiC devices. Furthermore, it is also important to disclose the system design challenges, which are discussed at the end of the paper.

Measurement of Bonding Stress in Silicon High Power Device Structures by Infrared Photoelasticity Method

1999 ◽  
Vol 563 ◽  
Author(s):  
H. J. Peng ◽  
S. P. Wong ◽  
W. F. Lau ◽  
N. Ke ◽  
Shounan Zhao
Keyword(s):  
High Power ◽  
Quantitative Information ◽  
Bonding Process ◽  
Power Device ◽  
Geometrical Parameters ◽  
Interlaminar Stresses ◽  
Si Substrate ◽  
Power Devices ◽  
Si Substrates ◽  
Device Structures

AbstractSilicon high-power devices are commonly bonded to Mo electrodes using Al films. Bonding stress will inevitably be introduced into the Si substrate by such a process. In this work, the infrared (IR) photoelasticity (PE) method was employed to measure the stress distribution in the Si substrates induced by high temperature bonding process of Si/Al/Mo structures commonly used in the production of silicon thyristors. It is demonstrated that quantitative information on both the directions and magnitudes of the stress can be obtained. The dependence of the magnitude of the stress on the geometrical parameters of the structure has also been studied. The experimental results are shown to agree well with the calculated results derived from a theory of interlaminar stresses in composites.

The excellent luminous efficiency and high thermal stability of phosphor-in-glass for high-power laser

2021 ◽  
Vol 119 (3) ◽  
pp. 033303
Author(s):  
Yueyuan Liang ◽  
Yujie Zhang ◽  
Haisheng Yang ◽  
Yaqian Zhang ◽  
Jiangdan Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Power ◽  
Luminous Efficiency ◽  
High Thermal Stability ◽  
High Power Laser ◽  
Power Laser ◽  
Thermal Stability Of

An advanced composite sorbent with high thermal stability and superior sorption capacity without hysteresis for a better thermal battery

2020 ◽  
Vol 8 (23) ◽  
pp. 11849-11858 ◽  
Author(s):  
Guoliang An ◽  
Yiheng Zhang ◽  
Liwei Wang ◽  
Bo Zhang
Keyword(s):  
Thermal Stability ◽  
Energy Storage ◽  
Sorption Capacity ◽  
Thermal Energy ◽  
High Power ◽  
High Thermal Stability ◽  
High Power Density ◽  
Composite Sorbent ◽  
Thermal Battery ◽  
Advanced Composite

Solving the bottlenecks of notable hysteresis and mediocre sorption capacity for low-heat-loss and high-power-density thermal energy storage.

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