scholarly journals Control of Bouncing in MEMS Switches Using Double Electrodes

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
Farhan Abdul Rahim ◽  
Mohammad I. Younis
Keyword(s):  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Electrostatic Force ◽  
Squeeze Film ◽  
Beam Model ◽  
Mems Switches ◽  
Lumped Parameter ◽  
Rf Mems Switches ◽  
Double Electrode ◽  
The Galerkin Method

This paper presents a novel way of controlling the bouncing phenomenon commonly present in the Radio Frequency Microelectromechanical Systems (RF MEMS) switches using a double-electrode configuration. The paper discusses modeling bouncing using both lumped parameter and beam models. The simulations of bouncing and its control are discussed. Comparison between the new proposed method and other available control techniques is also made. The Galerkin method is applied on the beam model accounting for the nonlinear electrostatic force, squeeze film damping, and surface contact effect. The results indicate that it is possible to reduce bouncing and hence beam degradation, by the use of double electrodes.

Process-Induced Thermal Effect on Packaging Yield of RF MEMS Switches

2002 ◽  
Author(s):  
Lei L. Mercado ◽  
Shun-Meen Kuo ◽  
Tien-Yu Tom Lee ◽  
Russ Lee
Keyword(s):  
Printed Circuit Board ◽  
Failure Modes ◽  
Rf Mems ◽  
Electrostatic Force ◽  
Circuit Board ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Significant Performance ◽  
And Performance ◽  
Lower Temperature

RF MEMS switches offer significant performance advantages in high frequency RF applications. The switches are actuated by electrostatic force when voltage was applied to the electrodes. Such devices provide high isolation when open and low contact resistance when closed. However, during the packaging process, there are various possible failure modes that may affect the switch yield and performance. The RF MEMS switches were first placed in a package and went through lid seal at 320°C. The assembled packages were then attached to a printed circuit board at 220°C. During the process, some switches failed due to electrical shorting. More interestingly, more failures were observed at the lower temperature of 220°C rather than 320°C. The failure mode was associated with the shorting bar and the cantilever design. Finite element simulations and simplified analytical solutions were used to understand the mechanics driving the behaviors. Simulation results have shown excellent agreement with experimental observations and measurements. Various solutions in package configurations were explored to overcome the hurdles in MEMS packaging and achieve better yield and performance.

Experimental Investigation of Dynamic Response of RF-MEMS Switches

2004 ◽  
Author(s):  
O. Burak Ozdoganlar ◽  
David S. Epp ◽  
Christopher W. Dyck
Keyword(s):  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Electrical Contacts ◽  
Mode Shapes ◽  
Main Function ◽  
Capacitive Switches ◽  
Mems Switches ◽  
Damping Characteristics ◽  
Rf Mems Switches ◽  
Opening And Closing

Ohmic and capacitive switches constitute an important segment of radio frequency microelectromechanical systems (RF-MEMS) components. The main function of these switches is to provide very rapid opening and closing of electrical contacts. To fulfill this requirement, the structural dynamics and coupled-physics response of candidate switch designs must be thoroughly understood. This paper presents a set of dynamic experimentation of two RF-MEMS ohmic switches with different geometries to determine their natural frequencies, mode shapes, and damping characteristics at pressures spanning from vacuum to atmospheric. The experimental facility used for the tests is also described in detail.

Micro/Nanotribology of RF MEMS Switches

2004 ◽  
Author(s):  
Steven T. Patton ◽  
Kalathil C. Eapen ◽  
Jeffrey S. Zabinski
Keyword(s):  
Electric Current ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Cost ◽  
Operating Conditions ◽  
Great Promise ◽  
Rf Switches ◽  
Mems Switches ◽  
Adhesion Contact ◽  
Rf Mems Switches

Microelectromechanical systems (MEMS) radio frequency (RF) switches hold great promise in a myriad of commercial, aerospace, and military applications. MEMS switches offer important advantages over current electromechanical and solid state technologies including high linearity, low insertion loss, low power consumption, good isolation, and low cost [1–21]. However, there is little fundamental understanding of the factors determining the performance and reliability of these devices. Our previous work investigated fundamentals of hot-switched direct current (DC) gold (Au) contacts using a modified microadhesion apparatus as a switch simulator [1]. Those experiments were conducted under precisely controlled operating conditions in air at MEMS-scale forces with an emphasis on the role of surface forces and electric current on switch performance, reliability, and durability [1]. Electric current had a profound effect on deformation mechanisms, adhesion, contact resistance (R), and reliability/durability. At low current (1–10 μA), asperity creep and switching induced adhesion were the most important observations, whereas, at high current (1–10 mA), lack of adhesion and switch shorting by nanowire formation were prominent [1].

Quantification of Uncertainty in Creep Failure in RF-MEMS Switches

2012 ◽  
Author(s):  
Peter A. Kolis ◽  
Marisol Koslowski ◽  
Anil K. Bajaj
Keyword(s):  
Rf Mems ◽  
Beam Model ◽  
Creep Failure ◽  
Micro Electro Mechanical Systems ◽  
Modal Expansion ◽  
Mems Switches ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Rf Mems Switches

We present simulations of the dynamic response of radio frequency micro-electro-mechanical-systems (RF-MEMS) switches undergoing creep deformation. The model includes a microscale-informed Coble creep formulation incorporated in a beam model of an electrostatically actuated RF-MEMS switch, and it is solved using a Ritz-Galerkin based modal expansion. The resulting effects on the long-term device behavior as well as the implications of uncertainty in the device geometry and material parameters are studied. We find that the addition of creep to the beam model results in an undesired degradation of the device performance, as evidenced by decreases in the closing and release voltages.

A 1.2–1.6-GHz Substrate-Integrated-Waveguide RF MEMS Tunable Filter

2011 ◽  
Vol 59 (4) ◽  
pp. 866-876 ◽  
Author(s):  
Vikram Sekar ◽  
Marcelino Armendariz ◽  
Kamran Entesari
Keyword(s):  
Insertion Loss ◽  
Tuning Range ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Tunable Filter ◽  
Circuit Board ◽  
Substrate Integrated Waveguide ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Better Than

This paper presents a high-performance substrate-integrated-waveguide RF microelectromechanical systems (MEMS) tunable filter for 1.2-1.6-GHz frequency range. The proposed filter is developed using packaged RF MEMS switches and utilizes a two-layer structure that effectively isolates the cavity filter from the RF MEMS switch circuitry. The two-pole filter implemented on RT/Duroid 6010LM exhibits an insertion loss of 2.2-4.1 dB and a return loss better than 15 dB for all tuning states. The relative bandwidth of the filter is 3.7 ± 0.5% over the tuning range. The measuredQuof the filter is 93-132 over the tuning range, which is the best reportedQin filters using off-the-shelf RF MEMS switches on conventional printed circuit board substrates. In addition, an upper stopband rejection better than 28 dB is obtained up to 4.0 GHz by employing low-pass filters at the bandpass filter terminals at the cost of 0.7-1.0-dB increase in the insertion loss.

Flexible Circuit-Based RF MEMS Switches

2001 ◽  
Author(s):  
Chunjun Wang ◽  
Ramesh Ramadoss ◽  
Simone Lee ◽  
K. C. Gupta ◽  
Victor M. Bright ◽  
...  
Keyword(s):  
Printed Circuit Board ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Cost ◽  
Polyimide Film ◽  
Circuit Board ◽  
Large Area ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches

Abstract This paper describes a new microelectromechanical systems (MEMS) switch fabricated using flexible circuit technologies. Hundreds of such switches can be laminated onto a large-area printed circuit board (PCB) with other RF devices and circuits. The switches are fabricated using low-cost, low-loss flexible circuit material Kapton-E polyimide film. Switches with actuation voltages as low as 73 V are reported.

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