scholarly journals Aqueous Synthesis of Ru Doped Hematite Nanostructures: A Morphological, Structural, Optical, and Magnetic Study

2015 ◽  
Vol 2015 ◽  
pp. 1-7
Author(s):  
Ceboliyozakha Leonard Ndlangamandla ◽  
Krish Bharuth-Ram ◽  
Osman Muzi Ndwandwe ◽  
Balla Diop Ngom ◽  
Malik Maaza
Keyword(s):  
Band Gap ◽  
Tin Oxide ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Aqueous Synthesis ◽  
Glass Substrates ◽  
External Bias ◽  
Aqueous Chemical Growth ◽  
Ru Doping ◽  
Fto Glass

Hematite nanorods doped with ruthenium were successfully deposited on fluorine doped tin oxide (FTO) glass substrates using aqueous chemical growth. Using complementary surface/interface investigation techniques, the Ru incorporation in the Ru-α-Fe2O3 nanorods was evidenced. The optical band gap was found to be Ru doping concentration dependent: varying from 2.32 (2) to 2.47 (2) eV. These band gap values are well suited for the targeted water splitting process without application of an external bias.

Effect of Zn doping concentration on optical band gap of PbS thin films

2019 ◽  
Vol 792 ◽  
pp. 1000-1007 ◽  
Author(s):  
Mengting Liu ◽  
Qiuqiang Zhan ◽  
Wei Li ◽  
Rui Li ◽  
Qinyu He ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Zn Doping

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

Synthesis and deposition of hematite nanoparticles on Fluorine-doped Tin Oxide (FTO) glass substrates

2018 ◽  
Vol 5 (7) ◽  
pp. 15828-15835 ◽  
Author(s):  
Z. Khakpour ◽  
H. Pourfarahani ◽  
A. Maghsoudipour ◽  
T. Ebadzadeh
Keyword(s):  
Tin Oxide ◽  
Hematite Nanoparticles ◽  
Glass Substrates ◽  
Fto Glass

scholarly journals Studies on the Optical Properties and Surface Morphology of Nickel Phthalocyanine Thin Films

2007 ◽  
Vol 4 (2) ◽  
pp. 255-264 ◽  
Author(s):  
Benny Joseph ◽  
C. S. Menon
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Band Gap ◽  
Electron Micrographs ◽  
Optical Band Gap ◽  
Scanning Electron Micrographs ◽  
Nickel Phthalocyanine ◽  
Glass Substrates ◽  
Substrate Temperatures ◽  
Scanning Electron

Thin films of Nickel Phthalocyanine (NiPc) are fabricated at a base pressure of 10-5m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. Present studies reveal that the optical band gap energies of NiPc thin films are highly dependent on the substrate temperatures. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM), show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM) intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are fiber like at high substrate temperatures. The optical band gap increases with increase in substrate temperature and is then reduced with fiber-like grains at 408K. The band gap increases again at 458K with full of fiber like grains. Trap energy levels are also observed for these films.

scholarly journals Optical Properties of Undoped and Indium-doped Tin Oxide Thin Films

2011 ◽  
Vol 35 (1) ◽  
pp. 99-111 ◽  
Author(s):  
Fatema Rezwana Chowdhury ◽  
Shamima Choudhury ◽  
Firoz Hasan ◽  
Tahmina Begum
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Tin Oxide ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
Visible Range ◽  
Absorption Region ◽  
Gap Energy ◽  
Glass Substrates ◽  
In Doping

Thin films of Tin Oxide (SnO2), having thickness of 200 nm, were formed on to glass substrates by thermal evaporation of high-purity SnO2 powder in vacuum at various substrate temperatures (TS), ranging between 25 and 200°C. SnO2 films with varying thickness were also prepared for a fixed TS = 100°C. Further, doping of SnO2 films with Indium (In) was accomplished through solid state diffusion process by successive deposition of SnO2 and In films and subsequent annealing at 200°C for 10 minutes. Both undoped and doped films were characterized optically by UV-VIS-NIR spectrophotometry in the photon wavelength ranging from 300 to 2500 nm. In the visible photon wavelength range, the average optical transmittance (T%) of the films with varying TS was found to be 85%. The maximum value of T % was found to be 89 % around the wavelength of 700nm. The variation of absorption coefficient with photon energy in the fundamental absorption region is the steepest for TS = 100°C. The sub-band gap (SBG) absorption is also minimum for this Ts. A fluctuating behavior of the band gap energy (Eg) with Ts is observed attaining the highest value of 3.59 eV for Ts = 100°C. The band gap energy increases with thickness but T% in the visible range decreases. The T% in the visible range varies inversely with indium doping, being highest for undoped films. The Eg increases upto 2 wt% In doping and gradually decreases for enhanced doping. It seems reasonable to conclude that In doping does not bring favorable optical characteristics. Undoped SnO2 films having thickness of 200 nm and formed at substrate temperature of 100°C yield essential acceptable properties for photovoltaic applications.DOI: http://dx.doi.org/10.3329/jbas.v35i1.7975Journal of Bangladesh Academy of Sciences, Vol.35, No.1, 99-111, 2011

Absorber Films of Antimony Chalcogenides via Chemical Deposition for Photovoltaic Application

2004 ◽  
Vol 836 ◽  
Author(s):  
M. T. S. Nair ◽  
Y. Rodríguez-Lazcano ◽  
Y. Peña ◽  
S. Messina ◽  
J. Campos ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Chemical Deposition ◽  
Dark Conductivity ◽  
Glass Substrates ◽  
Photovoltaic Application ◽  
Sodium Selenosulfate ◽  
P Type ◽  
Antimony Chalcogenides

ABSTRACTAntimony sulfide thin films (300 nm) have been deposited on glass substrates at 1–10°C from chemical bath. When heated these become crystalline and photoconductive with optical band gap (direct) of 1.7 eV. Thin films formed from chemical baths containing SbCl3 and sodium selenosulfate are of mixed phase Sb2O3/Sb2Se3, which when heated in the presence of Se-vapor converts to single phase Sb2Se3 film with optical band gap of 1.1 eV. Such films possess dark conductivity of 10-8 ohm-1cm-1 and show photosensitivity of two orders. Reaction of Sb2S3-CuS in nitrogen at 400°C produces crystalline, photoconductive p-type CuSbS2 with optical band gap (direct) of 1.5 eV. By controlling the deposition and heating condition, (i)Sb2S3-(p)CuSbS2 layer is formed, which is utilized in a photovoltaic structure, (n)CdS:In-(i)Sb2S3-(p)CuSbS2, with a Voc of 345 mV and Jsc 0.18 mA/cm2 under 1 kW m-2 tungsten halogen illumination. In the case of a structure, CdS:Cl-Sb2S3-Cu2-xSe, Voc of 350 mV and Jsc of 0.5 mA/cm2 are observed.

Electrophoretic deposition of CdSe@CdZnS–ZnS multi core–shell QDs for quantum efficiency control of InGaN/GaN MQW LEDs

RSC Advances ◽  
2016 ◽  
Vol 6 (97) ◽  
pp. 95032-95037 ◽  
Author(s):  
Sudarsan Raj ◽  
Rizwan Khan ◽  
In-Hwan Lee ◽  
Kwang-Un Jeong ◽  
Yeon-Tae Yu
Keyword(s):  
Quantum Dots ◽  
Quantum Efficiency ◽  
Electrophoretic Deposition ◽  
Tin Oxide ◽  
Core Shell ◽  
Glass Substrates ◽  
Efficiency Control ◽  
Fto Glass

CdSe@CdZnS–ZnS multi core–shell quantum dots (MCSQDs) were deposited on fluorine doped tin oxide (FTO) glass substrates as well as on InGaN/GaN MQW LEDs by electrophoretic deposition (EPD).

Structure and Optical Properties of Quantum Confined Pure and Cu Doped SnO2

2020 ◽  
Vol 1159 ◽  
pp. 60-66
Author(s):  
J.R. Sheeba ◽  
Sathasivam Radhika ◽  
C.M. Padma
Keyword(s):  
Band Gap ◽  
Tin Oxide ◽  
Optical Band Gap ◽  
Green Emission ◽  
Precipitation Method ◽  
Rutile Structure ◽  
Tetragonal Rutile Structure ◽  
Ft Ir ◽  
Tin Oxide Nanoparticles ◽  
Co Precipitation

Pure and copper doped tin oxide nanoparticles were synthesized by co-precipitation method and are characterized by XRD, SEM, EDAX, UV-Visible, photoluminescence, and FT-IR analysis techniques. Tetragonal rutile structure is confirmed from XRD and the crystallite size is found to be between 3.8nm and 4.8nm. The optical band gap is observed from UV-Vis spectrum and is found to be 3.99eV and 3.93eV for tin oxide and copper doped tin oxide respectively. The optical band gap of pure and Copper doped tin oxide were blue shifted due to quantum confinement. Photoluminescence spectrum shows UV, blue and green emission peaks.

Properties of TiO2 Thin Film Prepared by Sol-Gel Dip Coating

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Gel Method ◽  
Glass Substrates

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.

Pulsed voltage deposited hierarchical dendritic PbS film as a highly efficient and stable counter electrode for quantum-dot-sensitized solar cells

2018 ◽  
Vol 6 (25) ◽  
pp. 6823-6831 ◽  
Author(s):  
Bin Bin Jin ◽  
Guo Qing Zhang ◽  
Shu Ying Kong ◽  
Xin Quan ◽  
Hui Sheng Huang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Tin Oxide ◽  
Counter Electrode ◽  
Counter Electrodes ◽  
Glass Substrates ◽  
One Step ◽  
Sensitized Solar Cells ◽  
Fto Glass ◽  
Pulsed Voltage

Hierarchical dendritic PbS films were deposited on fluorine doped tin oxide (FTO) glass substrates as counter electrodes (CE) for quantum dot-sensitized solar cells (QDSSCs) by a facile one-step pulse voltage electrodeposition method.

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