Electrophoretic deposition of CdSe@CdZnS–ZnS multi core–shell QDs for quantum efficiency control of InGaN/GaN MQW LEDs

RSC Advances ◽  
2016 ◽  
Vol 6 (97) ◽  
pp. 95032-95037 ◽  
Author(s):  
Sudarsan Raj ◽  
Rizwan Khan ◽  
In-Hwan Lee ◽  
Kwang-Un Jeong ◽  
Yeon-Tae Yu
Keyword(s):  
Quantum Dots ◽  
Quantum Efficiency ◽  
Electrophoretic Deposition ◽  
Tin Oxide ◽  
Core Shell ◽  
Glass Substrates ◽  
Efficiency Control ◽  
Fto Glass

CdSe@CdZnS–ZnS multi core–shell quantum dots (MCSQDs) were deposited on fluorine doped tin oxide (FTO) glass substrates as well as on InGaN/GaN MQW LEDs by electrophoretic deposition (EPD).

Synthesis and deposition of hematite nanoparticles on Fluorine-doped Tin Oxide (FTO) glass substrates

2018 ◽  
Vol 5 (7) ◽  
pp. 15828-15835 ◽  
Author(s):  
Z. Khakpour ◽  
H. Pourfarahani ◽  
A. Maghsoudipour ◽  
T. Ebadzadeh
Keyword(s):  
Tin Oxide ◽  
Hematite Nanoparticles ◽  
Glass Substrates ◽  
Fto Glass

scholarly journals Aqueous Synthesis of Ru Doped Hematite Nanostructures: A Morphological, Structural, Optical, and Magnetic Study

2015 ◽  
Vol 2015 ◽  
pp. 1-7
Author(s):  
Ceboliyozakha Leonard Ndlangamandla ◽  
Krish Bharuth-Ram ◽  
Osman Muzi Ndwandwe ◽  
Balla Diop Ngom ◽  
Malik Maaza
Keyword(s):  
Band Gap ◽  
Tin Oxide ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Aqueous Synthesis ◽  
Glass Substrates ◽  
External Bias ◽  
Aqueous Chemical Growth ◽  
Ru Doping ◽  
Fto Glass

Hematite nanorods doped with ruthenium were successfully deposited on fluorine doped tin oxide (FTO) glass substrates using aqueous chemical growth. Using complementary surface/interface investigation techniques, the Ru incorporation in the Ru-α-Fe2O3 nanorods was evidenced. The optical band gap was found to be Ru doping concentration dependent: varying from 2.32 (2) to 2.47 (2) eV. These band gap values are well suited for the targeted water splitting process without application of an external bias.

scholarly journals Enhancing photo-reduction quantum efficiency using quasi-type II core/shell quantum dots

2016 ◽  
Vol 7 (7) ◽  
pp. 4125-4133 ◽  
Author(s):  
Yanyan Jia ◽  
Jinquan Chen ◽  
Kaifeng Wu ◽  
Alex Kaledin ◽  
Djamaladdin G. Musaev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Yield ◽  
Quantum Efficiency ◽  
Shell Thickness ◽  
Removal Rate ◽  
Core Shell ◽  
Type Ii ◽  
Fast Increase

Enhancing photoreduction quantum yield in core/shell QDs through an unexpectedly fast increase of hole removal rate with shell thickness.

Pulsed voltage deposited hierarchical dendritic PbS film as a highly efficient and stable counter electrode for quantum-dot-sensitized solar cells

2018 ◽  
Vol 6 (25) ◽  
pp. 6823-6831 ◽  
Author(s):  
Bin Bin Jin ◽  
Guo Qing Zhang ◽  
Shu Ying Kong ◽  
Xin Quan ◽  
Hui Sheng Huang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Tin Oxide ◽  
Counter Electrode ◽  
Counter Electrodes ◽  
Glass Substrates ◽  
One Step ◽  
Sensitized Solar Cells ◽  
Fto Glass ◽  
Pulsed Voltage

Hierarchical dendritic PbS films were deposited on fluorine doped tin oxide (FTO) glass substrates as counter electrodes (CE) for quantum dot-sensitized solar cells (QDSSCs) by a facile one-step pulse voltage electrodeposition method.

Quantum efficiency control of InGaN/GaN multi-quantum-well structures using Ag/SiO2 core-shell nanoparticles

2011 ◽  
Vol 99 (25) ◽  
pp. 251114 ◽  
Author(s):  
Lee-Woon Jang ◽  
Trilochan Sahoo ◽  
Dae-Woo Jeon ◽  
Myoung Kim ◽  
Ju-Won Jeon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Core Shell ◽  
Shell Nanoparticles ◽  
Quantum Well Structures ◽  
Efficiency Control ◽  
Core Shell Nanoparticles ◽  
Multi Quantum Well

scholarly journals External Quantum Efficiency Improvement with Luminescent Downshifting Layers: Experimental and Modelling

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
H. Ahmed ◽  
S. J. McCormack ◽  
J. Doran
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Optical Model ◽  
Crystalline Silicon ◽  
Organic Dye ◽  
Core Shell ◽  
Efficiency Improvement ◽  
Silicon Cell

Core-shell quantum dots CdSe/ZnS and lumogen yellow organic dye are characterized by their inclusion in luminescent downshifting (LDS) layers. Layers were deposited on top of crystalline silicon cell (c-Si), dye synthesized solar cell (DSSC), and cadmium telluride (CdTe) minimodules. External quantum efficiency measurements for the solar cell/LDS devices are discussed. Experimental results were compared with an optical model developed by Rothemund, 2014.

scholarly journals Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2299
Author(s):  
Jun Deng ◽  
Zhibiao Hao ◽  
Lai Wang ◽  
Jiadong Yu ◽  
Jian Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Efficiency ◽  
Shell Structure ◽  
Internal Quantum Efficiency ◽  
Systematic Research ◽  
Core Shell ◽  
Band Bending ◽  
Recombination Mechanism ◽  
Carrier Recombination ◽  
Core Shell Structure

GaN quantum dots embedded in nanowires have attracted much attention due to their superior optical properties. However, due to the large surface-to-volume ratio of the nanowire, the impacts of surface states are the primary issue responsible for the degradation of internal quantum efficiency (IQE) in heterostructured dot-in-nanowires. In this paper, we investigate the carrier recombination mechanism of GaN/AlN dot-in-nanowires with an in situ grown AlN shell structure. Ultraviolet photoelectron spectroscopy (UPS) measurements were performed to describe the band bending effect on samples with different shell thicknesses. Temperature-dependent photoluminescence (TDPL) data support that increasing the AlN shell thickness is an efficient way to improve internal quantum efficiency. Detailed carrier dynamics was analyzed and combined with time-resolved photoluminescence (TRPL). The experimental data are consistent with our physical model that the AlN shell can effectively flatten the band bending near the surface and isolate the surface non-radiative recombination center. Our systematic research on GaN/AlN quantum dots in nanowires with a core–shell structure may significantly advance the development of a broad range of nanowire-based optoelectronic devices.

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