scholarly journals Investigating the Effect of Thermal Annealing Process on the Photovoltaic Performance of the Graphene-Silicon Solar Cell

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Lifei Yang ◽  
Xiaolei Wu ◽  
Xin Shen ◽  
Xuegong Yu ◽  
Deren Yang

Graphene-silicon (Gr-Si) Schottky solar cell has attracted much attention recently as promising candidate for low-cost photovoltaic application. For the fabrication of Gr-Si solar cell, the Gr film is usually transferred onto the Si substrate by wet transfer process. However, the impurities induced by this process at the graphene/silicon (Gr/Si) interface, such as H2O and O2, degrade the photovoltaic performance of the Gr-Si solar cell. We found that the thermal annealing process can effectively improve the photovoltaic performance of the Gr-Si solar cell by removing these impurities at the Gr/Si interface. More interestingly, the photovoltaic performance of the Gr-Si solar cell can be improved, furthermore, when exposed to air environment after the thermal annealing process. Through investigating the characteristics of the Gr-Si solar cell and the properties of the Gr film (carrier density and sheet resistance), we point out that this phenomenon is caused by the natural doping effect of the Gr film.

2014 ◽  
Vol 879 ◽  
pp. 144-148
Author(s):  
Nurul Huda Yusoff ◽  
Nur Izzah Abd Azes ◽  
Surani Buniran

This paper reports effect of modification thin film surface morphology using thermal annealing process in order to enhance organic photovoltaic solar cell performance. The organic photovoltaic solar cell (OPV) were fabricated using bulk heterojunction structure, consist of p-type semiconductor of polythiophene (PT) derivative and an n-type of fullerene, C-61 derivative. The devices structure can be named as Al/LiF/polymer composite film/PEDOT-PSS/ITO. For comparison, the devices were varies; as cast and annealed at 125°C for half an hour to modify the thin film surface structure. The performances of the devices were studied by observing the current-voltage characteristics of the device in dark at ambient temperature and under standard A.M 1.5 illumination. The light conversion efficiency of the resulting photovoltaic devices increases from 0.04% (as cast) to 2.3% after thermal annealing process. As a result, the annealed organic photovoltaic devices, show enhanced efficiencies compared with as cast device due to the enhancement in transport properties of polymer base photovoltaic device.


RSC Advances ◽  
2015 ◽  
Vol 5 (49) ◽  
pp. 39630-39634 ◽  
Author(s):  
Hang He ◽  
Xuegong Yu ◽  
Yichao Wu ◽  
Haiyan Zhu ◽  
Xinhui Mu ◽  
...  

An efficiency of 3.36% has been achieved for the graphene/silicon solar cell based on low-cost reduced graphene oxide film.


2013 ◽  
Vol 457-458 ◽  
pp. 1467-1473
Author(s):  
Peng Lei ◽  
Jun Yuan Lai ◽  
Jiong Ma ◽  
Peng Jin

We presented a family of new 3D concentrators. Simulations showed they could significantly increase the illumination on objective plane compared with 2D trough concentrators. A 3D concentrator prototype with a nominal 35° half acceptance angle was made. Its performance was tested under an indoor solar simulator and by on-site experiment. Under solar simulator, a low cost poly-silicon solar cell coupled with a 3D concentrator achieved a 2.25 times of maximum output power compared with a similar bare solar cell. In the on-site experiment, poly-silicon solar cell with a 3D compound parabolic based reflective concentrator gained an average of 1.4 times maximum output power when the incidence sunlight within the critical angle.


Author(s):  
Xiangnan Sun ◽  
Xitao Li ◽  
Haotong Li ◽  
Yao Li ◽  
Siqi Li ◽  
...  

The defects including halide vacancy and uncoordinated Pb in perovskite films caused by the cracking Pb-I bonds in thermal annealing process are responsible for degradation of the photovoltaic performance and...


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Hsi-Chien Liu ◽  
Gou-Jen Wang

The object of this paper is to develop a high antireflection silicon solar cell. A novel two-stage metal-assisted etching (MAE) method is proposed for the fabrication of an antireflective layer of a micronanohybrid structure array. The processing time for the etching on an N-type high-resistance (NH) silicon wafer can be controlled to around 5 min. The resulting micronanohybrid structure array can achieve an average reflectivity of 1.21% for a light spectrum of 200–1000 nm. A P-N junction on the fabricated micronanohybrid structure array is formed using a low-cost liquid diffusion source. A high antireflection silicon solar cell with an average efficiency of 13.1% can be achieved. Compared with a conventional pyramid structure solar cell, the shorted circuit current of the proposed solar cell is increased by 73%. The major advantage of the two-stage MAE process is that a high antireflective silicon substrate can be fabricated cost-effectively in a relatively short time. The proposed method is feasible for the mass production of low-cost solar cells.


2020 ◽  
Vol 2 (11) ◽  
Author(s):  
Soma Ray ◽  
Anup Mondal ◽  
Utpal Gangopadhyay
Keyword(s):  
Low Cost ◽  
Sol Gel ◽  

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