A Facile and Broadly Applicable CdBr2-Passivating Strategy for Halide Migration-Inhibiting Perovskite Films and High-Performance Solar Cells

2021 ◽  
Author(s):  
Xiangnan Sun ◽  
Xitao Li ◽  
Haotong Li ◽  
Yao Li ◽  
Siqi Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
High Performance ◽  
Photovoltaic Performance ◽  
Annealing Process ◽  
Thermal Annealing Process

The defects including halide vacancy and uncoordinated Pb in perovskite films caused by the cracking Pb-I bonds in thermal annealing process are responsible for degradation of the photovoltaic performance and...

The modified multi-step thermal annealing process for highly efficient MAPbI3-based perovskite solar cells

Solar Energy ◽  
2018 ◽  
Vol 174 ◽  
pp. 218-224 ◽  
Author(s):  
Yaxiao Jiang ◽  
Lin Pan ◽  
Dong Wei ◽  
Wenbiao Li ◽  
Shaohua Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Perovskite Solar Cells ◽  
Annealing Process ◽  
Highly Efficient ◽  
Thermal Annealing Process

scholarly journals Investigating the Effect of Thermal Annealing Process on the Photovoltaic Performance of the Graphene-Silicon Solar Cell

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Lifei Yang ◽  
Xiaolei Wu ◽  
Xin Shen ◽  
Xuegong Yu ◽  
Deren Yang
Keyword(s):  
Solar Cell ◽  
Thermal Annealing ◽  
Silicon Solar Cell ◽  
Low Cost ◽  
Photovoltaic Performance ◽  
Annealing Process ◽  
Promising Candidate ◽  
Photovoltaic Application ◽  
Si Solar Cell ◽  
Thermal Annealing Process

Graphene-silicon (Gr-Si) Schottky solar cell has attracted much attention recently as promising candidate for low-cost photovoltaic application. For the fabrication of Gr-Si solar cell, the Gr film is usually transferred onto the Si substrate by wet transfer process. However, the impurities induced by this process at the graphene/silicon (Gr/Si) interface, such as H2O and O2, degrade the photovoltaic performance of the Gr-Si solar cell. We found that the thermal annealing process can effectively improve the photovoltaic performance of the Gr-Si solar cell by removing these impurities at the Gr/Si interface. More interestingly, the photovoltaic performance of the Gr-Si solar cell can be improved, furthermore, when exposed to air environment after the thermal annealing process. Through investigating the characteristics of the Gr-Si solar cell and the properties of the Gr film (carrier density and sheet resistance), we point out that this phenomenon is caused by the natural doping effect of the Gr film.

Enhanced stability in perovskite solar cells via non-annealing process

2021 ◽  
Author(s):  
Boxin Wang ◽  
Shiqing Bi ◽  
Jiyu Zhou ◽  
Nafees Ahmad ◽  
Dongyang Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Development ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Annealing Process ◽  
Enhanced Stability

Perovskite solar cells (PSC) have received rapid development in recent years due to their excellent photovoltaic performance. To reach the desirable crystallization in perovskites, thermal annealing is widely adopted which...

Improving the performance of lead acetate-based perovskite solar cells via solvent vapor annealing

CrystEngComm ◽  
2019 ◽  
Vol 21 (32) ◽  
pp. 4753-4762 ◽  
Author(s):  
Zhongli Guo ◽  
Jia Zhuang ◽  
Zhu Ma ◽  
Haoran Xia ◽  
Jing Yi ◽  
...  
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Lead Acetate ◽  
Perovskite Solar Cells ◽  
Annealing Process ◽  
Solvent Vapor ◽  
Vapor Annealing ◽  
Thermal Annealing Process ◽  
Solvent Vapor Annealing

The perovskite layers with large grain size and less pinhole were achieved by adding DMF during the thermal annealing process.

scholarly journals Tuning the hierarchical pore structure of graphene oxide through dual thermal activation for high-performance supercapacitor

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jeongpil Kim ◽  
Jeong-Hyun Eum ◽  
Junhyeok Kang ◽  
Ohchan Kwon ◽  
Hansung Kim ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Pore Structure ◽  
Specific Capacitance ◽  
Surface Area ◽  
Thermal Annealing ◽  
High Performance ◽  
Annealing Process ◽  
Supercapacitor Electrode ◽  
Simple Method ◽  
Surface Areas

AbstractHerein, we introduce a simple method to prepare hierarchical graphene with a tunable pore structure by activating graphene oxide (GO) with a two-step thermal annealing process. First, GO was treated at 600 °C by rapid thermal annealing in air, followed by subsequent thermal annealing in N2. The prepared graphene powder comprised abundant slit nanopores and micropores, showing a large specific surface area of 653.2 m2/g with a microporous surface area of 367.2 m2/g under optimized conditions. The pore structure was easily tunable by controlling the oxidation degree of GO and by the second annealing process. When the graphene powder was used as the supercapacitor electrode, a specific capacitance of 372.1 F/g was achieved at 0.5 A/g in 1 M H2SO4 electrolyte, which is a significantly enhanced value compared to that obtained using activated carbon and commercial reduced GO. The performance of the supercapacitor was highly stable, showing 103.8% retention of specific capacitance after 10,000 cycles at 10 A/g. The influence of pore structure on the supercapacitor performance was systematically investigated by varying the ratio of micro- and external surface areas of graphene.

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