scholarly journals Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Min Zhong ◽  
Shou Mian Chen ◽  
David Wei Zhang

Embedded SiGe (eSiGe) source/drain (S/D) was studied to enhance PMOS performance. Detailed investigations concerning the effect of GeH4and B2H6gas flow rate on the resultant Boron-doping of the SiGe layer (on a 40 nm patterned wafer) were carried out. Various SiGeB epitaxial growth experiments were realized under systematically varying experimental conditions. Key structural and chemical characteristics of the SiGeB layers were investigated using Secondary Ion Mass Spectroscopy (SIMS), nanobeam diffraction mode (NBD), and Transmission Electron Microscopy (TEM) itself. Furthermore,Ion/Ioffperformances of 40 nm PMOS transistors are also measured by the Parametric Test Systems for the semiconductor industry. The results indicate that the ratio between GeH4and B2H6gas flow rates influences not only the Ge and Boron content of the SiGeB layer, but also the PMOS channel strain and the morphology of the eSiGe S/D regions which directly affect PMOS performance. In addition, the mechanism of Boron-doping during SiGe layer growth on the pattern wafer is briefly discussed. The results and discussion presented within this paper are expected to contribute to the optimization of eSiGe stressor, aimed for advanced CMOS devices.

1970 ◽  
Vol 10 (01) ◽  
pp. 51-55 ◽  
Author(s):  
Robert A. Albrecht ◽  
Sullivan S. Marsden

Abstract Although foam usually will flow in porous media, under certain controllable conditions it can also be used to block the flow of gas, both in unconsolidated sand packs and in sandstones. After steady gas or foam flow has been established at a certain injection pressure pi, the pressure is decreased until flow pressure pi, the pressure is decreased until flow ceases at a certain blocking pressure pb. When flow is then reestablished at a second, higher pi, blocking can again occur at another pb that will usually be greater than the first pi. The relationship between pi and Pb depends on the type of porous medium and the foamer solution saturation in the porous medium. A process is suggested whereby porous medium. A process is suggested whereby this phenomenon might be used to impede or block leakage in natural gas storage projects. Introduction The practice of storing natural gas in underground porous rocks has developed rapidly, and it now is porous rocks has developed rapidly, and it now is the major way of meeting peak demands in urban areas of the U. S. Many of these storage projects have been plagued with gas leakage problems that have, in some cases, presented safety hazards and resulted in sizeable economic losses. Usually these leaks are due to such natural factors as faults and fractures, or to such engineering factors as poor cement jobs and wells that were improperly abandoned. For the latter, various remedies such as spot cementing have been tried but not always with great success. In recent years several research groups have been studying the flow properties of aqueous foams and their application to various petroleum engineering problems. Most of this work has been done under problems. Most of this work has been done under experimental conditions such that the foam would flow in either tubes or porous media. However, under some extreme or unusual experimental conditions, flow in porous media becomes very difficult or even impossible. This factor also has suggested m us as well as to others that foam can be used as a gas flow impeder or as a sealant for leaks in gas storage reservoirs. In such a process, the natural ability of porous media to process, the natural ability of porous media to generate foam would be utilized by injecting a slug of foamer solution and following this with gas to form the foam in situ. This paper presents preliminary results of a sandy on the blockage of gas flow by foam in porous media. It also describes how this approach might be applied to a field process for sealing leaks in natural gas storage reservoirs. Throughout this report, we use the term "foam" to describe any dispersed gas-liquid system in which the liquid is the continuous phase, and the gas is the discontinuous phase. APPARATUS AND PROCEDURE A schematic drawing of the apparatus is shown in Fig. 1. At least 50 PV of filtered, deaerated foamer solution were forced through the porous medium to achieve liquid saturation greater than 80 percent. Afterwards air at controlled pressures was passed into the porous medium in order to generate foam in situ. Table 1 shows the properties and dimensions of the several porous media that were used. The beach sands were washed, graded and packed into a vibrating lucite tube containing a constant liquid level to avoid Stoke's law segregation over most of the porous medium. JPT P. 51


2008 ◽  
Vol 8 (11) ◽  
pp. 5878-5886 ◽  
Author(s):  
Jun Wang ◽  
Stephen J. Sollenberger ◽  
Ying Yuan ◽  
Timothy J. Yosenick ◽  
James H. Adair

Silica coated CdS tabular nanocomposites were synthesized through precipitation of CdS nanoparticles in octylamine/water bilayer system followed by in situ hydrolysis of tetraethoxylsilicate (TEOS) precursor. Face diameter of the nanoplatelets was in the range of 50∼250 nm with a variable thickness (3 to 25 nm) dictated by octylamine content or R ratio ([water]/[octylamine]). A uniform SiO2 outer shell of about 15 nm was observed regardless of the size of the high aspect ratio CdS nanoplatelets, which appeared to be agglomerated primarily owing to the confined bilayer template. Morphology and microstructure of the CdS/SiO2 tabular nanocomposites were characterized using atomic force microscope (AFM) and high resolution transmission electron microscope (HRTEM). A noticeable enhancement in absorbance for the UV-vis spectra was observed due to the SiO2 coating layer. Growth mechanism of nanocomposite platelets and potential applications associated with this anisotropic nanocomposite are discussed.


1995 ◽  
Vol 398 ◽  
Author(s):  
U. Herr ◽  
M. Poilack ◽  
D.L. Olynick ◽  
J.M. Gibson ◽  
R.S. Averback

ABSTRACTDisordered clusters of the intermetallic compounds Ni3Al and Cu3Au have been produced using a high pressure sputtering technique. The clusters are either embedded in a film or studied, in-situ in an UHV electron microscope. The evolution of the ordered structure upon annealing is studied. Using a scanning transmission electron microscope, electron diffraction is obtained from individual clusters. Partial ordering is observed in Cu3Au clusters which have been annealed below the bulk order-disorder transition temperature. Under the experimental conditions, only clusters with sizes of 10–15 nm or larger show ordering.


2010 ◽  
Vol 25 (9) ◽  
pp. 1859-1869 ◽  
Author(s):  
Isabelle Jouanny ◽  
Valérie Demange ◽  
Jaafar Ghanbaja ◽  
Elisabeth Bauer-Grosse

Fe1–xCx coatings were synthesized by triode magnetron sputtering of an iron target in a methane/argon atmosphere with a large range of composition (x = 0.3 to 0.6 ± 0.06). Film surfaces were characterized by grazing incidence x-ray diffraction, scanning and transmission electron microscopies, and electron energy loss spectroscopy, to study effects of the variation of the methane gas flow rate on their structural properties. The coatings were constituted of the ε-Fe3C carbide (x = 0.3 and 0.36), in which carbon atoms are in octahedral sites, and of nanocomposite structure constituted of disordered and crystalline carbide nanograins embedded in a carbon matrix made of an amorphous and poorly crystallized graphenelike material (x = 0.55 and 0.60). In situ annealing of the nanocomposite Fe0.45C0.55 coating led to the formation of carbides θ-Fe3C and Fe7C3 (with carbon atoms in prismatic sites) and C-rich cubic carbide possibly related to the τ2-Fe2C7 compound.


2021 ◽  
Author(s):  
Carina B. Maliakkal

Growing nanowires inside a transmission electron microscope (TEM) and observing the process in situ has contributed immensely to understanding nanowire growth mechanisms. Majority of such studies were on elemental semiconductors – either Si or Ge – both of which are indirect bandgap semiconductors. Several compound semiconductors on the other hand have a direct bandgap making them more efficient in several applications involving light absorption or emission. During compound nanowire growth using a metal catalyst, the difference in miscibility of the nanowire species inside the metal catalyst are different, making its growth dynamics different from elemental nanowires. Thus, studies specifically focusing on compound nanowires are necessary for understanding its growth dynamics. This chapter reviews the recent progresses in the understanding of compound semiconductor nanowire growth obtained using in situ TEM. The concentrations of the nanowire species in the catalyst was studied in situ. This concentration difference has been shown to enable independent control of layer nucleation and layer growth in nanowires. In situ TEM has also enabled better understanding of the formation of metastable crystal structures in nanowires.


1993 ◽  
Vol 334 ◽  
Author(s):  
N. Dietz ◽  
S. Habermehl ◽  
J. T. Kelliher ◽  
G. Lucovsky ◽  
K. J. Bachmann

AbstractThe low temperature epitaxial growth of Si / GaP / Si heterostructures is investigated with the aim using GaP as a dielectric isolation layer for Si circuits. GaP layers have been deposited on Si(100) surfaces by chemical beam epitaxy (CBE) using tertiarybutyl phosphine (TBP) and triethylgallium (TEG) as source materials. The influence of the cleaning and passivation of the GaP surface has been studied in-situ by AES and LEED, with high quality epitaxial growth proceeding on vicinal GaP(100) substrates. Si / GaP / Si heterostructures have been investigated by cross sectional high resolution transmission electron microscope (HRTEM) and secondary ion mass spectroscope (SIMS). These methods reveal the formation of an amorphous SiC interlayer between the Si substrate and GaP film due to diffusion of carbon generated in the decomposition of the metalorganic precursors at the surface to the GaP/Si interface upon prolonged growth (layer thickness > 300Å). The formation of twins parallel to {111} variants in the GaP epilayer are extended into the subsequently grown Si film with minor generation of new twins.


1992 ◽  
Vol 263 ◽  
Author(s):  
M. C. Tamargo ◽  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
D. E. Aspnes ◽  
B. Philips ◽  
...  

ABSTRACTWe investigate the formation of inAs-rich layers at the interface between InP and arsenicbased Ill-V alloys grown by chemical beam epitaxy (CBE). In-situ spectroscopic ellipsometry, low temperature photoluminescence, secondary ion mass spectrometry and transmission electron microscopy were used to characterize the formation of these layers. We present evidence for interfacial layer roughness that depends strongly on growth temperature and on the presence of surface steps, and show that modifications of the interface chemistry and of the gas-switching sequence can reduce interfacial layer thicknesses.


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