scholarly journals Sb2S3Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode

2015 ◽  
Vol 2015 ◽  
pp. 1-10 ◽  
Author(s):  
You-Da Hsieh ◽  
Ming-Way Lee ◽  
Gou-Jen Wang
Keyword(s):  
Quantum Dot ◽  
Conversion Efficiency ◽  
Silicon Substrate ◽  
Short Circuit ◽  
Nanorod Array ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
Xenon Lamp ◽  
Photoelectric Conversion ◽  
Semiconductor Silicon

We propose a novel quantum-dot sensitized solar cell (QDSSC) structure that employs a quantum dot/semiconductor silicon (QD/Si) coaxial nanorod array to replace the conventional dye/TiO2/TCO photoelectrode. We replaced the backlight input mode with top-side illumination and used a quantum dot to replace dye as the light-absorbing material. Photon-excited photoelectrons can be effectively transported to each silicon nanorod and conveyed to the counter electrode. We use two-stage metal-assisted etching (MAE) to fabricate the micro-nano hybrid structure on a silicon substrate. We then use the chemical bath deposition (CBD) method to synthesize a Sb2S3quantum dot on the surface of each silicon nanorod to form the photoelectrode for the quantum dot/semiconductor silicon coaxial nanorod array. We use a xenon lamp to simulate AM 1.5 G (1000 W/m2) sunlight. Then, we investigate the influence of different silicon nanorod arrays and CBD deposition times on the photoelectric conversion efficiency. When an NH (N-type with high resistance) silicon substrate is used, the QD/Si coaxial nanorod array synthesized by three runs of Sb2S3deposition shows the highest photoelectric conversion efficiency of 0.253%. The corresponding short-circuit current density, open-circuit voltage, and fill factor are 5.19 mA/cm2, 0.24 V, and 20.33%, respectively.

scholarly journals Effect of Core-Shell Ag@TiO2Volume Ratio on Characteristics of TiO2-Based DSSCs

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Ho Chang ◽  
Chih-Hao Chen ◽  
Mu-Jung Kao ◽  
Hsin-Han Hsiao
Keyword(s):  
Conversion Efficiency ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
Core Shell ◽  
Photoelectric Conversion ◽  
Shell Type ◽  
Degussa P25 ◽  
Triton X

This paper aims to develop photoanode material required by dye-sensitized solar cells. The material prepared is in the form of Ag@TiO2core-shell-type nanocomposites. This material is used to replace the titanium oxide powder commonly used in general DSSCs. The prepared Ag@TiO2core-shell-type nanocomposites are mixed with Degussa P25 TiO2in different proportions. Triton X-100 is added and polyethylene glycol (PEG) at 20 wt% is used as a polymer additive. This study tests the particle size and material properties of Ag@TiO2core-shell-type nanocomposites and measures the photoelectric conversion efficiency and IPCE of DSSCs. Experimental results show that the DSSC prepared by Ag@TiO2core-shell-type nanocomposites can achieve a photoelectric conversion efficiency of 3.67%. When Ag@TiO2core-shell-type nanocomposites are mixed with P25 nanoparticles in specific proportions, and when the thickness of the photoelectrode thin film is 28 μm, the photoelectric conversion efficiency can reach 6.06%, with a fill factor of 0.52, open-circuit voltage of 0.64V, and short-circuit density of 18.22 mAcm−2. Compared to the DSSC prepared by P25 TiO2only, the photoelectric conversion efficiency can be raised by 38% under the proposed approach.

scholarly journals Effects of Different Doping Ratio of Cu Doped CdS on QDSCs Performance

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Xiaojun Zhu ◽  
Xiaoping Zou ◽  
Hongquan Zhou
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Sensitized Solar Cells ◽  
Doping Ratio

We use the successive ionic layer adsorption and reaction (SILAR) method for the preparation of quantum dot sensitized solar cells, to improve the performance of solar cells by doping quantum dots. We tested the UV-Vis absorption spectrum of undoped CdS QDSCs and Cu doped CdS QDSCs with different doping ratios. The doping ratios of copper were 1 : 100, 1 : 500, and 1 : 1000, respectively. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density photoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. Refinement of Cu doping ratio are 1 : 10, 1 : 100, 1 : 200, 1 : 500, and 1 : 1000. When the proportion of Cu and CdS is 1 : 10, all the parameters of the QDSCs reach the minimum value, and, with the decrease of the proportion, the short circuit current density, open circuit voltage, and the photoelectric conversion efficiency are all increased. When proportion is 1 : 500, all parameters reach the maximum values. While with further reduction of the doping ratio of Cu, the parameters of QDSCs have a decline tendency. The results showed that, in a certain range, the lower the doping ratio of Cu, the better the performance of quantum dot sensitized solar cell.

scholarly journals Cu-Doped-CdS/In-Doped-CdS Cosensitized Quantum Dot Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Lin Li ◽  
Xiaoping Zou ◽  
Hongquan Zhou ◽  
Gongqing Teng
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Quantum Dot Solar Cells ◽  
Cds Quantum Dot

Cu-doped-CdS and In-doped-CdS cosensitized (Cu-doped-CdS/In-doped-CdS) quantum dot solar cells (QDSCs) are introduced here. Different cosensitized sequences, doping ratios, and the thickness (SILAR cycles) of Cu-doped-CdS and In-doped-CdS are discussed. Compared with undoped CdS QDSCs, the short circuit current density, UV-Vis absorption spectra, IPCE (monochromatic incident photon-to-electron conversion), open circuit voltage, and so on are all improved. The photoelectric conversion efficiency has obviously improved from 0.71% to 1.28%.

Fabrication of ZnO Nanospheres and Application to Dye-Sensitized Solar Cells

2012 ◽  
Vol 512-515 ◽  
pp. 1545-1548
Author(s):  
Yan Xiang Wang ◽  
Bing Xin Zhao ◽  
Jian Sun
Keyword(s):  
Solar Cells ◽  
Reaction Time ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

In this paper, pure ZnO nanospheres and IO3- ions doped ZnO nanospheres were prepared by heating under reflux with zinc acetate and diethylene glycol as raw materials, and the ZnO dye-sensitized solar cells (DSCs) were prepared. The influences of reaction time and IO3--ions dope on ZnO properties were studied. DSCs properties prepared with obtained ZnO nanospheres were investied. ZnO nanospheres were characterized by XRD, SEM and infrared absorption spectrogram. The results showed that when the temperature was 160°C, ZnO nanospheres with diameter 100-800nm were obtained. When reaction time was 2h, ZnO diameter was about 500nm. When the reaction time was 24h, the diameter of ZnO was about 800nm with wider distribution. The ZnO DSCs were prepared by using ZnO nanopowders with different reaction time as photoanode. The photoelectric conversion efficiency of 24h-ZnO DSCs was the highest. The photoelectric conversion efficiency, open circuit voltage, short-circuit current and fill factor were 2.15%, 0.64V, 6.47 mA•cm-2, 0.52, respectively.

Constructing PbS quantum dot sensitized ZnO nanorod array photoelectrodes for highly efficient photovoltaic devices

2016 ◽  
Vol 94 (7) ◽  
pp. 687-692
Author(s):  
Masood Mehrabian ◽  
Naser Ghasemian
Keyword(s):  
Quantum Dot ◽  
Short Circuit ◽  
Zno Nanorods ◽  
Growth Period ◽  
Short Circuit Current ◽  
Nanorod Array ◽  
Open Circuit ◽  
Zno Film ◽  
Photovoltaic Properties ◽  
Pbs Quantum Dot

Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbS QD as photoelectrode showed the open circuit voltage VOC of 0.59 V, short circuit current density JSC of 10.06 mAcm−2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm−2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm−2 and 3.81%, respectively.

Solar Cells of the Inorganic Materials based on PbSe/CdSe Core/Shell Nanocrystals

2015 ◽  
Vol 737 ◽  
pp. 119-122 ◽  
Author(s):  
Tong Yu Wang ◽  
Peng Wang ◽  
He Lin Wang ◽  
Tie Qiang Zhang
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Conversion Efficiency ◽  
Inorganic Materials ◽  
Photoelectric Conversion Efficiency ◽  
Core Shell ◽  
Cdse Core ◽  
Photoelectric Conversion ◽  
Quantum Dot Solar Cells ◽  
The Stability

This essay employed the "successive ion layer adsorption and reaction (SILAR)"technology to form PbSe/CdSe core/shell.We use the Pbse/CdSe core/shell replaced PbSe nanocrystals and obtained one new quantum dot solar cells of the inorganic.This new solar cells constituted by the metal oxide films retain the photoelectric conversion efficiency of quantum dot solar cells.At the same time,the stability of the new solar cells is tremendously improved with the oxidation resistance of inorganic oxide.Finally,when Jsc=25.2mA/cm2and Voc=0.36V ,we can conclude the conversion efficiency of the solar cell can be evaluated as 3.929%.

scholarly journals Synthesis and Characterization of a Photoelectrode with a Novel 3D Structure for Dye-Sensitized Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
Kun-Ching Cho ◽  
Ho Chang ◽  
Tien-Li Chen ◽  
Chung-Yi Wu
Keyword(s):  
Conversion Efficiency ◽  
Counter Electrode ◽  
Electrode Materials ◽  
Cell Structure ◽  
Short Circuit ◽  
Gel Polymer Electrolyte ◽  
3D Structure ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Dye Sensitized

This study designs a novel dye-sensitized solar cell (DSSC) in which the photoanode is derived from its three-dimensional (3D) structure. The inside of the cell has a positive illumination structure, with the purposes of increasing the area of photoelectrode thin film and of increasing the illuminated area within a fixed area in order to achieve the objective of enhancing the photoelectric conversion efficiency of cell. For the cell structure experiment, the study uses graphite paper, carbon and platinum as counter electrode materials, and then conducts measurement with cell heights of 3 mm, 5 mm, and 7 mm. The electrolyte used is a gel polymer electrolyte. The assembly of the cell is divided into vertical assembly, inclined assembly, and tandem assembly. In the 3D tandem cell experiment, the counter electrode material is platinum. Experimental results show that when cell height is 7 mm and illuminated area is 0.28 cm2, open-loop voltage is 0.662 V, short-circuit current density is 18.42 mA/cm2, fill factor is 0.31, and the photoelectric conversion efficiency is 3.85%, which is 1.65 times that under vertical assembly (2.34%) and 2.15 times that of the flat cell (1.79%).

Application of ZnO Nanostructure by Hydrothermal Growth in Quantum Dot Sensitized Solar Cells

2014 ◽  
Vol 875-877 ◽  
pp. 1904-1907
Author(s):  
Bao Li Zhang ◽  
X.P. Zou ◽  
X.M. Lv ◽  
G.Q. Yang ◽  
C.L. Wei ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Short Circuit ◽  
Hydrothermal Growth ◽  
Photoelectric Conversion Efficiency ◽  
Flower Structure ◽  
Photoelectric Conversion ◽  
Nanostructure Materials ◽  
Zno Nanostructure ◽  
Sensitized Solar Cells

In this paper, we mainly talk about two kinds of ZnO nanostructure materials which are rod and flower structure by hydrothermal growth as photoanode of quantum dot sensitized solar cells (QDSSCs). Using chemical bath deposition to assemble CdS quantum dots onto ZnO nanostructure materials, and after different CBD cycles we could get the cell parameters of different CBD cycles respectively in their I-V curves, from which we could see it is the flower structure that has the highest efficiency which is 0.346% after 9 CBD cycles and the short-circuit current is 2.88 mA/cm2. Therefore, we could see that ZnO flower structure has a potential application in solar cell devices as the photoelectrode to gain higher photoelectric conversion efficiency (PCE).

Preparation of ZnO Films with Different Morphologies and their Applications in Dye Sensitized Solar Cells

2012 ◽  
Vol 519 ◽  
pp. 70-73
Author(s):  
Yan Xiang Wang ◽  
Sun Jian ◽  
Bing Xin Zhao
Keyword(s):  
Fill Factor ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Zno Films ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

The influences of ZnO photoanode structure on the properties of ZnO dye-sensitized solar cell were studied in this paper. Four kinds of ZnO photoanode films prepared from ZnO nanopowders, nanorods, nanosheets and aggregates were investigated. Their photovoltaic parameters were discussed and compared. ZnO cell consisted of ZnO aggregates had optimal properties, photoelectric conversion efficiency, open circuit voltage, short-circuit current and the fill factor of ZnO aggregates cells were 2.15%, 0.64V, 6.47mA•cm-2 and 0.52, respectively.

Research of a New Type of Solar Cell Materials

2014 ◽  
Vol 488-489 ◽  
pp. 44-47
Author(s):  
Hao Hua Li ◽  
You Hua Wang ◽  
Dun Yu Zhu
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Monocrystalline Silicon ◽  
Maximum Efficiency ◽  
Photoelectric Conversion Efficiency ◽  
Junction Depth ◽  
Photoelectric Conversion ◽  
Crystal Silicon ◽  
Solar Battery

Solar energy is the inexhaustible,enewable Energy. The solar cell is the solar light energy into electricity. The unique advantages of solar cell. Potential, more than wind, hydro, geothermal energy, nuclear energy and other resources, is expected to become the main pillar of power supply in the future. This paper studies that the main parameters of monocrystalline crystal silicon solar battery: the junction depth and superficial concentrations influence on electrical characteristics of monocrystalline silicon solar battery. The result shows that for maximum efficiency, it is bound to get the largest possible open circuit voltage, short circuit current and fill factor of the product, therefore, it is necessary to control these two parameters, the junction depth and doping parameters. If the junction depth is constant, with the increased superficial doping concentration of monocrystalline silicon solar battery, the photoelectric conversion efficiency of the battery increases slowly at first and then rapidly decreases, and the deeper the junction depth is, the more obvious trend of the photoelectric conversion efficiency is.

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