scholarly journals The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Shih-Hao Chan ◽  
Meng-Chi Li ◽  
Hung-Sen Wei ◽  
Sheng-Hui Chen ◽  
Chien-Cheng Kuo
Keyword(s):  
Sheet Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Transparent Conductive Films ◽  
Sensor Applications ◽  
Conductive Films ◽  
Touch Sensor ◽  
Ito Films

This study aims to discuss the sheet resistance of ultrathin indium tin oxide (ITO) transparent conductive films during the postannealing treatment. The thickness of the ultrathin ITO films is 20 nm. They are prepared on B270 glass substrates at room temperature by a direct-current pulsed magnetron sputtering system. Ultrathin ITO films with high sheet resistance are commonly used for touch panel applications. As the annealing temperature is increased, the structure of the ultrathin ITO film changes from amorphous to polycrystalline. The crystalline of ultrathin ITO films becomes stronger with an increase of annealing temperature, which further leads to the effect of enhanced Hall mobility. A postannealing treatment in an atmosphere can enhance the optical transmittance owing to the filling of oxygen vacancies, but the sheet resistance rises sharply. However, a higher annealing temperature, above 250°C, results in a decrease in the sheet resistance of ultrathin ITO films, because more Sn ions become an effective dopant. An optimum sheet resistance of 336 Ω/sqr was obtained for ultrathin ITO films at 400°C with an average optical transmittance of 86.8% for touch sensor applications.

All solution-processed silver nanowires composite silica nanospheres antireflection structure with synergetic optoelectronic performance

2021 ◽  
Author(s):  
Yuxin Tang ◽  
Wanying Yin ◽  
Yue Huang ◽  
Ganghua Zhang ◽  
Qingbiao Zhao ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Silver Nanowires ◽  
Great Promise ◽  
Silica Nanospheres ◽  
Solution Processed ◽  
Transparent Conductive Films ◽  
Conductive Films

Silver nanowires (AgNWs) network has shown great promise as transparent conductive films (TCFs) due to its excellent optoelectronic performance. In order to replace indium tin oxide (ITO), considerable intricate methods...

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

Ethanolamine-assisted synthesis of size-controlled indium tin oxide nanoinks for low temperature solution deposited transparent conductive films

2015 ◽  
Vol 3 (43) ◽  
pp. 11464-11470 ◽  
Author(s):  
Zheng Chen ◽  
Xichao Qin ◽  
Teng Zhou ◽  
Xinzhou Wu ◽  
Shuangshuang Shao ◽  
...  
Keyword(s):  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Quality ◽  
Transparent Conductive Films ◽  
Low Resistivity ◽  
Conductive Films ◽  
Temperature Solution ◽  
Film Preparation ◽  
Size Controlled

ITO inks are synthesized by the addition of different concentrations of ethanolamine in reactions for low resistivity high quality films, cooperating with a water washing in film preparation.

Deposited indium-tin-oxide (ITO) transparent conductive films by reactive low-voltage ion plating (RLVIP) technique

2007 ◽  
Vol 122-123 ◽  
pp. 908-910 ◽  
Author(s):  
Ying Xu ◽  
Jinsong Gao ◽  
Xuanming Zheng ◽  
Xiaoyi Wang ◽  
Tongtong Wang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Low Voltage ◽  
Transparent Conductive Films ◽  
Ion Plating ◽  
Conductive Films

PREPARATION AND CHARACTERIZATION OF TRANSPARENT CONDUCTIVE Ta-DOPED ITO FILMS BY ELECTRON-BEAM EVAPORATION

2010 ◽  
Vol 24 (32) ◽  
pp. 3089-3095 ◽  
Author(s):  
J. Y. HUANG ◽  
G. H. FAN ◽  
T. MEI ◽  
S. W. ZHENG ◽  
Q. L. NIU ◽  
...  
Keyword(s):  
Electron Beam ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Conductive Films ◽  
Atomic Force ◽  
Average Optical Transmittance ◽  
Ito Films

Tantalum-doped indium tin oxide ( Ta -doped ITO) transparent conductive films are deposited on glass substrates by electron-beam evaporation. The effects of different Ta concentrations and annealing temperatures on the structural, morphologic, electrical, and optical properties of Ta -doped ITO films are investigated by X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic bixbyite structure of indium oxide and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 1.54×10-4 Ω ·cm is obtained from the ITO film containing 0.2 wt% tantalum annealed at 500°C and the average optical transmittance is over 95% from 425 nm to 460 nm.

Room Temperature Growth of Indium Tin Oxide Films By Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Coming glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

Structural, Optical and Morphological Studies on Nanostructure ITO Thin Films

2013 ◽  
Vol 678 ◽  
pp. 140-143
Author(s):  
Rangasamy Balasundraprabhu ◽  
N. Muthukumarasamy ◽  
E.V. Monakhov ◽  
B.G. Svensson
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Fused Silica ◽  
Morphological Studies ◽  
Atomic Force ◽  
Ito Thin Films ◽  
Deposited Films ◽  
Ito Films

Indium tin oxide (ITO) thin films exhibiting good transmittance and conductivity suitable for solar cell applications have been prepared on Si(100) and fused silica substrates by optimizing the dc sputtering parameters such as power density and Ar partial pressure. Structural analysis of the as-deposited and annealed ITO films indicated that the as-deposited films are predominantly amorphous, whereas the films annealed at 200–400 °C are found to be of polycrystalline nature exhibiting dominant peaks corresponding to the (222) and (400) planes. The optical transmittance and band gap values of the films are observed to exhibit a change on annealing. From the ellipsometry studies on ITO/Si annealed at 300°C, it is found that graded layer consist of the mixing of two ITO materials with slightly different optical constants and the grading is almost linear. The resistivity of the ITO films is found to decrease with annealing temperature, correlating with the improvement in the crystal quality, and values in the range of 2-3 x10-4 Ω-cm are observed for the films annealed at 300°C. Surface topography study of the films has been performed using atomic force microscope(AFM) and the results are discussed.

Room Temperature Growth of Indium Tin Oxide Films by Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 623 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Corning glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

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